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1.发明授权Methods of providing patterned chemical epitaxy templates for self-assemblable block copolymers for use in device lithography 有权提供用于装置光刻的自组装嵌段共聚物的图案化化学外延模板的方法公开(公告)号：US09235125B2
公开(公告)日：2016-01-12
申请号：US14380911
申请日：2013-02-06
Applicant: ASML Netherlands B.V.
Inventor： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch , Aurelie Marie Andree Brizard , Henri Marie Joseph Boots , Thanh Trung Nguyen , Oktay Yildirim
CPC classification number: G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/2002
Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.
Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。
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2.发明申请METHODS AND COMPOSITIONS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 有权通过块状共聚物自组装提供基板上的间距平面特征的方法和组合公开(公告)号：US20150064630A1
公开(公告)日：2015-03-05
申请号：US14391156
申请日：2013-03-19
Applicant: ASML Netherlands B.V.
Inventor： Sander Frederik Wuister , Emiel Peeters
CPC classification number: G03F7/20 , B82Y10/00 , B82Y40/00 , C08L53/00 , G03F7/0002
Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.
Abstract translation: 公开了一种形成沿衬底上的轴线的相互间隔的细长光刻特征行的方法，例如用作NAND器件的接触电极。 该方法包括将自组装嵌段共聚物（BCP）组合物引导到衬底上的抗蚀剂层的沟槽中，其具有衬底作为基底，在沟槽中具有外延特征，以使有序的BCP层具有伸长的畴伸长 横跨沟槽宽度，基本上彼此平行并且与基底平行。 然后将有序的BCP层用作抗蚀剂以对基底进行图案化。 公开了适于与间隔不连续的细长椭圆域组装的BCP组合物。 该方法可以允许使用UV光刻形成亚分辨率接触阵列。
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3.发明申请METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权提供用于自组装嵌段共聚物的图案化学外延模板用于器件平台的方法公开(公告)号：US20150010869A1
公开(公告)日：2015-01-08
申请号：US14380911
申请日：2013-02-06
Applicant: ASML Netherlands B.V.
Inventor： Emiel Peeters , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Roelof Koole , Christianus Martinus Van Heesch , Aurelie Marie Andree Brizard , Henri Marie Joseph Boots , Thanh Trung Nguyen , Oktay Yildirim
CPC classification number: G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/2002
Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.
Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。
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4.发明授权Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers 有权通过嵌段共聚物的自组装在基材上提供间隔光刻特征的方法和组合物公开(公告)号：US09250528B2
公开(公告)日：2016-02-02
申请号：US14391156
申请日：2013-03-19
Applicant: ASML Netherlands B.V.
Inventor： Sander Frederik Wuister , Emiel Peeters
CPC classification number: G03F7/20 , B82Y10/00 , B82Y40/00 , C08L53/00 , G03F7/0002
Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.
Abstract translation: 公开了一种形成沿衬底上的轴线的相互间隔的细长光刻特征行的方法，例如用作NAND器件的接触电极。 该方法包括将自组装嵌段共聚物（BCP）组合物引导到衬底上的抗蚀剂层的沟槽中，其具有衬底作为基底，在沟槽中具有外延特征，以使有序的BCP层具有伸长的畴伸长 横跨沟槽宽度，基本上彼此平行并且与基底平行。 然后将有序的BCP层用作抗蚀剂以对基底进行图案化。 公开了适于与间隔不连续的细长椭圆域组装的BCP组合物。 该方法可以允许使用UV光刻形成亚分辨率接触阵列。
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5.发明授权Methods of providing patterned templates for self-assemblable block copolymers for use in device lithography 有权提供用于装置光刻的自组装嵌段共聚物的图案化模板的方法公开(公告)号：US09229324B2
公开(公告)日：2016-01-05
申请号：US14385047
申请日：2013-03-06
Applicant: ASML Netherlands B.V.
