公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US20210050469A1

公开(公告)日：2021-02-18

申请号：US16812764

申请日：2020-03-09

Applicant: BOE Technology Group Co.,Ltd.

Inventor： Tianmin Zhou ,  Rui Huang ,  Lizhong Wang ,  Jipeng Song ,  Tao Yang ,  Zhaohui Qiang

IPC: H01L31/11 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

公开(公告)号：US11296249B2

公开(公告)日：2022-04-05

申请号：US16812764

申请日：2020-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Tianmin Zhou ,  Rui Huang ,  Lizhong Wang ,  Jipeng Song ,  Tao Yang ,  Zhaohui Qiang

IPC: H01L31/101 ,  H01L31/11 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392

Abstract: A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

公开(公告)号：US11251207B2

公开(公告)日：2022-02-15

申请号：US16846888

申请日：2020-04-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yupeng Gao ,  Guangcai Yuan ,  Feng Guan ,  Zhi Wang ,  Jianhua Du ,  Zhaohui Qiang ,  Chao Li

IPC: H01L27/00 ,  H01L29/00 ,  H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/16 ,  H01L21/84

Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

公开(公告)号：US11996413B2

公开(公告)日：2024-05-28

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui Qiang ,  Li Qiang ,  Chao Luo ,  Huiqin Zhang ,  Rui Huang ,  Zhi Wang

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78696 ,  G02F1/13624 ,  G02F1/1368 ,  H10K59/1213

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

公开(公告)号：US11973094B2

公开(公告)日：2024-04-30

申请号：US17290495

申请日：2020-09-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin Zhou ,  Rui Huang ,  Wei Yang ,  Lizhong Wang ,  Zhaohui Qiang ,  Tao Yang ,  Li Qiang

IPC: H01L27/146 ,  G06V40/13 ,  H10K59/12 ,  H10K59/65 ,  H10K71/00

CPC classification number: H01L27/14616 ,  G06V40/1318 ,  H01L27/14603 ,  H01L27/14692 ,  H10K59/65 ,  H10K71/00 ,  H10K59/12 ,  H10K59/1201

Abstract: The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

公开(公告)号：US11121257B2

公开(公告)日：2021-09-14

申请号：US16641078

申请日：2019-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui Qiang ,  Feng Guan ,  Zhi Wang ,  Yupeng Gao ,  Yang Lyu ,  Chao Li ,  Jianhua Du ,  Lei Chen

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/49

Abstract: The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.

公开(公告)号：US11728352B2

公开(公告)日：2023-08-15

申请号：US17354007

申请日：2021-06-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xinhong Lu ,  Fangzhen Zhang ,  Guangcai Yuan ,  Zhanfeng Cao ,  Jiushi Wang ,  Ke Wang ,  Xiaoyan Zhu ,  Qi Qi ,  Jingshang Zhou ,  Zhaohui Qiang ,  Zhiwei Liang

IPC: H01L27/12 ,  H01L25/16

CPC classification number: H01L27/124 ,  H01L25/167 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1218

Abstract: The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.

公开(公告)号：US11362072B2

公开(公告)日：2022-06-14

申请号：US16904584

申请日：2020-06-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Li Qiang ,  Zhaohui Qiang ,  Tao Yang ,  Dongsheng Yin

IPC: H01L33/00 ,  H01L25/075 ,  H01L25/16

Abstract: A light emitting diode, a display substrate and a transfer method are disclosed. The transfer method includes: disposing a display substrate on an adsorption carrier plate, and absorbing, by a transport head, multiple light emitting diodes from a donor substrate; dropping, by the transport head, the multiple light emitting diodes onto the display substrate, the light emitting diodes falling into positioning holes on the display substrate; and absorbing and removing, by the transport head, a light emitting diode on the display substrate which does not fall into a positioning hole.

公开(公告)号：US11183610B2

公开(公告)日：2021-11-23

申请号：US16909526

申请日：2020-06-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Yupeng Gao ,  Zhaohui Qiang ,  Zhi Wang ,  Yang Lyu ,  Chao Luo

IPC: H01L31/105 ,  H01L27/12 ,  H01L31/12 ,  H01L31/18

Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.