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    Enriched silicon precursor compositions and apparatus and processes for utilizing same
    3.
    发明授权
    Enriched silicon precursor compositions and apparatus and processes for utilizing same 有权
    富集的硅前体组合物及其利用方法

    公开(公告)号：US08779383B2

    公开(公告)日：2014-07-15

    申请号：US13898809

    申请日：2013-05-21

    申请人： Advanced Technology Materials, Inc.

    发明人： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

    IPC分类号： H01J27/02 ,  H01L21/265 ,  G21K5/00

    CPC分类号： H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

    摘要： Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

    摘要翻译： 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

    ENRICHED SILICON PRECURSOR COMPOSITIONS AND APPARATUS AND PROCESSES FOR UTILIZING SAME
    4.
    发明申请
    ENRICHED SILICON PRECURSOR COMPOSITIONS AND APPARATUS AND PROCESSES FOR UTILIZING SAME 有权
    富硅硅前驱体组合物及其使用方法

    公开(公告)号：US20130264492A1

    公开(公告)日：2013-10-10

    申请号：US13898809

    申请日：2013-05-21

    申请人： Advanced Technology Materials, Inc.

    发明人： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

    IPC分类号： H01L21/302

    CPC分类号： H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

    摘要： Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

    摘要翻译： 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

    COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT
    5.
    发明申请
    COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 有权
    太阳能吸附制冷系统的组件和制造这种组件的方法

    公开(公告)号：US20140020419A1

    公开(公告)日：2014-01-23

    申请号：US14035834

    申请日：2013-09-24

    申请人： Advanced Technology Materials, Inc.

    发明人： J. Donald Carruthers ,  Karl Boggs ,  Luping Wang ,  Shaun M. Wilson ,  Jose I. Arno ,  Paul J. Marganski ,  Steven M. Bilodeau ,  Peng Zou ,  Brian Bobita ,  Joseph D. Sweeney

    IPC分类号： B01J20/26 ,  F25B27/00 ,  F25B35/04 ,  B01J20/28 ,  F25B17/08

    CPC分类号： B01J20/26 ,  B01J20/20 ,  B01J20/28054 ,  B01J20/28092 ,  B01J20/30 ,  B01J20/305 ,  B01J20/3078 ,  B01J2220/445 ,  C09K5/047 ,  F25B17/08 ,  F25B27/007 ,  F25B35/04 ,  F25B37/00 ,  F25B2500/01

    摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

    摘要翻译： 描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。 这种吸附结构在吸附剂型制冷系统中有用。 还描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触以形成 一个结构。 该结构被热解以形成多孔吸附剂材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第 第二个地区。

    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING
    6.
    发明申请
    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING 有权
    集成气体混合的装置和方法

    公开(公告)号：US20130330917A1

    公开(公告)日：2013-12-12

    申请号：US13964745

    申请日：2013-08-12

    申请人： Advanced Technology Materials, Inc

    发明人： Jeffrey J. Homan ,  Jose I. Arno ,  Joseph D. Sweeney

    IPC分类号： H01L21/22

    CPC分类号： H01L21/2225 ,  B01F3/028 ,  B01F15/00207 ,  B01F15/0022 ,  B01F15/00285 ,  B01F15/0429 ,  F17C5/06 ,  F17C7/02 ,  F17C13/02 ,  F17C13/025 ,  F17C2221/01 ,  F17C2221/03 ,  F17C2223/0123 ,  F17C2223/035 ,  F17C2225/0123 ,  F17C2225/035 ,  F17C2227/0157 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2250/0443 ,  F17C2250/0447 ,  F17C2250/0452 ,  F17C2250/0626 ,  F17C2265/025 ,  F17C2270/0518 ,  G05D11/132 ,  Y10T137/2509 ,  Y10T137/87571

    摘要： A system (10) for delivery of dilute fluid, utilizing an active fluid source (12), a diluent fluid source (14), a fluid flow metering device (24) for dispensing of one of the active and diluent fluids, a mixer (28) arranged to mix the active and diluent fluids to form a diluted active fluid mixture, and a monitor (42) arranged to sense concentration of active fluid and/or diluent fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device (24) to achieve a predetermined concentration of active fluid in the diluted active fluid mixture. A pressure controller (38) is arranged to control flow of the other of the active and diluent fluids so as to maintain a predetermined pressure of the diluted active fluid mixture dispensed from the system. The fluid dispensed from the system then can be adjustably controlled by a flow rate controller, e.g., a mass flow controller, to provide a desired flow to a fluid-utilizing unit, such as a semiconductor process tool. An end point monitoring assembly is also described, for switching fluid sources (12, 15) to maintain continuity of delivery of the diluted active fluid mixture.

    摘要翻译： 一种用于输送稀释流体的系统（10），其利用活性流体源（12），稀释液体源（14），用于分配活性和稀释流体之一的流体流量计量装置（24），混合器 28），其布置成混合所述活性和稀释液体以形成稀释的活性流体混合物;以及监测器（42），其布置成感测所述稀释的活性流体混合物中的活性流体和/或稀释液的浓度，并响应地调节流体流量计量 装置（24）以在稀释的活性流体混合物中实现预定浓度的活性流体。 压力控制器（38）布置成控制另一个活性和稀释液体的流动，以便保持从系统分配的稀释的活性流体混合物的预定压力。 然后，从系统分配的流体可以由流量控制器（例如质量流量控制器）可调节地控制，以向诸如半导体处理工具的流体利用单元提供期望的流量。 还描述了终点监测组件，用于切换流体源（12,15）以维持稀释的活性流体混合物的输送的连续性。

    ION IMPLANTATION SYSTEM AND METHOD
    8.
    发明申请
    ION IMPLANTATION SYSTEM AND METHOD 有权
    离子植入系统和方法

    公开(公告)号：US20140342538A1

    公开(公告)日：2014-11-20

    申请号：US14452192

    申请日：2014-08-05

    申请人： Advanced Technology Materials, Inc.

    发明人： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

    IPC分类号： H01L21/265 ,  C23C14/52 ,  C23C14/48

    CPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

    摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

    摘要翻译： 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。