公开(公告)号：US3808068A

公开(公告)日：1974-04-30

申请号：US31387472

申请日：1972-12-11

Applicant: BELL TELEPHONE LABOR INC

Inventor： JOHNSON W ,  NORTH J ,  WOLFE R

IPC: C04B41/53 ,  C09K13/04 ,  C30B33/00 ,  H01F41/34 ,  C23B3/04 ,  C23F1/02

CPC classification number: H01F41/34 ,  C04B41/5353 ,  C09K13/04 ,  C30B29/28 ,  C30B33/00 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/15

Abstract: A method for etching selected areas of single crystal garnets. The crystal is subjected to an ion implantation in the area to be etched. A proper etching solution is then applied to the crystal. The damaged area formed by the ion implantation will etch at a significantly greater rate than the remainder of the material. The process is self-limiting since the depth to which the crystal is etched is dependent upon the depth of the implantation and not upon the etching temperature or the length of time the etchant is applied. The differential etching rate also eliminates undesirable undercutting which usually results from the use of masked chemical etching techniques. The process may be used to form a wide variety of structures in garnet material for application in magnetic domain devices and integrated optics components.

Abstract translation: 用于蚀刻单晶石榴石的选定区域的方法。 在待蚀刻的区域中对晶体进行离子注入。 然后将合适的蚀刻溶液施加到晶体上。 通过离子注入形成的损伤区域将以比材料的其余部分显着更大的速率蚀刻。 该过程是自限制的，因为蚀刻晶体的深度取决于注入的深度，而不是蚀刻温度或施加蚀刻剂的时间长度。 差分蚀刻速率也消除了通常由使用掩蔽化学蚀刻技术引起的不期望的底切。 该方法可用于在石榴石材料中形成多种结构以用于磁畴装置和集成光学部件。