Magnetic devices utilizing ion-implanted magnetic materials
    1.
    发明授权
    Magnetic devices utilizing ion-implanted magnetic materials 失效
    使用离子注入磁性材料的磁性器件

    公开(公告)号:US3792452A

    公开(公告)日:1974-02-12

    申请号:US3792452D

    申请日:1971-06-10

    CPC classification number: H01F10/20 C04B35/26 G11C19/08 H01F10/24 H01F41/186

    Abstract: Magnetic anisotropy in oxidic magnetic materials is altered by strain which is induced by local expansion of the lattice through ion implantation. This compressional strain in the instance of a material having positive magnetostriction may result in an enhanced magnetic easy direction normal to a major surface. Exemplary rare earth iron garnet materials have been so processed as to result in a thin surface region having appropriate magnetic properties for incorporation in ''''bubble'''' devices.

    Abstract translation: 氧化磁性材料中的磁各向异性由通过离子注入的晶格的局部膨胀引起的应变改变。 在具有正磁致伸缩的材料的情况下的这种压缩应变可导致与主表面垂直的增强的磁性容易方向。 已经对典型的稀土铁石榴石材料进行了处理,以形成具有合适磁性的薄表面区域,以便结合到“气泡”装置中。

    Hydrogen annealing of substituted magnetic garnets and materials so produced
    2.
    发明授权
    Hydrogen annealing of substituted magnetic garnets and materials so produced 失效
    取代的磁性GARNETS和材料的氢化退火

    公开(公告)号:US3759745A

    公开(公告)日:1973-09-18

    申请号:US3759745D

    申请日:1971-07-14

    Inventor: DIXON M KURTZIG A

    CPC classification number: H01F10/24 C04B35/2675 Y10S428/90

    Abstract: MAGNETIZATION VALUES FOR A VARIETY OF MAGNETIC GARNETS CONTAINING PARTIAL NONMAGNETIC SUBSTITUTIONAL IONS REPLACING IRON ARE ALTERED BY ANNEALING IN HYDROGEN-CONTAINING ATMOSPHERES. SUCH CHANGES WHICH MAY BE BROUGHT ABOUT IN PERIODS AS SHORT AS FIVE MINUTES OR LESS AT TEMPERATURES OF THE ORDER OF FROM 500*C TO 800*C. RESULT FROM THE TEMPERATURE DEPENDENCE OF SITE PREFERENCE OF SUCH NONMAGNETIC SUBSTITUTIONAL IONS. SUCH CHANGES MAY ACCOMPLISH A "TAILORING" OF THE GARNET MATERIAL FOR USE IN MAGNETIC SWITCHES AND MEMORIES.

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