Light emitting diode chip, display device and method for manufacturing the same

    公开(公告)号:US11742377B2

    公开(公告)日:2023-08-29

    申请号:US17488243

    申请日:2021-09-28

    摘要: A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

    Light emitting diode chip and method for manufacturing the same, display device

    公开(公告)号:US12074258B2

    公开(公告)日:2024-08-27

    申请号:US17332852

    申请日:2021-05-27

    摘要: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

    SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220293635A1

    公开(公告)日:2022-09-15

    申请号:US17529969

    申请日:2021-11-18

    IPC分类号: H01L27/12

    摘要: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.