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公开(公告)号：US20140285782A1
公开(公告)日：2014-09-25
申请号：US14356124
申请日：2012-11-14
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/70425 , G02B27/126 , G03F7/70275 , G03F7/70291 , G03F7/70391 , G03F7/704
Abstract: An exposure apparatus having a projection system configured to project a plurality of radiation beams onto a target and an image slicer. The image slicer is arranged in an inverted configuration such that, if an input image formed of a plurality of separated image regions were provided to the image slicer, it would output an output image formed from the plurality of image regions, each arranged to adjoin an adjacent image region. The exposure apparatus is configured such that each of the radiation beams is input into the image slicer at a location corresponding to a respective one of the separated image regions.
Abstract translation: 具有投影系统的曝光装置，其配置为将多个辐射束投射到目标物和图像限幅器上。 图像限幅器被布置成反向配置，使得如果由多个分离的图像区域形成的输入图像被提供给图像限幅器，则其将输出由多个图像区域形成的输出图像，每个图像区域布置成邻接 相邻图像区域。 曝光装置被配置为使得每个辐射束在对应于分离的图像区域中的相应一个的位置处被输入到图像限幅器中。
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公开(公告)号：US10001709B2
公开(公告)日：2018-06-19
申请号：US15432698
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Johannes Hubertus Josephina Moors , Jan Bernard Plechelmus Van Schoot , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Antonius Johannes Josephus Van Dijsseldonk , Wilhelmus Petrus De Boeij
CPC classification number: G03F7/70191 , B82Y10/00 , G02B1/11 , G02B5/1838 , G02B5/281 , G02B5/283 , G03F7/70008 , G03F7/702 , G03F7/70308 , G03F7/70575 , G21K1/062 , G21K1/067 , G21K2201/061 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.
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Patent Agency Ranking
公开(公告)号：US20170160646A1
公开(公告)日：2017-06-08
申请号：US15432698
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Vadim Yevgenyevich BANINE , Erik Roelof Loopstra , Johannes Hubertus Josephina Moors , Jan Bernard Plechelmus Van Schoot , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Antonius Johannes Josephus Van Dijsseldonk , Wilhelmus Petrus De Boeij
CPC classification number: G03F7/70191 , B82Y10/00 , G02B1/11 , G02B5/1838 , G02B5/281 , G02B5/283 , G03F7/70008 , G03F7/702 , G03F7/70308 , G03F7/70575 , G21K1/062 , G21K1/067 , G21K2201/061 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.
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公开(公告)号：US09341960B2
公开(公告)日：2016-05-17
申请号：US14356124
申请日：2012-11-14
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70425 , G02B27/126 , G03F7/70275 , G03F7/70291 , G03F7/70391 , G03F7/704
Abstract: An exposure apparatus having a projection system configured to project a plurality of radiation beams onto a target and an image slicer. The image slicer is arranged in an inverted configuration such that, if an input image formed of a plurality of separated image regions were provided to the image slicer, it would output an output image formed from the plurality of image regions, each arranged to adjoin an adjacent image region. The exposure apparatus is configured such that each of the radiation beams is input into the image slicer at a location corresponding to a respective one of the separated image regions.
Abstract translation: 具有投影系统的曝光装置，其配置为将多个辐射束投射到目标物和图像限幅器上。 图像限幅器被布置成反向配置，使得如果由多个分离的图像区域形成的输入图像被提供给图像限幅器，则其将输出由多个图像区域形成的输出图像，每个图像区域布置成邻接 相邻图像区域。 曝光装置被配置为使得每个辐射束在对应于分离的图像区域中的相应一个的位置处被输入到图像限幅器中。
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公开(公告)号：US09835950B2
公开(公告)日：2017-12-05
申请号：US15112602
申请日：2014-12-19
Applicant: ASML Netherlands B.V.
Inventor： Markus Franciscus Antonius Eurlings , Niek Antonius Jacobus Maria Kleemans , Antonius Johannes Josephus Van Dijsseldonk , Ramon Mark Hofstra , Oscar Franciscus Jozephus Noordman , Tien Nang Pham , Jan Bernard Plechelmus Van Schoot , Jiun-Cheng Wang , Kevin Weimin Zhang
CPC classification number: G03F7/70091 , G02B19/0019 , G02B27/0905 , G02B27/0983 , G03F7/70033 , G03F7/70175 , H05G2/005 , H05G2/008
Abstract: A faceted reflector (32, 32″) for receiving an incident radiation beam (2) and directing a reflected radiation beam at a target. The faceted reflector comprises a plurality of facets, each of the plurality of facets comprising a reflective surface. The reflective surfaces of each of a first subset of the plurality of facets define respective parts of a first continuous surface and are arranged to reflect respective first portions of the incident radiation beam in a first direction to provide a first portion of the reflected radiation beam. The reflective surfaces of each of a second subset of the plurality of facets define respective parts of a second continuous surface and are arranged to reflect respective second portions of the incident radiation beam in a second direction to provide a second portion of the reflected radiation beam.
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公开(公告)号：US20150253679A1
公开(公告)日：2015-09-10
申请号：US14428023
申请日：2013-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Timotheus Franciscus Sengers , Christiaan Louis Valentin , Antonius Johannes Josephus Van Dijsseldonk
IPC: G03F7/20
CPC classification number: G03F7/70425 , G03F7/7045 , G03F7/70466 , G03F7/70475
Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
Abstract translation: 公开了一种使用EUV光刻设备将基板上的图案化区域曝光的方法，该光刻设备具有约5×的平均值和约0.4的数值孔径。 该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光，第一部分尺寸明显小于常规曝光的尺寸，并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光 或更多额外的曝光，附加部分的尺寸明显小于常规曝光的尺寸。 该方法还包括重复上述步骤以暴露衬底上的第二图案化区域，第二图案化区域设置有与第一图案化区域相同的图案，其中第一和第二图案化区域的中心点之间的距离对应于尺寸 的常规曝光。
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公开(公告)号：US09958787B2
公开(公告)日：2018-05-01
申请号：US14428023
申请日：2013-09-17
Applicant: ASML Netherlands B.V.
Inventor： Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Timotheus Franciscus Sengers , Christiaan Louis Valentin , Antonius Johannes Josephus Van Dijsseldonk
CPC classification number: G03F7/70425 , G03F7/7045 , G03F7/70466 , G03F7/70475
Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
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