公开(公告)号：US11929260B2

公开(公告)日：2024-03-12

申请号：US17410958

申请日：2021-08-24

申请人： Applied Materials, Inc.

发明人： Fang Jie Lim ,  Chin Wei Tan ,  Jun-Liang Su ,  Felix Deng ,  Sai Kumar Kodumuri ,  Ananthkrishna Jupudi ,  Nuno Yen-Chu Chen

IPC分类号： H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L21/56 ,  H01L21/563 ,  H01L21/67109 ,  H01L21/67115 ,  H01L24/75 ,  H01L24/83 ,  H01L21/6838 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/73204 ,  H01L2224/75272 ,  H01L2224/7555 ,  H01L2224/75744 ,  H01L2224/75985 ,  H01L2224/75986 ,  H01L2224/83047 ,  H01L2224/83048 ,  H01L2224/8322 ,  H01L2224/8385 ,  H01L2224/83908 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511

摘要： Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

公开(公告)号：US20200206775A1

公开(公告)日：2020-07-02

申请号：US16427723

申请日：2019-05-31

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Yue Cui ,  Arvind Sundarrajan ,  Nuno Yen-Chu Chen ,  Guan Huei See ,  Felix Deng

IPC分类号： B05D3/06

摘要： Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

公开(公告)号：US11610807B2

公开(公告)日：2023-03-21

申请号：US17227354

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US11569122B2

公开(公告)日：2023-01-31

申请号：US17217179

申请日：2021-03-30

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US12048948B2

公开(公告)日：2024-07-30

申请号：US16427723

申请日：2019-05-31

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Yue Cui ,  Arvind Sundarrajan ,  Nuno Yen-Chu Chen ,  Guan Huei See ,  Felix Deng

IPC分类号： B05D3/06 ,  H01L23/00 ,  H01P3/08 ,  H01P11/00

CPC分类号： B05D3/06 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03515 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2924/19031 ,  H01L2924/19032 ,  H01L2924/3511 ,  H01P3/08 ,  H01P11/003

摘要： Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

公开(公告)号：US10991617B2

公开(公告)日：2021-04-27

申请号：US16403796

申请日：2019-05-06

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V Kesapragada ,  Clinton Goh

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.