公开(公告)号：US11162170B2

公开(公告)日：2021-11-02

申请号：US14599831

申请日：2015-01-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Alan A. Ritchie ,  Zhenbin Ge ,  Jenn Yue Wang ,  Sally Lou

IPC: C23C14/58 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.

公开(公告)号：US20180145034A1

公开(公告)日：2018-05-24

申请号：US15817985

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Feiyue Ma ,  Yu Lei ,  Kazuya Daito ,  Vikash Banthia ,  Kai Wu ,  Jenn Yue Wang ,  Mei Chang

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/528 ,  H01L21/285

Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.