公开(公告)号：US10421766B2

公开(公告)日：2019-09-24

申请号：US15017913

申请日：2016-02-08

Applicant: Air Products and Chemicals, Inc.

Inventor： Daniel P. Spence ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Manchao Xiao ,  Jianheng Li

IPC: C07F7/10 ,  C07F7/18 ,  C01B21/082 ,  C01B33/18 ,  C23C16/30 ,  C23C16/455 ,  C01B32/90 ,  C09D7/63 ,  C08L83/04 ,  C09D4/00 ,  C09D183/08 ,  C08G77/26

Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6  I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.

公开(公告)号：US10319584B2

公开(公告)日：2019-06-11

申请号：US15233018

申请日：2016-08-10

Applicant: Air Products and Chemicals, Inc.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Jospeh Karwacki, Jr. ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C07F7/10 ,  C07F7/08 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C09D7/63

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US09978585B2

公开(公告)日：2018-05-22

申请号：US13902375

申请日：2013-05-24

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C07F7/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C07F7/025 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45553

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.

公开(公告)号：US09613799B2

公开(公告)日：2017-04-04

申请号：US15073899

申请日：2016-03-18

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F7/02 ,  C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20160203975A1

公开(公告)日：2016-07-14

申请号：US15073899

申请日：2016-03-18

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C07F7/02 ,  C09D1/00

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract translation: 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US20160122869A1

公开(公告)日：2016-05-05

申请号：US14924098

申请日：2015-10-27

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Xinjian Lei ,  Anupama Mallikarjunan ,  Matthew R. MacDonald ,  Manchao Xiao

IPC: C23C16/32 ,  C23C16/36 ,  C23C16/34

CPC classification number: C23C16/325 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45553

Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain

Abstract translation: 本文公开了含硅基膜及其组合物及其形成方法。 硅基膜含有<50原子％的硅。 在一个方面，硅基膜具有组成SixCyNz，其中x为约0至约55，y为约35至约100，z为约0至约50原子量（wt。）百分比（％） 由XPS。 在另一方面，使用至少一种包含两个硅原子，至少一个Si-Me基团和硅原子之间的乙烯或丙烯键的有机硅前体如1,4-二硅烷戊烷沉积硅基膜。

公开(公告)号：US09233990B2

公开(公告)日：2016-01-12

申请号：US14625158

申请日：2015-02-18

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Richard Ho ,  Xinjian Lei

IPC: C07F7/10 ,  C07F7/02

CPC classification number: C07F7/025 ,  C07F7/10

Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.

Abstract translation: 有机氨基硅烷，例如但不限于二异丙基氨基硅烷（DIPAS），是用于沉积含硅膜，例如氧化硅和氮化硅膜的前体。 本文描述的是通过包含氢硅烷的硅源通过亚胺的催化氢化硅烷化制备有机氨基硅烷化合物或其它化合物如有机氨基二硅烷和有机氨基碳硅烷的方法。

公开(公告)号：US09200167B2

公开(公告)日：2015-12-01

申请号：US13745102

申请日：2013-01-18

Applicant: Air Products and Chemicals, Inc.

Inventor： Daniel P. Spence ,  Ronald Martin Pearlstein ,  Xinjian Lei ,  Manchao Xiao ,  Richard Ho ,  Mark Leonard O'Neill ,  Haripin Chandra

IPC: C09D7/12 ,  C07F7/10 ,  C07F7/18

CPC classification number: C09D7/1233 ,  C07F7/10 ,  C07F7/188 ,  C09D7/63

Abstract: Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5  Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.

Abstract translation: 本文描述了具有式I的烷氧基氨基硅烷化合物，以及用于沉积含硅膜的方法和组合物：（R1R2）NSiR3OR4OR5其中R1独立地选自直链或支链C1至C10烷基的式（I） C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基; R2和R3各自独立地选自氢; 直链或支链C1至C10烷基; C3至C12烯基，C3至C12炔基，C4至C10环烷基和C6至C10芳基; 并且R 4和R 5各自独立地选自直链或支链C 1至C 10烷基; C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基。

公开(公告)号：US08940648B2

公开(公告)日：2015-01-27

申请号：US13964658

申请日：2013-08-12

Applicant: Air Products and Chemicals, Inc.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

IPC: H01L21/31 ,  H01L21/02 ,  C07F7/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC classification number: H01L21/02211 ,  C07F7/025 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633

Abstract: A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.

Abstract translation: 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH2），链，环，C3-C10支链烷基，SiR2或SiH2。

公开(公告)号：US20140024173A1

公开(公告)日：2014-01-23

申请号：US14032985

申请日：2013-09-20

Applicant: Air Products and Chemicals, Inc.

Inventor： Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

IPC: H01L21/06

CPC classification number: H01L21/06 ,  C23C18/1204 ,  C23C18/1225 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0322 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  Y02E10/541

Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。