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公开(公告)号：US10242864B2
公开(公告)日：2019-03-26
申请号：US15248214
申请日：2016-08-26
Applicant: Air Products and Chemicals, Inc.
Inventor： Haripin Chandra , Meiliang Wang , Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Mark Leonard O'Neill , Bing Han
IPC: C23C16/00 , H01L21/02 , C23C16/40 , C23C16/455 , C07F7/10
Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500° C. is disclosed. Silicon precursors used have a formula of: R1R2mSi(NR3R4)nXp I. wherein R1, R2, and R3 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0, 1 or 2; and p is 0, 1 or 2 and m+n+p=3; and R1R2mSi(OR3)n(OR4)qXp II. wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R3 and R4 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to form a cyclic ring structure; X is a halide atom selected from the group consisting of Cl, Br and I; m is 0 to 3; n is 0 to 2; q is 0 to 2; p is 0 to 2; and m+n+q+p=3.
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公开(公告)号：US10170297B2
公开(公告)日：2019-01-01
申请号：US14457397
申请日：2014-08-12
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Ronald Martin Pearlstein , Daniel P. Spence
IPC: C09D5/00 , H01L21/02 , C23C16/40 , C23C16/452
Abstract: Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.
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公开(公告)号：US10279959B2
公开(公告)日：2019-05-07
申请号：US14096388
申请日：2013-12-04
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Manchao Xiao , Ronald Martin Pearlstein , Richard Ho , Daniel P. Spence , Xinjian Lei
Abstract: Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.
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公开(公告)号：US09809711B2
公开(公告)日：2017-11-07
申请号：US13738482
申请日：2013-01-10
Applicant: Air Products and Chemicals, Inc.
Inventor： Manchao Xiao , Ronald Martin Pearlstein , Richard Ho , Xinjian Lei , Steven Gerard Mayorga , Daniel P. Spence
CPC classification number: C09D1/00 , B65B1/04 , C08G77/04 , H01L21/02126 , H01L21/02216 , H01L21/02282
Abstract: A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR1)nR24-n and a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR1)nR23-n; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R23-p(R1O)pSi—R3—Si(OR1)pR23-p and a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (R1O)mR22-m(X)Si—R3—Si(OR4)2R5 wherein at least one or all of the R1 and R2 substituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.
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5.发明申请Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films 审中-公开用于沉积碳掺杂的含硅膜的组合物和方法公开(公告)号：US20160351389A1
公开(公告)日：2016-12-01
申请号：US15233018
申请日：2016-08-10
Applicant: Air Products and Chemicals, Inc.
Inventor： Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Jospeh Karwacki, JR. , Bing Han , Mark Leonard O'Neill
CPC classification number: H01L21/02211 , C07F7/0896 , C07F7/10 , C09D5/00 , C09D7/63 , C23C16/30 , C23C16/345 , C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/0228
Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
Abstract translation: 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。
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Patent Agency Ranking
6.发明申请Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same 有权有机氨基二硅烷前体和沉积包含它的薄膜的方法公开(公告)号：US20150024608A1
公开(公告)日：2015-01-22
申请号：US14511719
申请日：2014-10-10
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Steven Gerard Mayorga , Heather Regina Bowen , Xinjian Lei , Manchao Xiao , Haripin Chandra , Anupama Mallikarjunan , Ronald Martin Pearlstein
IPC: H01L21/02
CPC classification number: H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
Abstract translation: 这里描述的是用于形成含硅膜的前体和方法。 一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基 吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。
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公开(公告)号：US09677178B2
公开(公告)日：2017-06-13
申请号：US14940249
申请日：2015-11-13
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Daniel P. Spence , Xinjian Lei , Ronald Martin Pearlstein , Manchao Xiao , Richard Ho
IPC: C07F7/10 , C07F7/18 , C23C16/50 , C23C16/455 , C09D7/12
CPC classification number: C23C16/50 , C07F7/10 , C07F7/1804 , C07F7/188 , C07F7/1888 , C23C16/45525
Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
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公开(公告)号：US09627193B2
公开(公告)日：2017-04-18
申请号：US14511719
申请日：2014-10-10
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Steven Gerard Mayorga , Heather Regina Bowen , Xinjian Lei , Manchao Xiao , Haripin Chandra , Anupama Mallikarjunan , Ronald Martin Pearlstein
CPC classification number: H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
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9.发明授权公开(公告)号：US08993072B2
公开(公告)日：2015-03-31
申请号：US13622117
申请日：2012-09-18
Applicant: Air Products and Chemicals, Inc.
Inventor： Manchao Xiao , Xinjian Lei , Mark Leonard O'Neill , Bing Han , Ronald Martin Pearlstein , Haripin Chandra , Heather Regina Bowen , Agnes Derecskei-Kovacs
CPC classification number: C07F7/025 , C07F7/12 , C23C16/402 , C23C16/45536 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/02532 , H01L21/0262
Abstract: Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: XmR1nHpSi(NR2R3)4-m-n-p I wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.
Abstract translation: 这里描述的是形成膜的前体和方法。 一方面，提供了具有式I的前体：XmR1nHpSi（NR2R3）4-m-n-p1其中X选自Cl，Br，I; R 1选自直链或支链C 1 -C 10烷基，C 2 -C 12烯基，C 2 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; R2选自直链或支链C1-C10烷基，C3-C12烯基，C3-C12炔基，C4-C10环烷基和C6-C10芳基; R3选自支链C 3 -C 10烷基，C 3 -C 12烯基，C 3 -C 12炔基，C 4 -C 10环烷基和C 6 -C 10芳基; m为1或2; n为0,1或2; p为0,1或2; 并且m + n + p小于4，其中R2和R3连接或未连接形成环。
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10.发明申请公开(公告)号：US20150056822A1
公开(公告)日：2015-02-26
申请号：US14457397
申请日：2014-08-12
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Ronald Martin Pearlstein , Daniel P. Spence
IPC: H01L21/02
CPC classification number: H01L21/02164 , C09D5/00 , C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282
Abstract: Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.
Abstract translation: 本文描述的是用于在半导体沉积工艺中形成膜的组合物或制剂，例如但不限于氧化硅的可流动化学气相沉积。 本文还描述了通过引入炔醇或二醇表面活性剂来改善表面润湿性的方法，例如但不限于3,5-二甲基-1-己炔-3-醇，2,4,7,9-四甲基-5-癸炔 -4,7-二醇，4-乙基-1-辛炔-3-醇和2,5-二甲基己烷-2,5-二醇等相关化合物。
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