公开(公告)号：US11948796B2

公开(公告)日：2024-04-02

申请号：US17616131

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau Huang ,  Chen-Ying Wu ,  Abhishek Dube ,  Chia Cheng Chin ,  Saurabh Chopra

IPC: C30B25/10 ,  C23C16/06 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L21/02636 ,  C23C16/06 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/823418 ,  H01L29/0847 ,  H01L21/02381 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/823431 ,  H01L29/785

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

公开(公告)号：US20220172989A1

公开(公告)日：2022-06-02

申请号：US17672296

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US11289374B2

公开(公告)日：2022-03-29

申请号：US16467669

申请日：2017-11-29

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US20200027738A1

公开(公告)日：2020-01-23

申请号：US16588235

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US10854461B2

公开(公告)日：2020-12-01

申请号：US16588235

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota ,  Kelvin Chan

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US10468263B2

公开(公告)日：2019-11-05

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US10854511B2

公开(公告)日：2020-12-01

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/336 ,  H01L21/768 ,  H01L21/28 ,  H01L21/763 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  G11C8/14

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180350606A1

公开(公告)日：2018-12-06

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/28 ,  H01L21/763 ,  H01L21/768

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US20180247821A1

公开(公告)日：2018-08-30

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28568 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.