公开(公告)号：US20220230887A1

公开(公告)日：2022-07-21

申请号：US17150280

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Meiyee SHEK ,  Maximillian CLEMONS ,  Srinivas D. NEMANI ,  Nikolaos BEKIARIS ,  Ellie YIEH

IPC: H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes heating a substrate disposed in an interior volume of a process chamber and having a boron-containing film deposited thereon to a predetermined temperature; and supplying water vapor in a non-plasma state to the interior volume at a predetermined pressure for a predetermined time, while maintaining the substrate at the predetermined temperature to anneal the substrate for the predetermined time and remove the boron-containing film.