公开(公告)号：US09147558B2

公开(公告)日：2015-09-29

申请号：US13742692

申请日：2013-01-16

申请人： APPLIED MATERIALS, INC.

发明人： Bonnie T. Chia ,  Song-Moon Suh ,  Cheng-Hsiung Matthew Tsai ,  Robert Dinsmore ,  Glen T. Mori

IPC分类号： C23C14/00 ,  H01J37/32 ,  C23C14/56 ,  H01J37/34

CPC分类号： H01J37/32715 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32853 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3447

摘要： Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

摘要翻译： 本文提供了用于处理室的快门盘。 在一些实施例中，用于处理室的快门盘可以包括具有外周边，主体顶表面的主体，其中顶表面包括具有基本上水平的平面表面的中心部分，以及至少一个倾斜结构 设置在所述中心部分的径向外侧，所述至少一个倾斜结构中的每一个具有顶部和从所述顶部朝向所述外周边沿径向向外的方向以向下的角度设置的成角度的表面，以及所述主体的底表面 。

公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

申请人： Applied Materials, Inc.

发明人： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC分类号： H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US09177782B2

公开(公告)日：2015-11-03

申请号：US13785834

申请日：2013-03-05

申请人： APPLIED MATERIALS, INC.

发明人： James Matthew Holden ,  Song-Moon Suh ,  Shalina D. Sudheeran ,  Glen T. Mori

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02101 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/67051

摘要： A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.

摘要翻译： 基板清洁装置可以包括用于支撑具有第一侧和受污染的第二侧的基板的基板支撑构件; 液态二氧化碳源; 气态二氧化碳源; 以及耦合到液体二氧化碳源和气态二氧化碳源的一个或多个喷嘴，其中所述一个或多个喷嘴构造成接收液态二氧化碳并且从液态二氧化碳排出固体和气态二氧化碳的第一混合物 源至衬底的第二侧并接收气态二氧化碳，并将固体和气态二氧化碳的第二混合物从气态二氧化碳源排放到衬底的第二侧。 可以在基板清洗装置中进行清洗基板的方法。

公开(公告)号：US20220181124A1

公开(公告)日：2022-06-09

申请号：US17110596

申请日：2020-12-03

申请人： APPLIED MATERIALS, INC.

发明人： Ren-Guan Duan ,  Christopher Laurent Beaudry ,  Glen T. Mori

IPC分类号： H01J37/32

摘要： Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1xFw, M1xM2yFw or M1xM2yM3zFw, where at least one of M1, M2, or M3 is nickel. The metal fluoride coating can be formed directly on a substrate or on a coating of a substrate.

公开(公告)号：US20140196746A1

公开(公告)日：2014-07-17

申请号：US13743646

申请日：2013-01-17

申请人： Applied Materials, Inc.

发明人： Robert Dinsmore ,  John C. Forster ,  Song-Moon Sun ,  Cheng-Hsiung Tsai ,  Glen T. Mori

IPC分类号： H01L21/02

CPC分类号： H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/1134 ,  H01L2924/00014

摘要： Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

摘要翻译： 本发明的实施例一般涉及在衬底处理期间清洁处理室的方法。 在第一基板处理步骤期间，在处理室中由氩，氦和氢的气体混合物形成等离子体。 在第二基板处理步骤中，在处理室中形成氩等离子体。

公开(公告)号：US11587799B2

公开(公告)日：2023-02-21

申请号：US16939652

申请日：2020-07-27

申请人： APPLIED MATERIALS, INC.

发明人： Chien-Kang Hsiung ,  Yuichi Wada ,  Glen T. Mori

IPC分类号： H01L21/48 ,  H01L23/367

摘要： Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

公开(公告)号：US09171714B2

公开(公告)日：2015-10-27

申请号：US13960236

申请日：2013-08-06

申请人： APPLIED MATERIALS, Inc.

发明人： Glen T. Mori ,  Yueh Sheng Ow

IPC分类号： F26B21/00 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L21/3105 ,  H01L21/67

CPC分类号： H01L21/0206 ,  H01L21/31058 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

摘要翻译： 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 用于对衬底进行脱气的方法可以包括将包含聚合物或环氧树脂的衬底定位在维持在脱气温度和玻璃化转变温度之间的处理室内，将衬底暴露于可变频微波辐射，将衬底暴露于包含惰性的等离子体 气体，从室中除去含氧化合物，提高室中惰性气体的压力，并且在将衬底冷却至低于脱气温度的温度的同时保持惰性气体的压力。

公开(公告)号：US09051655B2

公开(公告)日：2015-06-09

申请号：US14028099

申请日：2013-09-16

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Sang Ho Yu ,  Kie Jin Park ,  Glen T. Mori ,  Joshua Collins

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  C23F4/00 ,  H01J37/32

CPC分类号： C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

摘要： Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

摘要翻译： 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

公开(公告)号：US11289387B2

公开(公告)日：2022-03-29

申请号：US16944285

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： Prayudi Lianto ,  Sik Hin Chi ,  Shih-Chao Hung ,  Pin Gian Gan ,  Ricardo Fujii Vinluan ,  Gaurav Mehta ,  Ramesh Chidambaram ,  Guan Huei See ,  Arvind Sundarrajan ,  Upendra V. Ummethala ,  Wei Hao Kew ,  Muhammad Adli Danish Bin Abdullah ,  Michael Charles Kutney ,  Mark McTaggart Wylie ,  Amulya Ligorio Athayde ,  Glen T. Mori

IPC分类号： H01L21/768 ,  H01L21/66 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/683

摘要： Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

公开(公告)号：US09548200B2

公开(公告)日：2017-01-17

申请号：US14322484

申请日：2014-07-02

申请人： Applied Materials, Inc.

发明人： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC分类号： H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

摘要翻译： 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。