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    High temperature atomic layer deposition of silicon oxide thin films
    1.
    发明授权
    High temperature atomic layer deposition of silicon oxide thin films 有权

    公开(公告)号：US10242864B2

    公开(公告)日：2019-03-26

    申请号：US15248214

    申请日：2016-08-26

    Applicant: Air Products and Chemicals, Inc.

    Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill ,  Bing Han

    IPC: C23C16/00 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10

    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp  I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp  II. wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.

    ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME
    5.
    发明申请
    ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME 审中-公开
    有机氨基硅烷衍生物及其沉积膜的方法

    公开(公告)号：US20150087139A1

    公开(公告)日：2015-03-26

    申请号：US14483751

    申请日：2014-09-11

    Applicant: AIR PRODUCTS AND CHEMICALS, INC.

    Inventor： Mark Leonard O'Neill ,  Manchao Xiao ,  Xinjian Lei ,  Richard Ho ,  Haripin Chandra ,  Matthew R. MacDonald ,  Meiliang Wang

    IPC: H01L21/02 ,  C07F7/10

    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

    Abstract translation: 这里描述的是用于形成含硅膜的前体和方法。 在一个方面，前体包含由以下下列通式A至E之一表示的化合物：在一个具体实施方案中，有机氨基硅烷前体对于低温（例如350℃或更低），原子层沉积（ALD） ）或等离子体增强的原子层沉积（PEALD）。 此外，本文描述的是包含本文所述的有机氨基硅烷的组合物，其中有机氨基硅烷基本上不含选自胺，卤化物（例如Cl，F，I，Br），较高分子量物质和痕量金属中的至少一种。

    BARRIER MATERIALS FOR DISPLAY DEVICES
    6.
    发明申请
    BARRIER MATERIALS FOR DISPLAY DEVICES 审中-公开
    用于显示设备的障碍物

    公开(公告)号：US20150021599A1

    公开(公告)日：2015-01-22

    申请号：US14383723

    申请日：2013-03-08

    Applicant: AIR PRODUCTS AND CHEMICALS, INC,

    Inventor： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

    CPC classification number: H01L29/78693 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/6675

    Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

    Abstract translation: 本文描述的是包括一个或多个含硅层和金属氧化物层的装置。 本文还描述了用于形成一个或多个待使用的含硅层的方法，例如作为显示装置中的钝化层。 在一个具体方面，该装置包括透明金属氧化物层，氧化硅层和氮化硅层。 在这个或其它方面，该装置在350℃或更低的温度下沉积。 本文所述的含硅层包含以下特性中的一种或多种：约1.9g / cm 3或更大的密度; 约4×1022cm-3或更低的氢含量，以及通过紫外 - 可见光光谱仪测量的400-700nm的透明度为约90％以上。

    Dielectric Films Comprising Silicon And Methods For Making Same
    7.
    发明申请
    Dielectric Films Comprising Silicon And Methods For Making Same 审中-公开
    包含硅的介质膜和制造相同的方法

    公开(公告)号：US20140183706A1

    公开(公告)日：2014-07-03

    申请号：US14204577

    申请日：2014-03-11

    Applicant: AIR PRODUCTS AND CHEMICALS, INC.

    Inventor： Liu Yang ,  Manchao Xiao ,  Kirk Scott Cuthill ,  Bing Han ,  Mark Leonard O'Neill

    IPC: H01L21/02

    CPC classification number: H01L21/02164 ,  C23C16/30 ,  C23C16/308 ,  C23C16/401 ,  H01L21/0228

    Abstract: Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

    Abstract translation: 这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数 为6.0或更低，和/或可承受高温快速热退火工艺。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

    Chemical Mechanical Polishing (CMP) of Colbalt-Containing Substrate
    9.
    发明申请
    Chemical Mechanical Polishing (CMP) of Colbalt-Containing Substrate 审中-公开
    含有金属基质的化学机械抛光（CMP）

    公开(公告)号：US20160027657A1

    公开(公告)日：2016-01-28

    申请号：US14800323

    申请日：2015-07-15

    Applicant: AIR PRODUCTS AND CHEMICALS, INC.

    Inventor： Xiaobo Shi ,  James Allen Schlueter ,  Mark Leonard O'Neill

    IPC: H01L21/311 ,  C09G1/02

    CPC classification number: H01L21/31111 ,  C09G1/02

    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.

    Abstract translation: 提供了用于抛光含钴或钴的基材的化学机械抛光（CMP）组合物，方法和系统。 在CMP抛光组合物中使用双重或至少两种螯合剂作为络合剂，用于实现独特的协同效应，以提供高的Co，可调谐的Co去除率和在Co膜表面具有低静态蚀刻速率，以便在CMP过程中实现有效的Co腐蚀保护 。 钴化学机械抛光组合物还提供非常高的Co膜与Ta，TaN，Ti和TiN等其它阻挡层的选择性，以及介电膜，如TEOS，SiNx，low-k和超低k 电影。

    Methods for Depositing Silicon Nitride Films
    10.
    发明申请
    Methods for Depositing Silicon Nitride Films 有权
    沉积氮化硅薄膜的方法

    公开(公告)号：US20150099375A1

    公开(公告)日：2015-04-09

    申请号：US14498044

    申请日：2014-09-26

    Applicant: AIR PRODUCTS AND CHEMICALS, INC.

    Inventor： Chandra Haripin ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Moo-Sung Kim ,  Kirk Scott Cuthill ,  Mark Leonard O'Neill

    IPC: H01L21/02

    CPC classification number: H01L21/0217 ,  C07F7/10 ,  C23C14/027 ,  C23C14/548 ,  C23C16/18 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/45553 ,  C23C28/42 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

    Abstract: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

    Abstract translation: 这里描述了形成氮化硅膜的方法。 在一个方面，提供一种形成氮化硅膜的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种本文所述的至少一种具有至少一个SiH 3基团的有机氨基硅烷，其中所述至少一种有机氨基硅烷在所述基材的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 将包含氮气和惰性气体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中以约0.01至约1.5W / cm 2的功率密度产生等离子体。

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