公开(公告)号：US20250023234A1

公开(公告)日：2025-01-16

申请号：US18274743

申请日：2022-07-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yong Ma ,  Hua Huang ,  Xin Gu ,  Zhao Kang ,  Shulei Li ,  Changhan Hsieh ,  Chengtan Zhao ,  Zhao Cui

IPC: H01Q3/36

Abstract: A frame sealing adhesive of the liquid-crystal phase shifter is disposed between two transparent substrates, the frame sealing adhesive encloses a first cavity, a first part of the metal-trace layer is located inside the first cavity, and a second part of the metal-trace layer is located outside the first cavity. The second part is disposed on first surfaces or second surfaces of the two transparent substrates. If the second part is disposed on the first surfaces of the two transparent substrates, metal cushion layers are provided between the frame sealing adhesive and the first surfaces of the two transparent substrates. If the second part is disposed on the second surfaces of the two transparent substrates, the first part and the second part are electrically connected by metal via holes provided in the transparent substrates, and the frame sealing adhesive contacts the first surfaces of the two transparent substrates.

公开(公告)号：US20240258279A1

公开(公告)日：2024-08-01

申请号：US18016589

申请日：2022-02-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xue Dong ,  Guangcai Yuan ,  Xin Gu ,  Junwei Yan ,  Fei Wang ,  Xiao Zhang ,  Haixu Li ,  Xuan Liang ,  Chengfei Wang ,  Mingxing Wang ,  Shulei Li ,  Xiaolei Zhang ,  Xinxin Zhao

IPC: H01L25/075 ,  H01L21/68 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L21/681 ,  H01L33/0093

Abstract: An optical path structure, an optical path system, and a transfer method. The optical path structure includes a beam adjustment module configured to adjust a diameter of a laser beam and output a first beam; a beam shaping module configured to perform energy homogenization on the first beam to obtain a second beam; and a beam focusing module configured to focus the second beam and output a target light spot; the target light spot is used for irradiating a device substrate, so that a bonding material in the device substrate changes after being irradiated by the target light spot, and a target device is separated from a carrier substrate; where the bonding material is disposed between the target device and the carrier substrate.

公开(公告)号：US11538892B2

公开(公告)日：2022-12-27

申请号：US17042625

申请日：2020-04-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shulei Li ,  Hua Huang ,  Changhan Hsieh

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display panel, a manufacturing method of the display panel, and a display device including the display panel are provided. The display panel includes an insulating substrate; a first circuit at a first side of the insulating substrate; and a second circuit at a second side of the insulating substrate. The first side and the second side of the insulating substrate are opposite to each other in a first direction perpendicular to a display surface, and the first circuit and the second circuit on opposing sides of the insulating substrate are electrically connected by tapered through hole and tapered pad.

公开(公告)号：US12249529B2

公开(公告)日：2025-03-11

申请号：US17427628

申请日：2020-10-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu Li ,  Xiao Zhang ,  Fei Wang ,  Mingxing Wang ,  Shulei Li ,  Xue Dong ,  Guangcai Yuan ,  Zhanfeng Cao ,  Xin Gu ,  Ke Wang ,  Feng Qu ,  Xuan Liang ,  Junwei Yan

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

Abstract: A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.

公开(公告)号：US11886063B2

公开(公告)日：2024-01-30

申请号：US16977300

申请日：2019-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shulei Li ,  Hua Huang ,  Zhao Kang

IPC: G02F1/1333 ,  G02F1/1335

CPC classification number: G02F1/133351 ,  G02F1/133514

Abstract: A display panel motherboard, a cutting method and a manufacturing method thereof, a display panel, and a display device are provided. The display panel motherboard includes at least three mother substrates, at least one display panel unit, and a cutting region. The at least three mother substrates are stacked with each other, at least a portion of the at least one display panel unit is surrounded by the cutting region, and an organic film layer is not disposed in at least two of the at least three mother substrates in the cutting region.

公开(公告)号：US11454840B2

公开(公告)日：2022-09-27

申请号：US17225077

申请日：2021-04-07

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shulei Li ,  Menghua Zhao ,  Changhan Hsieh ,  Zhao Kang

IPC: G02F1/1335 ,  G02F1/1343 ,  G02F1/1339 ,  H01L27/28 ,  G02F1/1333 ,  G02F1/1368

Abstract: Provided are a display panel, a preparation method thereof, and a display apparatus. The display panel includes an array substrate and a color filter substrate aligned and combined into a cell. The color filter substrate includes a first base substrate and a plurality of color resist blocks arranged at intervals on the first base substrate. The array substrate includes a second base substrate and a plurality of pixel electrodes arranged at intervals on the second base substrate. The pixel electrodes are in one-to-one correspondence with the color resist blocks. The display panel includes a bending area and a non-bending area located at least on one side of the bending area. A density of the pixel electrodes in the bending area is less than that in the non-bending area, and a density of the color resist blocks in the bending area is less than that in the non-bending area.