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公开(公告)号：US10331042B2
公开(公告)日：2019-06-25
申请号：US15271947
申请日：2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Laurentius Cornelius De Winter , Jozef Maria Finders
IPC: G03F7/20
Abstract: A method is described that includes illuminating a patterning device pattern with a radiation beam having a symmetric illumination mode, the patterning device pattern comprising a first pattern feature that substantially diffracts radiation of the radiation beam, and a second pattern feature that does not substantially diffract radiation of the radiation beam, introducing an asymmetry, relative to an optical axis, in the substantially diffracted radiation using a phase modulation element, illuminating a radiation beam receiving element with radiation emanating from the phase modulation element to form a receiving element pattern that is related to the patterning device pattern, the receiving element pattern having first and second receiving element pattern features related to the first and second pattern features respectively, and determining information at least indicative of a focal property from positional information regarding the relative positions of the first and second receiving element pattern features.
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2.发明授权Methods of providing patterned templates for self-assemblable block copolymers for use in device lithography 有权提供用于装置光刻的自组装嵌段共聚物的图案化模板的方法公开(公告)号：US09229324B2
公开(公告)日：2016-01-05
申请号：US14385047
申请日：2013-03-06
Applicant: ASML Netherlands B.V.
Inventor： Harmeet Singh , Vadim Yevgenyevich Banine , Jozef Maria Finders , Sander Frederik Wuister , Roelof Koole , Emiel Peeters
IPC: G03F7/16 , G03F7/038 , G03F7/00 , G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/30 , G03F7/40 , H01L21/027
CPC classification number: G03F7/162 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/165 , G03F7/2022 , G03F7/2024 , G03F7/30 , G03F7/40 , H01L21/027
Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.
Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。
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3.发明申请METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权提供用于自组装块式共聚物的图案模式的方法用于器件平台的使用公开(公告)号：US20150034594A1
公开(公告)日：2015-02-05
申请号：US14385047
申请日：2013-03-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Harmeet Singh , Vadim Yevgenyevich Banine , Jozef Maria Finders , Sander Frederik Wuister , Roelof Koole , Emiel Peeters
CPC classification number: G03F7/162 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/165 , G03F7/2022 , G03F7/2024 , G03F7/30 , G03F7/40 , H01L21/027
Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.
Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物的取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。
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公开(公告)号：US10775705B2
公开(公告)日：2020-09-15
申请号：US16325228
申请日：2017-08-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Jozef Maria Finders , Orion Jonathan Pierre Mouraille , Anton Bernhard Van Oosten
IPC: G03F7/20
Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.
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公开(公告)号：US20170010542A1
公开(公告)日：2017-01-12
申请号：US15271947
申请日：2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Laurentius Cornelius De Winter , Jozef Maria Finders
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70125 , G03F7/70308 , G03F7/70591 , G03F7/70891
Abstract: A method is described that includes illuminating a patterning device pattern with a radiation beam having a symmetric illumination mode, the patterning device pattern comprising a first pattern feature that substantially diffracts radiation of the radiation beam, and a second pattern feature that does not substantially diffract radiation of the radiation beam, introducing an asymmetry, relative to an optical axis, in the substantially diffracted radiation using a phase modulation element, illuminating a radiation beam receiving element with radiation emanating from the phase modulation element to form a receiving element pattern that is related to the patterning device pattern, the receiving element pattern having first and second receiving element pattern features related to the first and second pattern features respectively, and determining information at least indicative of a focal property from positional information regarding the relative positions of the first and second receiving element pattern features.
Abstract translation: 描述了一种方法，其包括用具有对称照明模式的辐射束照射图案形成装置图案，图案形成装置图案包括基本上衍射辐射束的辐射的第一图案特征，以及基本上不辐射辐射的第二图案特征 使用相位调制元件在基本上衍射的辐射中引入相对于光轴的不对称性，用相位调制元件发射的辐射照射辐射束接收元件，以形成与 图案形成装置图案，接收元件图案具有分别与第一和第二图案特征相关的第一和第二接收元件图案特征，以及根据关于第一和第二图案特征的相对位置的位置信息来确定至少指示焦点特性的信息 g元素图案特征。
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Patent Agency Ranking
公开(公告)号：US12197120B2
公开(公告)日：2025-01-14
申请号：US17426806
申请日：2020-01-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Marie-Claire Van Lare , Frank Jan Timmermans , Friso Wittebrood , John Martin McNamara , Jozef Maria Finders
Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.
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公开(公告)号：US10401723B2
公开(公告)日：2019-09-03
申请号：US16300370
申请日：2017-05-30
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan De Groot , Gerard Frans Jozef Schasfoort , Maksym Yuriiovych Sladkov , Manfred Petrus Johannes Maria Dikkers , Jozef Maria Finders , Pieter-Jan Van Zwol , Johannes Jacobus Matheus Baselmans , Stefan Michael Bruno Baumer , Laurentius Cornelius De Winter , Wouter Joep Engelen , Marcus Adrianus Van De Kerkhof , Robbert Jan Voogd
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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8.发明申请METHOD TO PROVIDE A PATTERNED ORIENTATION TEMPLATE FOR A SELF-ASSEMBLABLE POLYMER 审中-公开为自组装聚合物提供图案方向模板的方法公开(公告)号：US20140245948A1
公开(公告)日：2014-09-04
申请号：US14345891
申请日：2012-10-02
Applicant: ASML Netherlands B.V.
Inventor： Thanh Trung Nguyen , Jozef Maria Finders , Wilhelmus Sebastianus Marcus Maria Ketelaars , Sander Frederik Wuister , Eddy Cornelis Antonius Van Der Heijden , Hieronymus Johannus Christiaan Meessen , Roelof Koole , Emiel Peeters , Christianus Martinus Van Heesch , Aurelie Marie Andree Brizard , Henri Marie Joseph Boots , Tamara Druzhinina , Jessica Marggaretha De Ruiter
IPC: C30B1/12
CPC classification number: C30B1/12 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G03F7/0002 , H01L21/0337 , Y10T117/10
Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.
Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。
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9.发明授权公开(公告)号：US10551736B2
公开(公告)日：2020-02-04
申请号：US14419212
申请日：2013-07-26
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria Finders , Tamara Druzhinina , Emiel Peeters , Sander Frederik Wuister , Christianus Martinus Van Heesch , Eddy Cornelis Antonius Van Der Heijden , Henri Marie Joseph Boots
Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.
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公开(公告)号：US09513109B2
公开(公告)日：2016-12-06
申请号：US14608011
申请日：2015-01-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Jozef Maria Finders
Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.
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