公开(公告)号：US20250075315A1

公开(公告)日：2025-03-06

申请号：US18243042

申请日：2023-09-06

Applicant: Applied Materials, Inc.

Inventor： Charith NANAYAKKARA ,  John HAUTALA

IPC: C23C16/04 ,  C23C16/26

Abstract: A method of modifying an opening in a mask to achieve desired critical dimensions, the method including performing a pre-implant on the mask to implant the mask with a dopant material, wherein a material of the mask is densified and the opening is enlarged, directing a first radical beam at a first lateral side of the opening to deposit a layer of material on the first lateral side, and directing a second radical beam at a second lateral side of the opening opposite the first lateral side to deposit a layer of material on the second lateral side.

公开(公告)号：US20250046601A1

公开(公告)日：2025-02-06

申请号：US18229544

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Morgan EVANS ,  John HAUTALA ,  Charith NANAYAKKARA

IPC: H01L21/02 ,  H01J37/32

Abstract: An etching and deposition system including a process chamber containing a platen for supporting a substrate, an reactive-ion etching (RIE) source adapted to produce an ion beam and to direct the ion beam into the process chamber for etching the substrate, a first plasma enhanced chemical vapor deposition (PECVD) source located on a first side of the RIE source, the first PECVD source adapted to produce a first radical beam and to direct the first radical beam into the process chamber for depositing a first material, and a second PECVD source located on a second side of the RIE source opposite the first side, the second PECVD source adapted to produce a second radical beam and to direct the second radical beam into the process chamber for depositing a second material.