公开(公告)号：US12080522B2

公开(公告)日：2024-09-03

申请号：US16855559

申请日：2020-04-22

申请人： APPLIED MATERIALS, INC.

发明人： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Tai Ming Boh ,  Kang Zhang ,  Yuichi Wada

IPC分类号： H01J37/32

CPC分类号： H01J37/32495 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32651

摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

公开(公告)号：US11913107B2

公开(公告)日：2024-02-27

申请号：US16677891

申请日：2019-11-08

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Yuichi Wada ,  Junqi Wei ,  Kang Zhang ,  Kelvin Boh

IPC分类号： C23C14/16 ,  C23C14/02 ,  H01L23/00 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/021 ,  C23C14/16 ,  H01J37/32082 ,  H01J37/3426 ,  H01L24/03 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L2224/0381 ,  H01L2224/03826

摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

公开(公告)号：US11670513B2

公开(公告)日：2023-06-06

申请号：US17227327

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC分类号： H01L21/02 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

CPC分类号： H01L21/3003 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：USD971167S1

公开(公告)日：2022-11-29

申请号：US29778108

申请日：2021-04-10

申请人： APPLIED MATERIALS, INC.

设计人： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

公开(公告)号：US11881385B2

公开(公告)日：2024-01-23

申请号：US16857828

申请日：2020-04-24

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Yuichi Wada ,  Junqi Wei ,  Kang Zhang ,  Ananthkrishna Jupudi ,  Sarath Babu ,  Kok Seong Teo ,  Kok Wei Tan

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32495 ,  H01J37/32504 ,  H01L21/67028 ,  H01J2237/335

摘要： Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

公开(公告)号：US11375584B2

公开(公告)日：2022-06-28

申请号：US16545901

申请日：2019-08-20

申请人： APPLIED MATERIALS, INC.

发明人： Tuck Foong Koh ,  Yueh Sheng Ow ,  Nuno Yen-Chu Chen ,  Ananthkrishna Jupudi ,  Preetham P. Rao

IPC分类号： H05B1/02 ,  H05B6/80

摘要： Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.

公开(公告)号：USD931241S1

公开(公告)日：2021-09-21

申请号：US29703658

申请日：2019-08-28

申请人： APPLIED MATERIALS, INC.

设计人： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

公开(公告)号：US09171714B2

公开(公告)日：2015-10-27

申请号：US13960236

申请日：2013-08-06

申请人： APPLIED MATERIALS, Inc.

发明人： Glen T. Mori ,  Yueh Sheng Ow

IPC分类号： F26B21/00 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L21/3105 ,  H01L21/67

CPC分类号： H01L21/0206 ,  H01L21/31058 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

摘要翻译： 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 用于对衬底进行脱气的方法可以包括将包含聚合物或环氧树脂的衬底定位在维持在脱气温度和玻璃化转变温度之间的处理室内，将衬底暴露于可变频微波辐射，将衬底暴露于包含惰性的等离子体 气体，从室中除去含氧化合物，提高室中惰性气体的压力，并且在将衬底冷却至低于脱气温度的温度的同时保持惰性气体的压力。

公开(公告)号：US11610807B2

公开(公告)日：2023-03-21

申请号：US17227354

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US11569122B2

公开(公告)日：2023-01-31

申请号：US17217179

申请日：2021-03-30

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.