公开(公告)号：US20160208380A1

公开(公告)日：2016-07-21

申请号：US14988582

申请日：2016-01-05

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Suhail ANWAR ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Tae Kyung WON ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo Park ,  Benjamin M. JOHNSTON

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/511 ,  C23C16/513 ,  C23C16/54

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

公开(公告)号：US20190198217A1

公开(公告)日：2019-06-27

申请号：US16292269

申请日：2019-03-04

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: H01F17/06 ,  C23C16/505 ,  H01F27/08 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01F17/06 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08 ,  H01F2017/065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/0206 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20160362788A1

公开(公告)日：2016-12-15

申请号：US15107878

申请日：2015-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Shinichi KURITA ,  Jozef KUDELA ,  John M. WHITE ,  Dieter HAAS

IPC: C23C16/455 ,  H01L51/52 ,  H01L51/56

CPC classification number: C23C16/45548 ,  C23C16/042 ,  C23C16/4402 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742 ,  H01L51/0011 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.

Abstract translation: 本公开涉及用于器件制造的原子层沉积（ALD）处理室的方法和装置以及用于替换气体分布板及其掩模的方法。 ALD处理室具有狭缝阀，其构造成允许气体分配板和掩模的移除和更换。 ALD处理室还可以具有可操作以将气体分配板移动到过程位置和从处理位置移动的致动器和可操作以将掩模移动到过程位置和从处理位置移动掩模的基板支撑组件。

公开(公告)号：US20190189328A1

公开(公告)日：2019-06-20

申请号：US16282085

申请日：2019-02-21

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: H01F17/06 ,  C23C16/505 ,  H01F27/08 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01F17/06 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08 ,  H01F2017/065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/0206 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20170178867A1

公开(公告)日：2017-06-22

申请号：US15365497

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Allen K. LAU ,  Robin L. TINER ,  Gaku FURUTA ,  John M. WHITE ,  William Norman STERLING ,  Dongsuh LEE ,  Suhail ANWAR ,  Shinichi KURITA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/3321

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

公开(公告)号：US20140216344A1

公开(公告)日：2014-08-07

申请号：US14249459

申请日：2014-04-10

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: H01F17/06 ,  H01F27/08 ,  C23C16/505

CPC classification number: H01F17/06 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08 ,  H01F2017/065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/0206 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract translation: 在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。 接地的气体供给管与喷头电气隔离。 气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。 气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。 通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

公开(公告)号：US20200347499A1

公开(公告)日：2020-11-05

申请号：US16400923

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Suhail ANWAR ,  Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Jeevan Prakash SEQUEIRA

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

Abstract: Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.

公开(公告)号：US20150273490A1

公开(公告)日：2015-10-01

申请号：US14726067

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Jonghoon BAEK ,  John M. WHITE ,  Robin TINER ,  Suhail ANWAR ,  Gaku FURUTA

IPC: B05B1/18

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：US20210090777A1

公开(公告)日：2021-03-25

申请号：US17113769

申请日：2020-12-07

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Carl A. SORENSEN ,  John M. WHITE

IPC: H01F17/06 ,  H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01F27/08

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

公开(公告)号：US20190043695A1

公开(公告)日：2019-02-07

申请号：US16031701

申请日：2018-07-10

Applicant: Applied Materials, Inc.

Inventor： Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Suhail ANWAR

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.