Abstract:
Magnetization barriers for a variety of magnetic garnets containing partial non-magnetic substitutional ions replacing iron are altered by annealing. A relatively large order change in magnetization is effected under an intimately contacting layer of silicon which may cover the entirety of a surface or which may define a particular desired pattern. Magnetization changes, either increased or decreased, of the order of 30 percent or greater, may result from annealing for periods of the order of a few minutes within the temperature range of from about 500* to 800* C. Resulting ''''tailored'''' material may be utilized in magnetic switches or memories.