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    THERMALLY ISOLATED ELECTRONICS UTILITIES CAVITY FOR A SUBSTRATE CARRIER
    1.
    发明申请
    THERMALLY ISOLATED ELECTRONICS UTILITIES CAVITY FOR A SUBSTRATE CARRIER 审中-公开

    公开(公告)号：US20190355607A1

    公开(公告)日：2019-11-21

    申请号：US15986452

    申请日：2018-05-22

    Applicant: Applied Materials, Inc.

    Inventor： Shreesha Y. RAO ,  Joseph VINCENT ,  Wenwei QIAO ,  John M. WHITE

    IPC: H01L21/683 ,  H01L21/67 ,  H01M2/10

    Abstract: Described herein is a substrate carrier comprises a plurality of electrostatic chuck panels and a carrier body. The plurality of electrostatic chuck panels is disposed on the carrier body. The carrier body has an electronics utilities cavity, and a thermal insulating material disposed on at least one wall of the electronics utilities cavity. A battery is disposed within the electronics cavity, and is configured to provide a first power supply signal to control electronics. The carrier body may additionally include a first body member having the electrostatic chuck panels disposed thereon, and a second body member separated from the first body member by thermal breaks. The electronics utilities cavity may be housed within the second body member of the carrier body.

    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN
    4.
    发明申请
    PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN 审中-公开
    气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US20160056019A1

    公开(公告)日：2016-02-25

    申请号：US14932618

    申请日：2015-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li Hou ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo Park ,  Robin L. TINER

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    Abstract translation: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    METHOD AND APPARATUS FOR ANGLED ETCHING
    5.
    发明申请
    METHOD AND APPARATUS FOR ANGLED ETCHING 审中-公开

    公开(公告)号：US20200321186A1

    公开(公告)日：2020-10-08

    申请号：US16373254

    申请日：2019-04-02

    Applicant: Applied Materials, Inc.

    Inventor： John M. WHITE ,  Yang YANG ,  Kartik RAMASWAMY ,  Manivannan THOTHADRI ,  Yue GUO

    IPC: H01J37/063 ,  H01J37/077 ,  H01J37/32

    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

    DUAL LOOP SUSCEPTOR TEMPERATURE CONTROL SYSTEM
    8.
    发明申请
    DUAL LOOP SUSCEPTOR TEMPERATURE CONTROL SYSTEM 审中-公开

    公开(公告)号：US20170322606A1

    公开(公告)日：2017-11-09

    申请号：US15147908

    申请日：2016-05-05

    Applicant: Applied Materials, Inc.

    Inventor： John M. WHITE

    IPC: G06F1/20 ,  G05D7/06 ,  G05B15/02

    CPC classification number: G06F1/20 ,  G05B15/02 ,  G05D7/0676 ,  G05D23/1393 ,  H01L21/67103

    Abstract: Embodiments described herein generally relate to a temperature control system for a substrate support assembly disposed in a substrate processing system. In one embodiment, a temperature control system is disclosed herein. The temperature control system includes a remote fluid source and a main frame system. The remote fluid source includes a first reservoir and a second reservoir. The main frame system includes a first fluid loop and a second fluid loop. The first fluid loop is coupled to, and configured to receive a first fluid from, the first reservoir. The second fluid loop is coupled to and configured to receive a second fluid from the second reservoir. The first proportioning valve has a first inlet in communication with the first fluid loop and a second inlet in communication with the second fluid loop. The first proportioning valve has an outlet configured to flow a third fluid.

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