公开(公告)号：US12236575B2

公开(公告)日：2025-02-25

申请号：US17492905

申请日：2021-10-04

Applicant: Applied Materials, Inc.

Inventor： Yangyang Sun ,  Jinxin Fu ,  Kazuya Daito ,  Ludovic Godet

IPC: G06T7/00 ,  G01J1/42 ,  G01J1/44 ,  G01N21/958 ,  G02B27/01 ,  G06T7/80 ,  G06T7/90 ,  H04N23/56 ,  H04N23/74 ,  H04N23/90

Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of first metrics and one or more second metrics for optical devices, the one or more second metrics including a display leakage metric.

公开(公告)号：US12230479B2

公开(公告)日：2025-02-18

申请号：US18599767

申请日：2024-03-08

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US11598003B2

公开(公告)日：2023-03-07

申请号：US15702234

申请日：2017-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Faruk Gungor ,  Dien-Yeh Wu ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong Yuan ,  Kazuya Daito ,  Avgerinos V. Gelatos ,  Takashi Kuratomi ,  Yu Chang ,  Bin Cao

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/46 ,  C23C16/458

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

公开(公告)号：US11515200B2

公开(公告)日：2022-11-29

申请号：US17110826

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  He Ren ,  Yu Lei ,  Shi You ,  Kazuya Daito

IPC: H01L21/768

Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

公开(公告)号：US20180145034A1

公开(公告)日：2018-05-24

申请号：US15817985

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Feiyue Ma ,  Yu Lei ,  Kazuya Daito ,  Vikash Banthia ,  Kai Wu ,  Jenn Yue Wang ,  Mei Chang

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/528 ,  H01L21/285

Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

公开(公告)号：US09162930B2

公开(公告)日：2015-10-20

申请号：US13867606

申请日：2013-04-22

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Kazuya Daito ,  Rajkumar Jakkaraju ,  Xianmin Tang

IPC: C23C14/34 ,  C04B35/581 ,  C23C14/06 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02

CPC classification number: C04B35/581 ,  C23C14/0617 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/0332 ,  H01L21/32139

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract translation: 本发明一般涉及掺杂氮化铝硬掩模和制造掺杂氮化铝硬掩模的方法。 通过在形成氮化铝硬掩模时添加少量的掺杂剂，例如氧，可以显着降低硬掩模的湿蚀刻速率。 另外，由于掺杂剂的存在，与未掺杂的氮化铝硬掩模相比，硬掩模的晶粒尺寸减小。 减小的晶粒尺寸导致在硬掩模中更平滑的特征，这导致在利用硬掩模时对底层进行更精确的蚀刻。

公开(公告)号：US11967525B2

公开(公告)日：2024-04-23

申请号：US17878599

申请日：2022-08-01

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC: H01L21/68 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

公开(公告)号：US11955381B2

公开(公告)日：2024-04-09

申请号：US16908076

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Geraldine M. Vasquez ,  Da He ,  Jallepally Ravi ,  Yu Lei ,  Dien-Yeh Wu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/76883 ,  H01J37/32174 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/67028

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US11748875B2

公开(公告)日：2023-09-05

申请号：US17492826

申请日：2021-10-04

Applicant: Applied Materials, Inc.

Inventor： Yangyang Sun ,  Jinxin Fu ,  Kazuya Daito ,  Ludovic Godet

IPC: G06T7/00 ,  G06T7/90 ,  G06T7/80 ,  G01J1/42 ,  G02B27/01 ,  G01J1/44 ,  G01N21/958 ,  H04N23/56 ,  H04N23/74 ,  H04N23/90

CPC classification number: G06T7/001 ,  G01J1/42 ,  G01J1/44 ,  G01N21/958 ,  G02B27/0172 ,  G06T7/80 ,  G06T7/90 ,  H04N23/56 ,  H04N23/74 ,  H04N23/90 ,  G01J2001/4247 ,  G01N2021/9583 ,  G02B2027/014 ,  G02B2027/0112 ,  G02B2027/0118 ,  G02B2027/0138 ,  G06T2207/10024 ,  G06T2207/30108

Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of see-through metrics for optical devices.

公开(公告)号：US20220367264A1

公开(公告)日：2022-11-17

申请号：US17878599

申请日：2022-08-01

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Yu Lei ,  Kazuya Daito ,  Da He ,  Jiajie Cen

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.