COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT
    4.
    发明申请
    COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 有权
    太阳能吸附制冷系统的组件和制造这种组件的方法

    公开(公告)号:US20140020419A1

    公开(公告)日:2014-01-23

    申请号:US14035834

    申请日:2013-09-24

    摘要: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

    摘要翻译: 描述了吸附结构,其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件,以允许气体进入和离开吸附构件的该部分。 这种吸附结构在吸附剂型制冷系统中有用。 还描述了一种用于生产吸附材料的方法,其中提供具有第一密度的第一聚合物材料和第二聚合物材料,其具有第二密度,其中第二聚合物材料与第一聚合物材料接触以形成 一个结构。 该结构被热解以形成多孔吸附剂材料,其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域,其中孔径和孔分布中的至少一个在第一区域和第 第二个地区。

    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING
    5.
    发明申请
    APPARATUS AND PROCESS FOR INTEGRATED GAS BLENDING 有权
    集成气体混合的装置和方法

    公开(公告)号:US20130330917A1

    公开(公告)日:2013-12-12

    申请号:US13964745

    申请日:2013-08-12

    IPC分类号: H01L21/22

    摘要: A system (10) for delivery of dilute fluid, utilizing an active fluid source (12), a diluent fluid source (14), a fluid flow metering device (24) for dispensing of one of the active and diluent fluids, a mixer (28) arranged to mix the active and diluent fluids to form a diluted active fluid mixture, and a monitor (42) arranged to sense concentration of active fluid and/or diluent fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device (24) to achieve a predetermined concentration of active fluid in the diluted active fluid mixture. A pressure controller (38) is arranged to control flow of the other of the active and diluent fluids so as to maintain a predetermined pressure of the diluted active fluid mixture dispensed from the system. The fluid dispensed from the system then can be adjustably controlled by a flow rate controller, e.g., a mass flow controller, to provide a desired flow to a fluid-utilizing unit, such as a semiconductor process tool. An end point monitoring assembly is also described, for switching fluid sources (12, 15) to maintain continuity of delivery of the diluted active fluid mixture.

    摘要翻译: 一种用于输送稀释流体的系统(10),其利用活性流体源(12),稀释液体源(14),用于分配活性和稀释流体之一的流体流量计量装置(24),混合器 28),其布置成混合所述活性和稀释液体以形成稀释的活性流体混合物;以及监测器(42),其布置成感测所述稀释的活性流体混合物中的活性流体和/或稀释液的浓度,并响应地调节流体流量计量 装置(24)以在稀释的活性流体混合物中实现预定浓度的活性流体。 压力控制器(38)布置成控制另一个活性和稀释液体的流动,以便保持从系统分配的稀释的活性流体混合物的预定压力。 然后,从系统分配的流体可以由流量控制器(例如质量流量控制器)可调节地控制,以向诸如半导体处理工具的流体利用单元提供期望的流量。 还描述了终点监测组件,用于切换流体源(12,15)以维持稀释的活性流体混合物的输送的连续性。

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    6.
    发明申请
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 有权
    使用替代性氟化硼前体的硼离子植入和形成用于植入的大量硼氢化合物

    公开(公告)号:US20130137250A1

    公开(公告)日:2013-05-30

    申请号:US13726826

    申请日:2012-12-26

    IPC分类号: H01L21/265

    摘要: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    摘要翻译: 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法,包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系,以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中,为了制造半导体产品例如集成电路,产生用于簇硼注入的硼氢化物前体。