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1.发明授权公开(公告)号：US08845163B2
公开(公告)日：2014-09-30
申请号：US13588750
申请日：2012-08-17
IPC分类号： F21V5/04
CPC分类号： G03F7/201 , G03F7/70391 , H01L25/0753 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/−2%.
摘要翻译： 公开了一种具有高收集效率的基于LED的光刻照明器。 照明器利用一系列LED，其中每个LED具有LED管芯和散热器。 将LED管芯成像到均质棒的输入端上，以基本上覆盖输入端，而不包括LED的非发光散热片部分。 使用微透镜阵列对LED管芯进行成像。 照明器的收集效率优于50％，光均质器输出端的照明均匀度在+/- 2％以内。
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公开(公告)号：US08823921B2
公开(公告)日：2014-09-02
申请号：US13199112
申请日：2011-08-19
CPC分类号： G03F7/70066 , G02B26/0833 , G03F7/70558
摘要： A programmable illuminator for a photolithography system includes a light source, a first optical system having a light uniformizing element, a programmable micro-mirror device, and a second optical system that forms an illumination field that illuminates a reticle. The programmable micro-mirror device can be configured to perform shutter and edge-exposure-blocking functions that have previously required relatively large mechanical devices. Methods of improving illumination field uniformity using the programmable illuminator are also disclosed.
摘要翻译： 用于光刻系统的可编程照明器包括光源，具有光均化元件的第一光学系统，可编程微镜器件以及形成照明光栅的照明场的第二光学系统。 可编程微镜装置可以被配置为执行先前需要相对大的机械装置的快门和边缘曝光阻挡功能。 还公开了使用可编程照明器改善照明场均匀性的方法。
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3.发明授权Systems for and methods of laser-enhanced plasma processing of semiconductor materials 有权半导体材料激光等离子体加工的系统和方法公开(公告)号：US08796151B2
公开(公告)日：2014-08-05
申请号：US13438865
申请日：2012-04-04
IPC分类号： H01L21/302
CPC分类号： H01J37/32339 , H01J37/32082 , H01L21/02046 , H01L21/268 , H01L21/3065 , H01L21/67115
摘要： Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.
摘要翻译： 公开了半导体材料的激光增强等离子体处理的系统和方法。 该方法包括将半导体材料支撑在处理室内部并对半导体材料进行等离子体处理。 该方法还包括通过处理室中的窗口同时用激光束加热晶片表面以增加等离子体处理的反应速率。 其他方法包括在等离子体处理之前或之后对半导体材料进行激光加热，但半导体材料位于相同的室内。
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公开(公告)号：US20140057457A1
公开(公告)日：2014-02-27
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L21/02
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译： 公开了薄半导体晶片的退火方法。 该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。
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公开(公告)号：US20090114630A1
公开(公告)日：2009-05-07
申请号：US11982788
申请日：2007-11-05
申请人： Andrew M. Hawryluk
发明人： Andrew M. Hawryluk
CPC分类号： H01L21/268 , B23K26/0738 , B23K26/0853 , B23K26/352 , B23K26/354 , B23K2101/40 , H01L21/28044
摘要： Apparatuses and methods are provided for processing a surface of a substrate. The substrate may have a surface pattern that exhibits directionally and/or orientationally different reflectivities relative to radiation of a selected wavelength and polarization. The apparatus may include a radiation source that emits a photonic beam of the selected wavelength and polarization directed toward the surface at orientation angle and incidence angle selected to substantially minimize substrate surface reflectivity variations and/or minimize the maximum substrate surface reflectivity during scanning. Also provided are methods and apparatuses for selecting an optimal orientation and/or incidence angle for processing a surface of a substrate.
摘要翻译： 提供了用于处理基底表面的装置和方法。 衬底可以具有相对于所选波长和偏振的辐射呈现方向和/或取向不同的反射率的表面图案。 该装置可以包括发射所选波长的光子束的辐射源，并且以定向角和入射角定位朝向表面的极化，其被选择为基本上最小化衬底表面反射率变化和/或最小化扫描期间的最大衬底表面反射率。 还提供了用于选择用于处理衬底的表面的最佳取向和/或入射角的方法和装置。
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公开(公告)号：US20080157802A1
公开(公告)日：2008-07-03
申请号：US12047275
申请日：2008-03-12
IPC分类号： G01R31/312
CPC分类号： G02F1/1309 , G09G3/006
摘要： Each sensor of a linear array of sensors includes, in part, a sensing electrode and an associated feedback circuit. The sensing electrodes are adapted to be brought in proximity to a flat panel having formed thereon a multitude of pixel electrodes in order to capacitively measure the voltage of the pixel electrodes. Each feedback circuit is adapted to actively drive its associated electrode via a feedback signal so as to maintain the voltage of its associated electrode at a substantially fixed bias. Each feedback circuit may include an amplifier having a first input terminal coupled to the sensing electrode and a second input terminal coupled to receive a biasing voltage. The output signal of the amplification circuit is used to generate the feedback signal that actively drives the sensing electrode. The biasing voltage may be the ground potential.
