FORMATION OF ANGLED GRATINGS
    1.
    发明申请

    公开(公告)号:US20220301926A1

    公开(公告)日:2022-09-22

    申请号:US17832570

    申请日:2022-06-03

    Abstract: Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.

    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS

    公开(公告)号:US20210333450A1

    公开(公告)日:2021-10-28

    申请号:US16606575

    申请日:2019-04-17

    Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles θ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1(tan(θ′)/tan(θ)).

    ELECTRIC/MAGNETIC FIELD GUIDED ACID DIFFUSION
    5.
    发明申请
    ELECTRIC/MAGNETIC FIELD GUIDED ACID DIFFUSION 有权
    电磁场指导酸扩散

    公开(公告)号:US20150355549A1

    公开(公告)日:2015-12-10

    申请号:US14301184

    申请日:2014-06-10

    CPC classification number: G03F7/38 B82Y10/00 G03F7/20 G03F7/26 G03F7/70

    Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

    Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散,防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。

    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS

    公开(公告)号:US20220260764A1

    公开(公告)日:2022-08-18

    申请号:US17737723

    申请日:2022-05-05

    Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1 (tan()/tan()).

    METHOD OF FORMING A PLURALITY OF GRATINGS

    公开(公告)号:US20220161363A1

    公开(公告)日:2022-05-26

    申请号:US17650814

    申请日:2022-02-11

    Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

    MODULATION OF ROLLING K VECTORS OF ANGLED GRATINGS

    公开(公告)号:US20210027985A1

    公开(公告)日:2021-01-28

    申请号:US17037935

    申请日:2020-09-30

    Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

    HANDLING AND PROCESSING DOUBLE-SIDED DEVICES ON FRAGILE SUBSTRATES

    公开(公告)号:US20220077794A1

    公开(公告)日:2022-03-10

    申请号:US17455312

    申请日:2021-11-17

    Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

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