公开(公告)号：US20150021599A1

公开(公告)日：2015-01-22

申请号：US14383723

申请日：2013-03-08

申请人： AIR PRODUCTS AND CHEMICALS, INC,

发明人： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

CPC分类号： H01L29/78693 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/6675

摘要： Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

摘要翻译： 本文描述的是包括一个或多个含硅层和金属氧化物层的装置。 本文还描述了用于形成一个或多个待使用的含硅层的方法，例如作为显示装置中的钝化层。 在一个具体方面，该装置包括透明金属氧化物层，氧化硅层和氮化硅层。 在这个或其它方面，该装置在350℃或更低的温度下沉积。 本文所述的含硅层包含以下特性中的一种或多种：约1.9g / cm 3或更大的密度; 约4×1022cm-3或更低的氢含量，以及通过紫外 - 可见光光谱仪测量的400-700nm的透明度为约90％以上。

公开(公告)号：US10354860B2

公开(公告)日：2019-07-16

申请号：US14871233

申请日：2015-09-30

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Jianheng Li ,  Robert Gordon Ridgeway ,  Xinjian Lei ,  Raymond Nicholas Vrtis ,  Bing Han ,  Madhukar Bhaskara Rao

IPC分类号： H01L21/02 ,  C07F7/02 ,  C23C16/34 ,  C23C16/40 ,  C01B21/087 ,  C07F7/10 ,  H01L27/11517 ,  H01L27/11556 ,  H01L27/11563 ,  H01L27/11582

摘要： Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

公开(公告)号：US10319862B2

公开(公告)日：2019-06-11

申请号：US14383723

申请日：2013-03-08

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

IPC分类号： C23C16/34 ,  C23C16/40 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

摘要： Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

公开(公告)号：US20160225616A1

公开(公告)日：2016-08-04

申请号：US14871233

申请日：2015-09-30

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Jianheng Li ,  Robert Gordon Ridgeway ,  Xinjian Lei ,  Raymond Nicholas Vrtis ,  Bing Han ,  Madhukar Bhaskara Rao

IPC分类号： H01L21/02 ,  H01L27/115 ,  C01B21/087 ,  C07F7/10

CPC分类号： H01L21/02219 ,  C01B21/087 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L27/11517 ,  H01L27/11556 ,  H01L27/11563 ,  H01L27/11582

摘要： Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

摘要翻译： 这里描述的是包括多个含硅层的装置，其中含硅层选自氧化硅和氮化硅层或膜。 这里还描述了用于形成要用于例如3D垂直NAND闪存堆栈的装置的方法。 在一个特定方面或装置中，氧化硅层包含略微压缩应力和良好的热稳定性。 在该装置的这个或其它方面，氮化硅层在高达约800℃的热处理之后包含轻微的拉伸应力和小于300MPa的应力变化。 在该装置的这个或其他方面，氮化硅层比热的H3PO4中的氧化硅层蚀刻得快得多，显示出良好的蚀刻选择性。

公开(公告)号：US09922818B2

公开(公告)日：2018-03-20

申请号：US14732250

申请日：2015-06-05

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Raymond Nicholas Vrtis ,  Robert Gordon Ridgeway ,  Jianheng Li ,  William Robert Entley ,  Jennifer Lynn Anne Achtyl ,  Xinjian Lei

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01B3/18 ,  C23C16/30 ,  C23C16/56

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/56 ,  H01B3/18 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02348

摘要： A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

公开(公告)号：US20160049293A1

公开(公告)日：2016-02-18

申请号：US14820982

申请日：2015-08-07

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Jianheng Li ,  Raymond Nicholas Vrtis ,  Robert Gordon Ridgeway ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Xuezhong Jiang

IPC分类号： H01L21/02

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

摘要： Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.

摘要翻译： 本文描述了一种包含其的方法和组合物，用于通过在本文中称为孔密封层的至少一个表面上提供另外的薄电介质膜来密封多孔低介电常数（“低k”）层的孔 多孔，低k层，以防止下层的介电常数进一步损失。 一方面，所述方法包括：使多孔低介电常数膜与至少一种有机硅化合物接触以提供吸收的有机硅化合物，并用紫外光，等离子体或两者处理所吸收的有机硅化合物，并重复直至所需厚度的 形成孔密封层。

公开(公告)号：US20150364321A1

公开(公告)日：2015-12-17

申请号：US14732250

申请日：2015-06-05

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Raymond Nicholas Vrtis ,  Robert Gordon Ridgeway ,  Jianheng Li ,  William Robert Entley ,  Jennifer Lynn Anne Achtyl ,  Xinjian Lei

IPC分类号： H01L21/02 ,  H01B3/18

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/56 ,  H01B3/18 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02348

摘要： A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

摘要翻译： 提供了一种通过化学气相沉积制造多孔低k电介质膜的方法和组合物。 一方面，该方法包括以下步骤：在反应室内提供衬底; 将包含至少一种包含烷基 - 烷氧基硅烷化合物的结构形成前体和致孔剂的气态试剂引入反应室; 向反应室中的气态试剂施加能量以诱导气态试剂在基材上沉积初步膜的反应，其中预备薄膜含有致孔剂，并沉积预备薄膜; 并且从初步膜中除去其中所含的致孔剂的至少一部分，并为膜提供2.7或更小的孔隙和介电常数。 在某些实施方案中，结构形成前体还包含硬化添加剂。