公开(公告)号：US11289387B2

公开(公告)日：2022-03-29

申请号：US16944285

申请日：2020-07-31

申请人： APPLIED MATERIALS, INC.

发明人： Prayudi Lianto ,  Sik Hin Chi ,  Shih-Chao Hung ,  Pin Gian Gan ,  Ricardo Fujii Vinluan ,  Gaurav Mehta ,  Ramesh Chidambaram ,  Guan Huei See ,  Arvind Sundarrajan ,  Upendra V. Ummethala ,  Wei Hao Kew ,  Muhammad Adli Danish Bin Abdullah ,  Michael Charles Kutney ,  Mark McTaggart Wylie ,  Amulya Ligorio Athayde ,  Glen T. Mori

IPC分类号： H01L21/768 ,  H01L21/66 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/683

摘要： Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.