公开(公告)号：US11996413B2

公开(公告)日：2024-05-28

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui Qiang ,  Li Qiang ,  Chao Luo ,  Huiqin Zhang ,  Rui Huang ,  Zhi Wang

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L27/1222 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78696 ,  G02F1/13624 ,  G02F1/1368 ,  H10K59/1213

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.