Controlled epitaxial growth from supercooled nutrient-flux solution
    1.
    发明授权
    Controlled epitaxial growth from supercooled nutrient-flux solution 失效
    超级营养液溶液控制外源性生长

    公开(公告)号:US3790405A

    公开(公告)日:1974-02-05

    申请号:US3790405D

    申请日:1971-07-16

    Inventor: LEVINSTEIN H

    CPC classification number: C04B35/2675 C30B19/02

    Abstract: Controlled growth of epitaxial layers of a variety of structures including garnet, spinel, and corundum are grown out of supercooled nutrient-flux solutions. Controlled growth, both of composition and physical characteristics, is attributed to the conditions that make the procedure primarily diffusion (rather than atomic kinetic) controlled. Such conditions include high dilution of nutrient and high viscosity of the solution.

    Abstract translation: 由过冷的营养物质溶液生长包括石榴石,尖晶石和刚玉在内的各种结构的外延层的受控生长。 控制生长,组成和物理特性都归因于使程序主要扩散(而不是原子动力学)受控的条件。 这些条件包括营养物的高稀释度和溶液的高粘度。

    Optical waveguide devices using single-crystal garnet films
    2.
    发明授权
    Optical waveguide devices using single-crystal garnet films 失效
    使用单晶格栅膜的光波器件

    公开(公告)号:US3764195A

    公开(公告)日:1973-10-09

    申请号:US3764195D

    申请日:1972-02-02

    CPC classification number: G02B6/12004 G02B6/34 G02F1/095 H01F10/245 H01S3/0632

    Abstract: Thin-film optical waveguides are disclosed comprising singlecrystal rare-earth garnet films deposited on garnet substrates. Epitaxial film growth techniques, developed largely for magnetic bubble domain devices, provide films with superior optical properties either at visible or near-visible wavelengths. The thin-film optical waveguides are comprised of transparent garnet films of the general formula R3B5O12; where R can be yttrium, lanthanum, bismuth, or a rare-earth ion with an atomic number of 60 to 71 inclusive, and B an be either magnetic, i.e., iron, or nommagnetic, i.e., gallium or aluminum. The use of the former types of films can give rise to various thin-film magnetic devices suitable for integrated optical circuit arrangements. One such device which is disclosed, a thin-film magneto-optical switch and modulator, includes a light-guiding film of an iron garnet composition and a serpentine micro-circuit which is deposited on the film to carry a switching current. The device provides a continuous switching of the polarization modes of the light waves guided in the film. Similarly, by applying a microwave current to the same circuit, the guided light can be modulated.

    Abstract translation: 披露了沉积在石榴石基底上的单晶稀土石榴石薄膜的薄膜光波导。 外延膜生长技术主要用于磁性气泡域装置,在可见光或近可见光波长下提供具有优异光学性质的膜。 薄膜光波导由通式R3B5O12的透明石榴石膜构成; 其中R可以是钇,镧,铋或含有原子数为60〜71的稀土离子,B a为磁性,即铁,或非磁性,即镓或铝。 使用前一种类型的膜可以产生适合于集成光电路布置的各种薄膜磁性装置。 公开的一种这样的装置,薄膜​​磁光开关和调制器,包括铁石榴石组合物的导光膜和沉积在膜上以承载开关电流的蛇形微电路。 该装置提供在膜中引导的光波的偏振模式的连续切换。 类似地,通过对同一电路施加微波电流,可以调制导向光。

    Method for controlling magnetization in garnet material and devices so produced
    3.
    发明授权
    Method for controlling magnetization in garnet material and devices so produced 失效
    用于控制所制造的GARNET材料和装置中的磁化的方法

    公开(公告)号:US3845477A

    公开(公告)日:1974-10-29

    申请号:US30898972

    申请日:1972-11-24

    CPC classification number: G11C19/08 H01F10/24

    Abstract: Magnetization barriers for a variety of magnetic garnets containing partial non-magnetic substitutional ions replacing iron are altered by annealing. A relatively large order change in magnetization is effected under an intimately contacting layer of silicon which may cover the entirety of a surface or which may define a particular desired pattern. Magnetization changes, either increased or decreased, of the order of 30 percent or greater, may result from annealing for periods of the order of a few minutes within the temperature range of from about 500* to 800* C. Resulting ''''tailored'''' material may be utilized in magnetic switches or memories.

    Abstract translation: 通过退火改变了含有部分非磁性替代离子替代铁的各种磁性石榴石的磁化屏障。 磁化的相对较大的次序变化在可以覆盖整个表面或可以限定特定期望图案的紧密接触的硅层下进行。 增加或减少30%或更高量级的磁化变化可能是在约500℃至800℃的温度范围内退火几分钟的时间段。所得到的“定制”材料可能 可用于磁性开关或存储器。

    Magnetic devices utilizing garnet epitaxial materials and method of production
    4.
    发明授权
    Magnetic devices utilizing garnet epitaxial materials and method of production 失效
    使用GARNET外来材料的磁性装置和生产方法

    公开(公告)号:US3837911A

    公开(公告)日:1974-09-24

    申请号:US19397671

    申请日:1971-10-29

    CPC classification number: H01F41/28 C04B35/2675 C30B19/02 C30B29/28 G11C19/08

    Abstract: Magnetic garnet compositions grown by liquid phase epitaxy have appropriate magnetic properties for use in bubble domain devices - a class of magnetic devices in which information is represented by enclosed domain regions of polarity opposite to that of immediately surrounding material. Critical selection of compositions, all containing mixed rare earth cations, as well as careful choice of processing conditions yield films which are both uniform in composition and dimension, as well as lacking in hillock formation and other surface irregularities.

    Abstract translation: 通过液相外延生长的磁性石榴石组合具有适用于气泡区域装置的磁性能 - 一类磁性装置,其中信息由与立即周围材料相反极性的封闭结构域区域表示。 所有含有混合稀土阳离子的组合物的临界选择以及加工条件的仔细选择产生了组成和尺寸均匀且缺少小丘形成和其它表面不规则性的膜。

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