公开(公告)号：US20230375774A1

公开(公告)日：2023-11-23

申请号：US18303804

申请日：2023-04-20

Applicant: Applied Materials, Inc.

Inventor： Thomas James SOLDI ,  Joseph OLSON ,  Morgan EVANS ,  Ludovic GODET

IPC: F21V8/00 ,  G02B5/18

CPC classification number: G02B6/0065 ,  G02B5/1857 ,  G02B6/0016 ,  G02B6/0036

Abstract: Embodiments described herein relate to a method of using an apparatus for forming waveguides. The method includes positioning a substrate at a first rotation angle, exposing the substrate to an ion beam, forming first partial trenches defined by adjacent angled device structures with the first device angle, rotating the substrate to a second rotation angle, exposing the substrate to the ion beam, etching the first partial trenches, and repeating the method from about 1 cycle to about 100 cycles to form a plurality of trenches defined by adjacent angled device structures. The first rotation angle is selected to form one or more angled device structures with a first device angle relative to a vector parallel to the substrate. The ion beam is configured to contact the substrate at a beam angle ϑ relative to a surface normal of the substrate.

公开(公告)号：US20210247554A1

公开(公告)日：2021-08-12

申请号：US17147338

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Rutger MEYER TIMMERMAN THIJSSEN ,  Morgan EVANS ,  Maurice Emerson PEPLOSKI ,  Joseph C. OLSON ,  Thomas James SOLDI

IPC: G02B5/18 ,  H01J37/305

Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕ1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.