Abstract:
A display panel includes a method of fabricating an array substrate. The method includes forming a metal layer (1) on a substrate, and patterning the metal layer (1) using a phase shift mask to form a pattern of metal wiring. The phase shift mask includes a substrate and a wiring light shielding portion (02) on the substrate (01). The wiring light shielding portion (02) includes a light shielding region (021) and a phase shift region (022). In a direction perpendicular to the extending direction of the wiring light shielding portion (02) a width of the light shielding region (021) is larger than a width of the pattern of the metal wiring formed by the wiring light shielding portion (02).
Abstract:
Disclosed are a mask, a display substrate and a display device. The mask comprises a substrate, a first exposure structure, a second exposure structure located at one side of the substrate and disposed opposite to each other, the first exposure structure comprises a first light transmission film layer and a first light shielding film layer, an orthographic projection of the first light shielding film layer falls within an orthographic projection of the first light transmission film layer on the substrate; the second exposure structure comprises a second light transmission film layer and a second light shielding film layer, an orthographic projection of the second light shielding film layer falls within an orthographic projection of the second light transmission film layer on the substrate; a side edge of the first exposure structure has a first zigzag structure, and a side edge of the second exposure structure has a second zigzag structure.
Abstract:
An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.
Abstract:
An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved.
Abstract:
An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.
Abstract:
A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.
Abstract:
Provided are an OLED display panel and its manufacturing method, as well as a display device. The OLED display panel includes: a base substrate; and an organic light emitting unit, a pixel defining layer and a packaging substrate, arranged on the base substrate. The pixel defining layer is provided with a via hole at least one side of the organic light emitting unit. The via hole is filled with a total reflection-eliminating layer through which incident light is processed to obtain emergent light capable of arriving at an interface between the packaging substrate and an atmosphere at an incident angle smaller than a total reflection angle at the interface between the packaging substrate and the atmosphere.
Abstract:
The present disclosure provides an OLED display device and its manufacturing method. The OLED display device includes an anode layer, a cathode layer, and a pixel-defined layer and a light-emitting layer both arranged between the anode layer and the cathode layer. The pixel-defined layer is provided with an opening, and the light-emitting layer is arranged in the opening. An insulating layer having a refractive index greater than that of the pixel-defined layer is arranged between the light-emitting layer and the pixel-defined layer.
Abstract:
An organic light emitting device and a display apparatus are disclosed. The organic light emitting device includes an array substrate and a package substrate (2); on a side of the package substrate (2) facing the array substrate, there is provided a protrusion (7) formed of a first transparent material, a surface of the protrusion (7) is also covered with a transparent layer (8) formed of a second transparent material, and the refractive index of the second transparent material is larger than the refractive index of the first transparent material. With the organic light emitting device, a part of light that is emitted from an organic light-emitting layer (5) and irradiated to a surface of the protrusion (7) is totally reflected and changed in optical paths to decrease incident light totally reflected at a boundary between the package substrate (2) and the outside air, and light that has been changed in optical paths is irradiated out through the package substrate (2) more easily, thereby improving the output efficiency of light.
Abstract:
A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the polysilicon layer film being laminated sequentially, and wherein regularly arranged first grooves being provided on a surface of the buffer layer contacting the polysilicon film; the polysilicon film being formed, by applying crystallization treatment, through an optical annealing process, to an amorphous silicon film on the buffer layer having regularly arranged first grooves.