公开(公告)号：US20220230887A1

公开(公告)日：2022-07-21

申请号：US17150280

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Meiyee SHEK ,  Maximillian CLEMONS ,  Srinivas D. NEMANI ,  Nikolaos BEKIARIS ,  Ellie YIEH

IPC: H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes heating a substrate disposed in an interior volume of a process chamber and having a boron-containing film deposited thereon to a predetermined temperature; and supplying water vapor in a non-plasma state to the interior volume at a predetermined pressure for a predetermined time, while maintaining the substrate at the predetermined temperature to anneal the substrate for the predetermined time and remove the boron-containing film.

公开(公告)号：US20190393024A1

公开(公告)日：2019-12-26

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Chentsau YING ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20220301867A1

公开(公告)日：2022-09-22

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro TANNOS ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Joshua Alan RUBNITZ ,  Erica CHEN ,  Soham Sunjay ASRANI ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR.

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US20220298636A1

公开(公告)日：2022-09-22

申请号：US17208735

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Soham Sunjay ASRANI ,  Joshua Alan RUBNITZ ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Erica CHEN ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR. ,  Jethro TANNOS ,  Ellie YIEH

IPC: C23C16/455 ,  C23C16/515 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.

公开(公告)号：US20180358244A1

公开(公告)日：2018-12-13

申请号：US16107845

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC: H01L21/67 ,  H01L21/683 ,  C23C16/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US20180342395A1

公开(公告)日：2018-11-29

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas NEMANI ,  Ellie YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US20220310776A1

公开(公告)日：2022-09-29

申请号：US17210130

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Tony P. CHIANG

IPC: H01L49/02 ,  C23C16/40 ,  C23C14/06 ,  C23C16/455 ,  C23C28/04

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.

公开(公告)号：US20180040476A1

公开(公告)日：2018-02-08

申请号：US15674108

申请日：2017-08-10

Applicant: Applied Materials, Inc.

Inventor： Steven WOLF ,  Mary EDMONDS ,  Andrewe KUMMEL ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/34 ,  H01L29/51 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/342 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/0228 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.

公开(公告)号：US20170229325A1

公开(公告)日：2017-08-10

申请号：US15495832

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US20140083362A1

公开(公告)日：2014-03-27

申请号：US14088008

申请日：2013-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry LUBOMIRSKY ,  Qiwei LIANG ,  Soonam PARK ,  Kien N. CHUC ,  Ellie YIEH

IPC: C23C16/509

CPC classification number: C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

Abstract translation: 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。 顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。 反应性自由基前体可以通过顶部入口提供给沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。