Inventor： Harmeet Singh , Vadim Yevgenyevich Banine , Jozef Maria Finders , Sander Frederik Wuister , Roelof Koole , Emiel Peeters
IPC: G03F7/16 , G03F7/038 , G03F7/00 , G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/30 , G03F7/40 , H01L21/027
CPC classification number: G03F7/162 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/165 , G03F7/2022 , G03F7/2024 , G03F7/30 , G03F7/40 , H01L21/027
Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.
Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。
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Patent Agency Ranking
6.发明申请METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权提供用于自组装块式共聚物的图案模式的方法用于器件平台的使用公开(公告)号：US20150034594A1
公开(公告)日：2015-02-05
申请号：US14385047
申请日：2013-03-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Harmeet Singh , Vadim Yevgenyevich Banine , Jozef Maria Finders , Sander Frederik Wuister , Roelof Koole , Emiel Peeters
CPC classification number: G03F7/162 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/165 , G03F7/2022 , G03F7/2024 , G03F7/30 , G03F7/40 , H01L21/027
Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.
Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物的取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。
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7.发明申请公开(公告)号：US20140346141A1
公开(公告)日：2014-11-27
申请号：US14369958
申请日：2012-12-18
Applicant: ASML Netherlands B.V.
Inventor： Aurelie Marie Andree Brizard , Roelof Koole , Emiel Peeters
CPC classification number: B05D3/107 , B05D1/28 , B05D1/60 , B05D3/007 , B82Y40/00 , C08L53/00 , G03F7/0002
Abstract: A method of forming a self-assembled block polymer layer, oriented to form an ordered array of alternating domains, is disclosed. The method involves providing a layer of the self-assemblable block copolymer on the substrate and depositing a first surfactant onto the external surface of the layer prior to inducing self-assembly of the layer to form the ordered array of domains. The first surfactant has a hydrophobic tail and a hydrophilic head group and acts to reduce the interfacial energy at the external surface of the block copolymer layer in order to promote formation of assembly of the block copolymer polymer into an ordered array having the alternating domains.
Abstract translation: 公开了一种形成自组装嵌段聚合物层的方法，其被定向以形成交替畴的有序阵列。 该方法包括在基底上提供一层可自组装的嵌段共聚物，并在引导层的自组装形成畴的有序阵列之前，将第一表面活性剂沉积到该层的外表面上。 第一表面活性剂具有疏水性尾巴和亲水性头基，并且用于降低嵌段共聚物层的外表面处的界面能，以促进嵌段共聚物聚合物组装成具有交替域的有序阵列。
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8.发明授权公开(公告)号：US10551736B2
公开(公告)日：2020-02-04
申请号：US14419212
申请日：2013-07-26
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria Finders , Tamara Druzhinina , Emiel Peeters , Sander Frederik Wuister , Christianus Martinus Van Heesch , Eddy Cornelis Antonius Van Der Heijden , Henri Marie Joseph Boots
Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.
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9.发明申请METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开通过嵌段共聚物自组装提供基板上的刻蚀特征的方法公开(公告)号：US20150205197A1
公开(公告)日：2015-07-23
申请号：US14419212
申请日：2013-07-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Jozef Maria Finders , Tamara Druzhinina , Emiel Peeters , Sander Frederik Wuister , Christianus Martinus Van Heesch , Eddy Cornelis Antonius Van Der Heijden , Henri Marie Joseph Boots
Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.
Abstract translation: 设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计，例如放置误差，相对于 通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。 除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。 除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。
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10.发明申请METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权提供用于自组装块式共聚物的图案外延模板的方法用于器件平台公开(公告)号：US20150050599A1
公开(公告)日：2015-02-19
申请号：US14387186
申请日：2013-03-19
Applicant: ASML Netherlands B.V.
Inventor： Sander Frederik Wuister , Vadim Yevgenyevich Banine , Jozef Maria Finders , Roelof Koole , Emiel Peeters , Harmeet Singh
CPC classification number: G03F7/26 , B05D1/32 , B05D3/107 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/20 , G03F7/2022
Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.
Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。
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