公开(公告)号：US20160351389A1

公开(公告)日：2016-12-01

申请号：US15233018

申请日：2016-08-10

Applicant: Air Products and Chemicals, Inc.

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Jospeh Karwacki, JR. ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C07F7/10 ,  C09D7/12

CPC classification number: H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Abstract translation: 本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。 本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和 等离子增强CCVD（PECCVD）。