公开(公告)号：US3828329A

公开(公告)日：1974-08-06

申请号：US27444372

申请日：1972-07-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： FISCHER R ,  NORTH J ,  WOLFE R

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0816

Abstract: A field access, single wall domain propagation arrangement is defined by a pattern of ion implanted regions in a domain supporting layer. Either positive or negative magnetostriction effects result in changing pole patterns for domain movement in response to a magnetic field reorienting in the plane of domain layer.

Abstract translation: 场接入单壁域传播布置由域支持层中的离子注入区域的图案定义。 正或负磁致伸缩效应可导致响应于域层平面中的磁场重新定向而改变畴移动的极图。

公开(公告)号：US3808068A

公开(公告)日：1974-04-30

申请号：US31387472

申请日：1972-12-11

Applicant: BELL TELEPHONE LABOR INC

Inventor： JOHNSON W ,  NORTH J ,  WOLFE R

IPC: C04B41/53 ,  C09K13/04 ,  C30B33/00 ,  H01F41/34 ,  C23B3/04 ,  C23F1/02

CPC classification number: H01F41/34 ,  C04B41/5353 ,  C09K13/04 ,  C30B29/28 ,  C30B33/00 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/15

Abstract: A method for etching selected areas of single crystal garnets. The crystal is subjected to an ion implantation in the area to be etched. A proper etching solution is then applied to the crystal. The damaged area formed by the ion implantation will etch at a significantly greater rate than the remainder of the material. The process is self-limiting since the depth to which the crystal is etched is dependent upon the depth of the implantation and not upon the etching temperature or the length of time the etchant is applied. The differential etching rate also eliminates undesirable undercutting which usually results from the use of masked chemical etching techniques. The process may be used to form a wide variety of structures in garnet material for application in magnetic domain devices and integrated optics components.

Abstract translation: 用于蚀刻单晶石榴石的选定区域的方法。 在待蚀刻的区域中对晶体进行离子注入。 然后将合适的蚀刻溶液施加到晶体上。 通过离子注入形成的损伤区域将以比材料的其余部分显着更大的速率蚀刻。 该过程是自限制的，因为蚀刻晶体的深度取决于注入的深度，而不是蚀刻温度或施加蚀刻剂的时间长度。 差分蚀刻速率也消除了通常由使用掩蔽化学蚀刻技术引起的不期望的底切。 该方法可用于在石榴石材料中形成多种结构以用于磁畴装置和集成光学部件。

公开(公告)号：US3792452A

公开(公告)日：1974-02-12

申请号：US3792452D

申请日：1971-06-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： NORTH J ,  VARNERIN L ,  DIXON M ,  MOLINE R ,  WOLFE R

IPC: C04B35/26 ,  G11C19/08 ,  H01F10/20 ,  H01F10/24 ,  H01F41/18

CPC classification number: H01F10/20 ,  C04B35/26 ,  G11C19/08 ,  H01F10/24 ,  H01F41/186

Abstract: Magnetic anisotropy in oxidic magnetic materials is altered by strain which is induced by local expansion of the lattice through ion implantation. This compressional strain in the instance of a material having positive magnetostriction may result in an enhanced magnetic easy direction normal to a major surface. Exemplary rare earth iron garnet materials have been so processed as to result in a thin surface region having appropriate magnetic properties for incorporation in ''''bubble'''' devices.

Abstract translation: 氧化磁性材料中的磁各向异性由通过离子注入的晶格的局部膨胀引起的应变改变。 在具有正磁致伸缩的材料的情况下的这种压缩应变可导致与主表面垂直的增强的磁性容易方向。 已经对典型的稀土铁石榴石材料进行了处理，以形成具有合适磁性的薄表面区域，以便结合到“气泡”装置中。