Method for controlling magnetization in garnet material and devices so produced
    1.
    发明授权
    Method for controlling magnetization in garnet material and devices so produced 失效
    用于控制所制造的GARNET材料和装置中的磁化的方法

    公开(公告)号:US3845477A

    公开(公告)日:1974-10-29

    申请号:US30898972

    申请日:1972-11-24

    CPC classification number: G11C19/08 H01F10/24

    Abstract: Magnetization barriers for a variety of magnetic garnets containing partial non-magnetic substitutional ions replacing iron are altered by annealing. A relatively large order change in magnetization is effected under an intimately contacting layer of silicon which may cover the entirety of a surface or which may define a particular desired pattern. Magnetization changes, either increased or decreased, of the order of 30 percent or greater, may result from annealing for periods of the order of a few minutes within the temperature range of from about 500* to 800* C. Resulting ''''tailored'''' material may be utilized in magnetic switches or memories.

    Abstract translation: 通过退火改变了含有部分非磁性替代离子替代铁的各种磁性石榴石的磁化屏障。 磁化的相对较大的次序变化在可以覆盖整个表面或可以限定特定期望图案的紧密接触的硅层下进行。 增加或减少30%或更高量级的磁化变化可能是在约500℃至800℃的温度范围内退火几分钟的时间段。所得到的“定制”材料可能 可用于磁性开关或存储器。

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