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    Method and Apparatus for Removing Contaminants from Nitrogen Trifluoride
    2.
    发明申请
    Method and Apparatus for Removing Contaminants from Nitrogen Trifluoride 审中-公开
    从三氟化氮中去除污染物的方法和装置

    公开(公告)号：US20130341178A1

    公开(公告)日：2013-12-26

    申请号：US13913069

    申请日：2013-06-07

    申请人： AIR PRODUCTS AND CHEMICALS INC.

    发明人： Andrew David Johnson ,  John Giles Langan

    IPC分类号： B01D53/00

    CPC分类号： B01D53/007 ,  C01B21/0837 ,  C01P2002/82 ,  C01P2006/80

    摘要： A highly pure nitrogen fluoride process fluid having an impurity content of 10 ppm or less can be effectively obtained by using radiation to cause the dissociation of chemical bonds in the impurity to form dissociation products and thereby make the removal of the dissociation products from the process fluid easier than the removal of the impurity from the process fluid.

    摘要翻译： 通过使用辐射使杂质中的化学键解离以形成解离产物，从而使离解产物从工艺流体中除去，可以有效地获得杂质含量为10ppm以下的高纯氮氟化物工艺流体 比从工艺流体去除杂质更容易。

    Methods of forming non-oxygen containing silicon-based films
    3.
    发明授权
    Methods of forming non-oxygen containing silicon-based films 有权
    形成非含氧硅基膜的方法

    公开(公告)号：US09243324B2

    公开(公告)日：2016-01-26

    申请号：US13949420

    申请日：2013-07-24

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Heather Regina Bowen ,  Jianheng Li ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Andrew David Johnson ,  Xinjian Lei

    IPC分类号： C23C16/30 ,  C23C16/32 ,  C23C16/36

    CPC分类号： C23C16/30 ,  C23C16/325 ,  C23C16/36

    摘要： Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.

    摘要翻译： 本文提供了含有> 50原子％的硅的形成非含氧硅基膜的方法。 在一个方面，硅基膜具有组成SixCyNz，其中x为约51〜100，y为0〜49，z为通过XPS测定的0〜50原子％（重量）％（％）。 在一个实施方案中，使用至少一种具有至少两个SiH 3基团的有机硅前体沉积非氧硅基膜，在硅原子之间具有至少一个C2-3键，例如1,4-二硅烷。

    BARRIER MATERIALS FOR DISPLAY DEVICES
    5.
    发明申请
    BARRIER MATERIALS FOR DISPLAY DEVICES 审中-公开
    用于显示设备的障碍物

    公开(公告)号：US20150021599A1

    公开(公告)日：2015-01-22

    申请号：US14383723

    申请日：2013-03-08

    申请人： AIR PRODUCTS AND CHEMICALS, INC,

    发明人： Robert Gordon Ridgeway ,  Andrew David Johnson ,  Anupama Mallikarjunan ,  Raymond Nicholas Vrtis ,  Xinjian Lei ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Jianheng Li ,  Michael T. Savo

    IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

    CPC分类号： H01L29/78693 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/6675

    摘要： Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

    摘要翻译： 本文描述的是包括一个或多个含硅层和金属氧化物层的装置。 本文还描述了用于形成一个或多个待使用的含硅层的方法，例如作为显示装置中的钝化层。 在一个具体方面，该装置包括透明金属氧化物层，氧化硅层和氮化硅层。 在这个或其它方面，该装置在350℃或更低的温度下沉积。 本文所述的含硅层包含以下特性中的一种或多种：约1.9g / cm 3或更大的密度; 约4×1022cm-3或更低的氢含量，以及通过紫外 - 可见光光谱仪测量的400-700nm的透明度为约90％以上。

    NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME
    7.
    发明申请
    NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME 有权
    含有硅氧烷的非氧化物及其形成方法

    公开(公告)号：US20140030448A1

    公开(公告)日：2014-01-30

    申请号：US13949420

    申请日：2013-07-24

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Heather Regina Bowen ,  Jianheng Li ,  Mark Leonard O'Neill ,  Manchao Xiao ,  Andrew David Johnson ,  Xinjian Lei

    IPC分类号： C23C16/30

    CPC分类号： C23C16/30 ,  C23C16/325 ,  C23C16/36

    摘要： Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.

    摘要翻译： 本文公开了非含氧硅基膜及其形成方法。 非氧硅基膜含有> 50原子％的硅。 在一个方面，硅基膜具有组成SixCyNz，其中x为约51〜100，y为0〜49，z为通过XPS测定的0〜50原子％（重量）％（％）。 在一个实施方案中，使用至少一种具有至少两个SiH 3基团的有机硅前体沉积非氧硅基膜，在硅原子之间具有至少一个C2-3键，例如1,4-二硅烷。