公开(公告)号：US3828329A

公开(公告)日：1974-08-06

申请号：US27444372

申请日：1972-07-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： FISCHER R ,  NORTH J ,  WOLFE R

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0816

Abstract: A field access, single wall domain propagation arrangement is defined by a pattern of ion implanted regions in a domain supporting layer. Either positive or negative magnetostriction effects result in changing pole patterns for domain movement in response to a magnetic field reorienting in the plane of domain layer.

Abstract translation: 场接入单壁域传播布置由域支持层中的离子注入区域的图案定义。 正或负磁致伸缩效应可导致响应于域层平面中的磁场重新定向而改变畴移动的极图。

公开(公告)号：US3808068A

公开(公告)日：1974-04-30

申请号：US31387472

申请日：1972-12-11

Applicant: BELL TELEPHONE LABOR INC

Inventor： JOHNSON W ,  NORTH J ,  WOLFE R

IPC: C04B41/53 ,  C09K13/04 ,  C30B33/00 ,  H01F41/34 ,  C23B3/04 ,  C23F1/02

CPC classification number: H01F41/34 ,  C04B41/5353 ,  C09K13/04 ,  C30B29/28 ,  C30B33/00 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/15

Abstract: A method for etching selected areas of single crystal garnets. The crystal is subjected to an ion implantation in the area to be etched. A proper etching solution is then applied to the crystal. The damaged area formed by the ion implantation will etch at a significantly greater rate than the remainder of the material. The process is self-limiting since the depth to which the crystal is etched is dependent upon the depth of the implantation and not upon the etching temperature or the length of time the etchant is applied. The differential etching rate also eliminates undesirable undercutting which usually results from the use of masked chemical etching techniques. The process may be used to form a wide variety of structures in garnet material for application in magnetic domain devices and integrated optics components.

Abstract translation: 用于蚀刻单晶石榴石的选定区域的方法。 在待蚀刻的区域中对晶体进行离子注入。 然后将合适的蚀刻溶液施加到晶体上。 通过离子注入形成的损伤区域将以比材料的其余部分显着更大的速率蚀刻。 该过程是自限制的，因为蚀刻晶体的深度取决于注入的深度，而不是蚀刻温度或施加蚀刻剂的时间长度。 差分蚀刻速率也消除了通常由使用掩蔽化学蚀刻技术引起的不期望的底切。 该方法可用于在石榴石材料中形成多种结构以用于磁畴装置和集成光学部件。

公开(公告)号：US3764195A

公开(公告)日：1973-10-09

申请号：US3764195D

申请日：1972-02-02

Applicant: BELL TELEPHONE LABOR INC

Inventor： LEVINSTEIN H ,  KING TIEN P ,  BLANK S ,  LE CRAW R ,  WOLFE R ,  VARNERIN L ,  WEMPLE S

IPC: G02B6/12 ,  G02B6/34 ,  G02F1/09 ,  G02F1/095 ,  H01F10/24 ,  H01S3/063 ,  G02B5/14

CPC classification number: G02B6/12004 ,  G02B6/34 ,  G02F1/095 ,  H01F10/245 ,  H01S3/0632

Abstract: Thin-film optical waveguides are disclosed comprising singlecrystal rare-earth garnet films deposited on garnet substrates. Epitaxial film growth techniques, developed largely for magnetic bubble domain devices, provide films with superior optical properties either at visible or near-visible wavelengths. The thin-film optical waveguides are comprised of transparent garnet films of the general formula R3B5O12; where R can be yttrium, lanthanum, bismuth, or a rare-earth ion with an atomic number of 60 to 71 inclusive, and B an be either magnetic, i.e., iron, or nommagnetic, i.e., gallium or aluminum. The use of the former types of films can give rise to various thin-film magnetic devices suitable for integrated optical circuit arrangements. One such device which is disclosed, a thin-film magneto-optical switch and modulator, includes a light-guiding film of an iron garnet composition and a serpentine micro-circuit which is deposited on the film to carry a switching current. The device provides a continuous switching of the polarization modes of the light waves guided in the film. Similarly, by applying a microwave current to the same circuit, the guided light can be modulated.

Abstract translation: 披露了沉积在石榴石基底上的单晶稀土石榴石薄膜的薄膜光波导。 外延膜生长技术主要用于磁性气泡域装置，在可见光或近可见光波长下提供具有优异光学性质的膜。 薄膜光波导由通式R3B5O12的透明石榴石膜构成; 其中R可以是钇，镧，铋或含有原子数为60〜71的稀土离子，B a为磁性，即铁，或非磁性，即镓或铝。 使用前一种类型的膜可以产生适合于集成光电路布置的各种薄膜磁性装置。 公开的一种这样的装置，薄膜​​磁光开关和调制器，包括铁石榴石组合物的导光膜和沉积在膜上以承载开关电流的蛇形微电路。 该装置提供在膜中引导的光波的偏振模式的连续切换。 类似地，通过对同一电路施加微波电流，可以调制导向光。

公开(公告)号：US3778788A

公开(公告)日：1973-12-11

申请号：US3778788D

申请日：1972-11-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： BOBECK A ,  COPELAND J ,  WOLFE R

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0841

Abstract: Domain propagation along a path defined by a straight line conductor is achieved by driving domains back and forth across the conductor against the edges of regions forbidden to the domains. By angling the edges of the regions with respect to the axis of the conductor and by offsetting those edges associated with one edge of the conductor with respect to those associated with the other, the back and forth motion is translated into movement along the axis.

Abstract translation: 通过由直线导体限定的路径的域传播是通过将导体横穿导体抵抗不被域阻挡的区域的边缘来回驱动来实现的。 通过相对于导体的轴线倾斜区域的边缘并且通过将与导体的一个边缘相关联的那些边缘相对于与另一个相关联的边缘偏移，来回运动被转换为沿着轴的运动。

公开(公告)号：US3845477A

公开(公告)日：1974-10-29

申请号：US30898972

申请日：1972-11-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： WOLFE R ,  CRAW R ,  LEVINSTEIN H

IPC: G11C19/08 ,  H01F10/24 ,  G11C11/14

CPC classification number: G11C19/08 ,  H01F10/24

Abstract: Magnetization barriers for a variety of magnetic garnets containing partial non-magnetic substitutional ions replacing iron are altered by annealing. A relatively large order change in magnetization is effected under an intimately contacting layer of silicon which may cover the entirety of a surface or which may define a particular desired pattern. Magnetization changes, either increased or decreased, of the order of 30 percent or greater, may result from annealing for periods of the order of a few minutes within the temperature range of from about 500* to 800* C. Resulting ''''tailored'''' material may be utilized in magnetic switches or memories.

Abstract translation: 通过退火改变了含有部分非磁性替代离子替代铁的各种磁性石榴石的磁化屏障。 磁化的相对较大的次序变化在可以覆盖整个表面或可以限定特定期望图案的紧密接触的硅层下进行。 增加或减少30％或更高量级的磁化变化可能是在约500℃至800℃的温度范围内退火几分钟的时间段。所得到的“定制”材料可能 可用于磁性开关或存储器。

公开(公告)号：US3792452A

公开(公告)日：1974-02-12

申请号：US3792452D

申请日：1971-06-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： NORTH J ,  VARNERIN L ,  DIXON M ,  MOLINE R ,  WOLFE R

IPC: C04B35/26 ,  G11C19/08 ,  H01F10/20 ,  H01F10/24 ,  H01F41/18

CPC classification number: H01F10/20 ,  C04B35/26 ,  G11C19/08 ,  H01F10/24 ,  H01F41/186

Abstract: Magnetic anisotropy in oxidic magnetic materials is altered by strain which is induced by local expansion of the lattice through ion implantation. This compressional strain in the instance of a material having positive magnetostriction may result in an enhanced magnetic easy direction normal to a major surface. Exemplary rare earth iron garnet materials have been so processed as to result in a thin surface region having appropriate magnetic properties for incorporation in ''''bubble'''' devices.

Abstract translation: 氧化磁性材料中的磁各向异性由通过离子注入的晶格的局部膨胀引起的应变改变。 在具有正磁致伸缩的材料的情况下的这种压缩应变可导致与主表面垂直的增强的磁性容易方向。 已经对典型的稀土铁石榴石材料进行了处理，以形成具有合适磁性的薄表面区域，以便结合到“气泡”装置中。