公开(公告)号：US20240128131A1

公开(公告)日：2024-04-18

申请号：US17966634

申请日：2022-10-14

Applicant: Applied Materials, Inc.

Inventor： Avishay Vaxman ,  Qintao Zhang ,  Jeffrey P. Koch ,  David P. Surdock ,  Wayne R. Swart ,  David J. Lee ,  Samphy Hong ,  Aldrin Bernard Vincent Eddy ,  Daniel G. Deyo

IPC: H01L21/66 ,  G06T7/00 ,  G06T7/80 ,  H04N5/225 ,  H04N5/232

CPC classification number: H01L22/24 ,  G06T7/001 ,  G06T7/80 ,  H01L22/26 ,  H04N5/2256 ,  H04N5/23222 ,  H04N5/23229 ,  G06T2207/30148

Abstract: A camera may capture reflected light from the surface of the wafer during a semiconductor process that adds or removes material from the wafer, such as an etch process. To accurately determine an endpoint for the process, a camera sampling rate and light source intensity may be optimized in the process recipe. Optimizing the light source intensity may include characterizing light intensities that will be reflected from the waiver using an image of the wafer. Pixel intensities may be used to adjust the light source intensity to compensate for more complex wafer patterns. Optimizing the camera sampling rates may include nondestructively rotating a view of the wafer and converting the sampled intensities to the frequency domain. The camera sampling rate may be increased or decreased to remove spatial noise from the image without oversampling unnecessarily. These optimized parameters may then generate a clean, repeatable trace for endpoint determination.

公开(公告)号：US20150348925A1

公开(公告)日：2015-12-03

申请号：US14725242

申请日：2015-05-29

Applicant: APPLIED Materials, Inc.

Inventor： David P. Surdock ,  Marvin L. Bernt

IPC: H01L23/00

CPC classification number: H01L24/13 ,  C23F1/26 ,  C23F1/38 ,  H01L21/4846 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02321 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05609 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/11005 ,  H01L2224/11013 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11831 ,  H01L2224/13006 ,  H01L2224/13018 ,  H01L2224/13027 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13666 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2224/0231 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/00012

Abstract: In accordance with one embodiment of the present disclosure, a method of forming a metal feature includes etching a portion of a first metal layer using a first etching chemistry, and etching a portion of a barrier layer using a second etching chemistry to achieve a barrier layer undercut of less than or equal to 2 times the thickness of the barrier layer.

Abstract translation: 根据本公开的一个实施例，形成金属特征的方法包括使用第一蚀刻化学法蚀刻第一金属层的一部分，并且使用第二蚀刻化学法蚀刻阻挡层的一部分以实现阻挡层 底切小于或等于阻挡层厚度的2倍。

公开(公告)号：US20230065641A1

公开(公告)日：2023-03-02

申请号：US17984201

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Jeffrey Chi Cheung ,  John Ghekiere ,  Jerry D. Leonhard ,  David P. Surdock ,  Benjamin Shafer ,  Ray Young

IPC: H01L21/67 ,  H01L21/66

Abstract: A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

公开(公告)号：US11501986B2

公开(公告)日：2022-11-15

申请号：US15587840

申请日：2017-05-05

Applicant: Applied Materials, Inc

Inventor： Jeffrey Chi Cheung ,  John Ghekiere ,  Jerry D. Leonhard ,  David P. Surdock ,  Benjamin Shafer ,  Ray Young

IPC: H01L21/67 ,  H01L21/66

Abstract: A substrate etching system includes a support to hold a wafer in a face-up orientation, a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer, and a monitoring system comprising a probe movable laterally across the wafer on the support.

公开(公告)号：US11673830B2

公开(公告)日：2023-06-13

申请号：US17095417

申请日：2020-11-11

Applicant: APPLIED Materials, Inc.

Inventor： Eric J. Bergman ,  David P. Surdock ,  Graeme Bell

IPC: C03C23/00 ,  H01L21/673

CPC classification number: C03C23/0075 ,  H01L21/673

Abstract: In a method for removing an organic adhesive from a glass carrier in a semiconductor manufacturing process, the glass carrier is placed into a process chamber. The glass carrier is rotated and heated sulfuric acid is applied or sprayed onto the glass carrier. Ozone is introduced into the process chamber. The ozone diffuses through the sulfuric acid to the organic adhesive on the surface of the glass carrier. The sulfuric acid and the ozone chemically react with the organic adhesive and remove it from the glass carrier.

公开(公告)号：US20220144699A1

公开(公告)日：2022-05-12

申请号：US17095417

申请日：2020-11-11

Applicant: APPLIED Materials, Inc.

Inventor： Eric J. Bergman ,  David P. Surdock ,  Graeme Bell

IPC: C03C23/00 ,  H01L21/673

Abstract: In a method for removing an organic adhesive from a glass carrier in a semiconductor manufacturing process, the glass carrier is placed into a process chamber. The glass carrier is rotated and heated sulfuric acid is applied or sprayed onto the glass carrier. Ozone is introduced into the process chamber. The ozone diffuses through the sulfuric acid to the organic adhesive on the surface of the glass carrier. The sulfuric acid and the ozone chemically react with the organic adhesive and remove it from the glass carrier.