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    CONCURRENT OR CYCLICAL ETCH AND DIRECTIONAL DEPOSITION
    1.
    发明申请
    CONCURRENT OR CYCLICAL ETCH AND DIRECTIONAL DEPOSITION 有权

    公开(公告)号：US20250046601A1

    公开(公告)日：2025-02-06

    申请号：US18229544

    申请日：2023-08-02

    Applicant: Applied Materials, Inc.

    Inventor： Morgan EVANS ,  John HAUTALA ,  Charith NANAYAKKARA

    IPC: H01L21/02 ,  H01J37/32

    Abstract: An etching and deposition system including a process chamber containing a platen for supporting a substrate, an reactive-ion etching (RIE) source adapted to produce an ion beam and to direct the ion beam into the process chamber for etching the substrate, a first plasma enhanced chemical vapor deposition (PECVD) source located on a first side of the RIE source, the first PECVD source adapted to produce a first radical beam and to direct the first radical beam into the process chamber for depositing a first material, and a second PECVD source located on a second side of the RIE source opposite the first side, the second PECVD source adapted to produce a second radical beam and to direct the second radical beam into the process chamber for depositing a second material.

    METHOD FOR ROUGHNESS REDUCTION IN MANUFACTURING OPTICAL DEVICE STRUCTURES
    2.
    发明公开
    METHOD FOR ROUGHNESS REDUCTION IN MANUFACTURING OPTICAL DEVICE STRUCTURES 审中-公开

    公开(公告)号：US20230375774A1

    公开(公告)日：2023-11-23

    申请号：US18303804

    申请日：2023-04-20

    Applicant: Applied Materials, Inc.

    Inventor： Thomas James SOLDI ,  Joseph OLSON ,  Morgan EVANS ,  Ludovic GODET

    IPC: F21V8/00 ,  G02B5/18

    CPC classification number: G02B6/0065 ,  G02B5/1857 ,  G02B6/0016 ,  G02B6/0036

    Abstract: Embodiments described herein relate to a method of using an apparatus for forming waveguides. The method includes positioning a substrate at a first rotation angle, exposing the substrate to an ion beam, forming first partial trenches defined by adjacent angled device structures with the first device angle, rotating the substrate to a second rotation angle, exposing the substrate to the ion beam, etching the first partial trenches, and repeating the method from about 1 cycle to about 100 cycles to form a plurality of trenches defined by adjacent angled device structures. The first rotation angle is selected to form one or more angled device structures with a first device angle relative to a vector parallel to the substrate. The ion beam is configured to contact the substrate at a beam angle ϑ relative to a surface normal of the substrate.

    ETCH IMPROVEMENT
    6.
    发明申请
    ETCH IMPROVEMENT 有权

    公开(公告)号：US20210247554A1

    公开(公告)日：2021-08-12

    申请号：US17147338

    申请日：2021-01-12

    Applicant: Applied Materials, Inc.

    Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Morgan EVANS ,  Maurice Emerson PEPLOSKI ,  Joseph C. OLSON ,  Thomas James SOLDI

    IPC: G02B5/18 ,  H01J37/305

    Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕ1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

    FORMATION OF ANGLED GRATINGS
    7.
    发明申请
    FORMATION OF ANGLED GRATINGS 有权

    公开(公告)号：US20220301926A1

    公开(公告)日：2022-09-22

    申请号：US17832570

    申请日：2022-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Joseph C. OLSON ,  Morgan EVANS

    IPC: H01L21/768 ,  H01L21/308 ,  H01J37/304 ,  H01J37/317

    Abstract: Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.

    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS
    8.
    发明申请
    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS 有权

    公开(公告)号：US20210333450A1

    公开(公告)日：2021-10-28

    申请号：US16606575

    申请日：2019-04-17

    Applicant: Applied Materials, Inc.

    Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Morgan EVANS ,  Joseph C. OLSON

    IPC: G02B5/18 ,  H01J37/305 ,  H01J37/20 ,  H01J37/302

    Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle θ relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles θ′ relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1(tan(θ′)/tan(θ)).

    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS
    10.
    发明申请
    CONTROLLING ETCH ANGLES BY SUBSTRATE ROTATION IN ANGLED ETCH TOOLS 有权

    公开(公告)号：US20220260764A1

    公开(公告)日：2022-08-18

    申请号：US17737723

    申请日：2022-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Morgan EVANS ,  Joseph C. OLSON

    IPC: G02B5/18 ,  H01J37/305 ,  H01J37/20 ,  H01J37/302

    Abstract: Embodiments described herein relate to methods of forming gratings with different slant angles on a substrate and forming gratings with different slant angles on successive substrates using angled etch systems. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle relative to a surface normal of the substrates and form gratings in the grating material. The substrates are rotated about an axis of the platen resulting in rotation angles ϕ between the ion beam and a surface normal of the gratings. The gratings have slant angles relative to the surface normal of the substrates. The rotation angles ϕ selected by an equation ϕ=cos−1 (tan()/tan()).

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