摘要翻译： 传感器的线性阵列的每个传感器部分地包括感测电极和相关联的反馈电路。 感测电极适于接近其上形成有多个像素电极的平板，以便电容地测量像素电极的电压。 每个反馈电路适于经由反馈信号主动驱动其相关联的电极，以便将其相关电极的电压维持在基本上固定的偏压。 每个反馈电路可以包括具有耦合到感测电极的第一输入端和耦合以接收偏置电压的第二输入端的放大器。 放大电路的输出信号用于产生主动驱动感测电极的反馈信号。 偏置电压可能是地电位。
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7.发明授权公开(公告)号：US06531681B1
公开(公告)日：2003-03-11
申请号：US09536869
申请日：2000-03-27
IPC分类号： B23K2606
CPC分类号： G03F7/70558 , B23K26/0738 , G03F7/70225 , G03F7/70391 , H01L21/67115
摘要： Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.
摘要翻译： 辐射能量线源（例如，激光二极管阵列）和变形继电器从其接收辐射能，并将能量引导到相对均匀的线图像中的衬底。 相对于基板扫描线图像以进行处理。 即使线源不均匀，也能提供良好的均匀性。 可选地，定位在变形继电器焦平面中的孔径和随后的成像继电器可包括允许基板暴露在条带之间，其中在电路之间的划线内的相邻条带之间具有边界。 可以使用具有预定图案的变形继电器焦平面掩模来限定待用基板的部分，并且掩模扫描运动彼此同步。 源极输出的控制和基板的位置/速度相对于线图像，允许在衬底上均匀的剂量和所需的幅度。
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公开(公告)号：US6002553A
公开(公告)日：1999-12-14
申请号：US202991
申请日：1994-02-28
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/325 , H01F10/3281 , G11B2005/3996 , G11B5/09
摘要： A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.
摘要翻译： 具有三维微架构的磁阻传感器元件能够显着改善磁场的灵敏度和高度局部化的测量。 传感器由交替磁性和非磁性材料的多层膜形成。 传感器在垂直于平面模式的电流中最佳运行。 该传感器可用于磁读/写磁头，用于高密度磁信息存储和检索。
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公开(公告)号：US5257132A
公开(公告)日：1993-10-26
申请号：US683592
申请日：1991-04-09
IPC分类号： G02B5/18
CPC分类号： G02B5/1876 , G02B5/188
摘要： A broadband diffractive lens or imaging element produces a sharp focus and/or a high resolution image with broad bandwidth illuminating radiation. The diffractive lens is sectored or segmented into regions, each of which focuses or images a distinct narrowband of radiation but all of which have a common focal length. Alternatively, a serial stack of minus filters, each with a diffraction pattern which focuses or images a distinct narrowband of radiation but all of which have a common focal length, is used. The two approaches can be combined. Multifocal broadband diffractive elements can also be formed. Thin film embodiments are described.
摘要翻译： 宽带衍射透镜或成像元件产生具有宽带宽照明辐射的清晰焦点和/或高分辨率图像。 衍射透镜被分割或分割成各个区域，每个区域聚焦或成像不同的辐射窄带，但都具有共同的焦距。 或者，使用负滤波器的串联堆叠，每个具有聚焦或图像不同的辐射窄带的衍射图案，但都具有共同的焦距。 这两种方法可以组合。 也可以形成多焦点宽带衍射元件。 描述薄膜实施例。
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公开(公告)号：US09190570B2
公开(公告)日：2015-11-17
申请号：US13678946
申请日：2012-11-16
申请人： Andrew M. Hawryluk , Yun Wang
发明人： Andrew M. Hawryluk , Yun Wang
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L33/32 , H01L33/38 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/0095 , H01L33/38
摘要： The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
摘要翻译： 本发明涉及具有减小的图案效应的GaN发光二极管（LED）的激光退火。 一种方法包括在GaN LED结构的n-GaN层或p-GaN层顶上形成细长的导电结构，细长的导电结构具有长和短的尺寸，并且在长尺寸上间隔开并基本对准。 该方法还包括产生具有大于短尺寸的退火波长的P偏振退火激光束。 该方法还包括通过具有P偏振退火激光束的导电结构照射GaN LED结构的n-GaN层或p-GaN层，包括相对于导电结构引导退火激光束使得极化 方向垂直于导电结构的长尺寸。
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