公开(公告)号：US09905415B2

公开(公告)日：2018-02-27

申请号：US14498044

申请日：2014-09-26

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Haripin Chandra ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Moo-Sung Kim ,  Kirk Scott Cuthill ,  Mark Leonard O'Neill

IPC: C23C16/34 ,  H01L21/02 ,  C07F7/10 ,  C23C16/18 ,  C23C16/455 ,  C23C14/02 ,  C23C14/54 ,  C23C28/00

CPC classification number: H01L21/0217 ,  C07F7/10 ,  C23C14/027 ,  C23C14/548 ,  C23C16/18 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/45553 ,  C23C28/42 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

公开(公告)号：US20150024608A1

公开(公告)日：2015-01-22

申请号：US14511719

申请日：2014-10-10

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract translation: 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US20150021599A1

公开(公告)日：2015-01-22

申请号：US14383723

申请日：2013-03-08

Applicant: AIR PRODUCTS AND CHEMICALS, INC,

Inventor： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/78693 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/6675

Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

Abstract translation: 本文描述的是包括一个或多个含硅层和金属氧化物层的装置。 本文还描述了用于形成一个或多个待使用的含硅层的方法，例如作为显示装置中的钝化层。 在一个具体方面，该装置包括透明金属氧化物层，氧化硅层和氮化硅层。 在这个或其它方面，该装置在350℃或更低的温度下沉积。 本文所述的含硅层包含以下特性中的一种或多种：约1.9g / cm 3或更大的密度; 约4×1022cm-3或更低的氢含量，以及通过紫外 - 可见光光谱仪测量的400-700nm的透明度为约90％以上。

公开(公告)号：US09613799B2

公开(公告)日：2017-04-04

申请号：US15073899

申请日：2016-03-18

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F7/02 ,  C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20160203975A1

公开(公告)日：2016-07-14

申请号：US15073899

申请日：2016-03-18

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C07F7/02 ,  C09D1/00

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Abstract translation: 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

公开(公告)号：US20160122869A1

公开(公告)日：2016-05-05

申请号：US14924098

申请日：2015-10-27

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Xinjian Lei ,  Anupama Mallikarjunan ,  Matthew R. MacDonald ,  Manchao Xiao

IPC: C23C16/32 ,  C23C16/36 ,  C23C16/34

CPC classification number: C23C16/325 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45553

Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain

Abstract translation: 本文公开了含硅基膜及其组合物及其形成方法。 硅基膜含有<50原子％的硅。 在一个方面，硅基膜具有组成SixCyNz，其中x为约0至约55，y为约35至约100，z为约0至约50原子量（wt。）百分比（％） 由XPS。 在另一方面，使用至少一种包含两个硅原子，至少一个Si-Me基团和硅原子之间的乙烯或丙烯键的有机硅前体如1,4-二硅烷戊烷沉积硅基膜。

公开(公告)号：US10319862B2

公开(公告)日：2019-06-11

申请号：US14383723

申请日：2013-03-08

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

IPC: C23C16/34 ,  C23C16/40 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

公开(公告)号：US09627193B2

公开(公告)日：2017-04-18

申请号：US14511719

申请日：2014-10-10

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: C07F7/02 ,  H01L21/02 ,  C09D1/00 ,  C07F7/10 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20150099375A1

公开(公告)日：2015-04-09

申请号：US14498044

申请日：2014-09-26

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Chandra Haripin ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Moo-Sung Kim ,  Kirk Scott Cuthill ,  Mark Leonard O'Neill

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C07F7/10 ,  C23C14/027 ,  C23C14/548 ,  C23C16/18 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/45553 ,  C23C28/42 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

Abstract translation: 这里描述了形成氮化硅膜的方法。 在一个方面，提供一种形成氮化硅膜的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种本文所述的至少一种具有至少一个SiH 3基团的有机氨基硅烷，其中所述至少一种有机氨基硅烷在所述基材的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 将包含氮气和惰性气体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中以约0.01至约1.5W / cm 2的功率密度产生等离子体。

公开(公告)号：US09879340B2

公开(公告)日：2018-01-30

申请号：US14924098

申请日：2015-10-27

Applicant: AIR PRODUCTS AND CHEMICALS, INC.

Inventor： Xinjian Lei ,  Anupama Mallikarjunan ,  Matthew R. MacDonald ,  Manchao Xiao

IPC: C23C16/32 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

CPC classification number: C23C16/325 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45553

Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain