公开(公告)号：US09235125B2

公开(公告)日：2016-01-12

申请号：US14380911

申请日：2013-02-06

Applicant: ASML Netherlands B.V.

Inventor： Emiel Peeters ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Roelof Koole ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Thanh Trung Nguyen ,  Oktay Yildirim

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。

公开(公告)号：US20150010869A1

公开(公告)日：2015-01-08

申请号：US14380911

申请日：2013-02-06

Applicant: ASML Netherlands B.V.

Inventor： Emiel Peeters ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Roelof Koole ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Thanh Trung Nguyen ,  Oktay Yildirim

IPC: G03F7/20 ,  G03F7/038

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。

公开(公告)号：US10240250B2

公开(公告)日：2019-03-26

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Margaretha De Ruiter

IPC: C30B1/12 ,  B81C1/00 ,  G03F7/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

公开(公告)号：US20140245948A1

公开(公告)日：2014-09-04

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van Der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Marggaretha De Ruiter

IPC: C30B1/12

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。