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    Movable support and lithographic apparatus
    2.
    发明授权
    Movable support and lithographic apparatus 有权

    公开(公告)号：US10228626B2

    公开(公告)日：2019-03-12

    申请号：US15736297

    申请日：2016-04-28

    Applicant: ASML Netherlands B.V.

    Inventor： Antonius Franciscus Johannes De Groot ,  Theo Anjes Maria Ruijl ,  Christiaan Louis Valentin ,  Christian Werner

    IPC: G03F7/20 ,  G03B27/58 ,  H01L21/027 ,  H01L21/68

    Abstract: A movable support configured to support an object, the support including: a support plane to support the object, an actuator assembly to move the movable support in a first direction and in a second direction perpendicular to the first direction, wherein the first direction and the second direction extend in a plane parallel to the support plane, wherein the actuator assembly includes: a first actuator configured to exert a first actuation force in a first actuation direction, the first actuation direction being parallel to the support plane, a second actuator configured to exert a second actuation force in a second actuation direction, the second actuation direction being parallel to the support plane, wherein the first actuation direction and the second actuation direction are arranged non-parallel and non-perpendicular with respect to each other.

    Patterning Device Manipulating System and Lithographic Apparatuses
    3.
    发明申请
    Patterning Device Manipulating System and Lithographic Apparatuses 有权
    图案设备操纵系统和平版印刷设备

    公开(公告)号：US20150277241A1

    公开(公告)日：2015-10-01

    申请号：US14437294

    申请日：2013-09-20

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Christiaan Louis Valentin ,  Erik Roelof Loopstra ,  Christopher Charles Ward ,  Daniel Nathan Burbank ,  Mark Josef Schuster ,  Peter James Graffeo

    IPC: G03F7/20

    CPC classification number: G03F7/70783 ,  G03F7/70266 ,  G03F7/70433 ,  G03F7/707 ,  G03F7/70725 ,  G03F7/70758 ,  G03F7/70775 ,  G03F7/70825

    Abstract: A system (300) for supporting an exchangeable object (302) can include a movable structure (304) and an object holder (306) configured to be movable relative to the movable structure. The object holder can be configured to hold the exchangeable object. The system can also include a first actuator assembly (308) and second actuator assembly (316). The first actuator assembly can be configured to apply a force to the object holder to translate the exchangeable object generally along a plane. The second actuator assembly can be configured to apply a bending moment to the object holder. The exchangeable object can be a patterning device of a lithographic apparatus.

    Abstract translation: 用于支撑可更换物体（302）的系统（300）可以包括可移动结构（304）和被配置为相对于可移动结构可移动的物体保持器（306）。 对象保持器可以被配置为保持可更换对象。 系统还可以包括第一致动器组件（308）和第二致动器组件（316）。 第一致动器组件可以被配置成向对象支架施加力，以大致沿着平面平移可交换对象。 第二致动器组件可以被配置为向对象保持器施加弯矩。 可交换对象可以是光刻设备的图案形成装置。

    Lithographic Method and Apparatus
    6.
    发明申请
    Lithographic Method and Apparatus 有权
    平版印刷方法和装置

    公开(公告)号：US20150253679A1

    公开(公告)日：2015-09-10

    申请号：US14428023

    申请日：2013-09-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Erik Roelof Loopstra ,  Jan Bernard Plechelmus Van Schoot ,  Timotheus Franciscus Sengers ,  Christiaan Louis Valentin ,  Antonius Johannes Josephus Van Dijsseldonk

    IPC: G03F7/20

    CPC classification number: G03F7/70425 ,  G03F7/7045 ,  G03F7/70466 ,  G03F7/70475

    Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

    Abstract translation: 公开了一种使用EUV光刻设备将基板上的图案化区域曝光的方法，该光刻设备具有约5×的平均值和约0.4的数值孔径。 该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光，第一部分尺寸明显小于常规曝光的尺寸，并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光 或更多额外的曝光，附加部分的尺寸明显小于常规曝光的尺寸。 该方法还包括重复上述步骤以暴露衬底上的第二图案化区域，第二图案化区域设置有与第一图案化区域相同的图案，其中第一和第二图案化区域的中心点之间的距离对应于尺寸 的常规曝光。

    Projection system
    8.
    发明授权
    Projection system 有权

    公开(公告)号：US10248027B2

    公开(公告)日：2019-04-02

    申请号：US15525610

    申请日：2015-11-16

    Applicant: ASML Netherlands B.V.

    Inventor： Hans Butler ,  Raoul Maarten Simon Knops ,  Bob Streefkerk ,  Christiaan Louis Valentin ,  Jan Bernard Plechelmus Van Schoot ,  Wilhelmus Franciscus Johannes Simons ,  Leon Leonardus Franciscus Merkx ,  Robertus Johannes Marinus De Jongh ,  Roel Johannes Elisabeth Merry ,  Michael Frederik Ypma

    IPC: G03F7/20

    Abstract: A projection system (PS1) for a lithographic apparatus comprises: an optical path (100); a plurality of sensors (S1-S4); one or more actuators (A1-A4); and a controller (CN). The optical path is operable to receive an input radiation beam (Bin) and to project an output radiation beam (Bout) onto a substrate to form an image. The optical path comprises: a plurality of optical elements (M1-M4), the plurality of optical elements comprising: a first set of at least two optical elements (M1, M4) and a second set of at least one optical element (M2, M3). Each sensor is associated with one of the plurality of optical elements and is operable to determine a position of that optical element. Each actuator is associated with one of the second set of optical elements and is operable to adjust that optical element. The controller is operable to use the one or more actuators to adjust the second set of optical elements in dependence on the determined position of the first set of optical elements so as to at least partially compensate for optical aberrations and/or line-of-sight errors caused by the positions of the first set of optical elements.

    Lithographic method and apparatus
    9.
    发明授权
    Lithographic method and apparatus 有权

    公开(公告)号：US09958787B2

    公开(公告)日：2018-05-01

    申请号：US14428023

    申请日：2013-09-17

    Applicant: ASML Netherlands B.V.

    Inventor： Erik Roelof Loopstra ,  Jan Bernard Plechelmus Van Schoot ,  Timotheus Franciscus Sengers ,  Christiaan Louis Valentin ,  Antonius Johannes Josephus Van Dijsseldonk

    IPC: G03B27/52 ,  G03F7/20

    CPC classification number: G03F7/70425 ,  G03F7/7045 ,  G03F7/70466 ,  G03F7/70475

    Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

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