公开(公告)号：US10991617B2

公开(公告)日：2021-04-27

申请号：US16403796

申请日：2019-05-06

申请人： APPLIED MATERIALS, INC.

发明人： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V Kesapragada ,  Clinton Goh

IPC分类号： H01L21/762 ,  H01L21/67

摘要： Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.