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公开(公告)号：US20240292547A1
公开(公告)日：2024-08-29
申请号：US18204871
申请日：2023-06-01
CPC分类号： H05K5/0004 , H05K3/284 , H05K3/3421 , H05K3/4038
摘要： In one example, an electronic device comprises a substrate structure, comprising a base comprising a top side and a bottom side, a first lead, and a flag comprising a top side, a bottom side, and a flag lead. The electronic device also comprises an electronic component comprising a top side and a bottom side, a first electrode at the bottom side of the electronic component, and second electrode at the top side of the electronic component, an encapsulant contacting a lateral side of the electronic component and a lateral side of the base, and a first interconnect in the encapsulant, coupled between the first electrode and the first lead. The second electrode is coupled with the flag lead via the base. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20230187410A1
公开(公告)日：2023-06-15
申请号：US18105970
申请日：2023-02-06
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/065 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/31
CPC分类号： H01L25/0655 , H01L23/49822 , H01L23/49833 , H01L21/561 , H01L23/5385 , H01L21/563 , H01L23/3128
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US12080682B2
公开(公告)日：2024-09-03
申请号：US18105970
申请日：2023-02-06
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L25/00 , H01L21/56 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/065
CPC分类号： H01L25/0655 , H01L21/561 , H01L21/563 , H01L23/3128 , H01L23/49822 , H01L23/49833 , H01L23/5385
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11742327B2
公开(公告)日：2023-08-29
申请号：US17325872
申请日：2021-05-20
发明人： Shaun Bowers , Ramakanth Alapati
IPC分类号： H01L25/065 , H01L25/00
CPC分类号： H01L25/0657 , H01L25/50 , H01L2225/06524 , H01L2225/06562 , H01L2225/06586
摘要： A packaged semiconductor device includes a substrate with first and second opposing major surfaces. A stacked semiconductor device structure is connected to the first major surface and includes a plurality of semiconductor die having terminals. Conductive interconnect structures electrically connect the terminals of the semiconductor dies together. The semiconductor dies are stacked together so that the terminals are exposed, and the stacked semiconductor device structure comprises a stepped profile. The conductive interconnect structures comprise a conformal layer that substantially follows the stepped profile.
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公开(公告)号：US20230070922A1
公开(公告)日：2023-03-09
申请号：US17982713
申请日：2022-11-08
发明人： Gyu Wan Han , Won Bae Bang , Ju Hyung Lee , Min Hwa Chang , Dong Joo Park , Jin Young Khim , Jae Yun Kim , Se Hwan Hong , Seung Jae Yu , Shaun Bowers , Gi Tae Lim , Byoung Woo Cho , Myung Jea Choi , Seul Bee Lee , Sang Goo Kang , Kyung Rok Park
IPC分类号： H01L23/13 , H01L21/56 , H01L23/00 , H01L25/065 , H01L23/31 , H01L25/18 , H01L23/498
摘要： In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.
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公开(公告)号：US11574890B2
公开(公告)日：2023-02-07
申请号：US16918074
申请日：2020-07-01
发明人： Yi Seul Han , Tae Yong Lee , Ji Yeon Ryu , Won Chul Do , Jin Young Khim , Shaun Bowers , Ron Huemoeller
IPC分类号： H01L23/48 , H01L25/065 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/31
摘要： In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
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公开(公告)号：US11495505B2
公开(公告)日：2022-11-08
申请号：US17018434
申请日：2020-09-11
发明人： Gyu Wan Han , Won Bae Bang , Ju Hyung Lee , Min Hwa Chang , Dong Joo Park , Jin Young Khim , Jae Yun Kim , Se Hwan Hong , Seung Jae Yu , Shaun Bowers , Gi Tae Lim , Byoung Woo Cho , Myung Jea Choi , Seul Bee Lee , Sang Goo Kang , Kyung Rok Park
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/13 , H01L21/56 , H01L23/00 , H01L25/065 , H01L23/31 , H01L25/18 , H01L23/498
摘要： In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.
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公开(公告)号：US11482500B2
公开(公告)日：2022-10-25
申请号：US17077007
申请日：2020-10-22
发明人： Shaun Bowers
摘要： A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.
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公开(公告)号：US11784101B2
公开(公告)日：2023-10-10
申请号：US16806927
申请日：2020-03-02
发明人： Shaun Bowers , Bora Baloglu
IPC分类号： H01L23/053 , H01L23/10 , H01L23/498 , H01L21/48 , H01L21/52
CPC分类号： H01L23/053 , H01L21/486 , H01L21/4817 , H01L21/4853 , H01L21/52 , H01L23/10 , H01L23/49816 , H01L23/49827
摘要： In one example, a semiconductor device comprises a substrate comprising a conductive structure, an electronic component over a top side of the substrate and electrically coupled with the conductive structure, a lid structure over the substrate and over the electronic component, and a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure. Other examples and related methods are also disclosed herein.
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公开(公告)号：US20220115301A1
公开(公告)日：2022-04-14
申请号：US17398600
申请日：2021-08-10
发明人： Shaun Bowers , Yoshio Matsuda , Hyung Il Jeon , Byong Jin Kim , Gi Jeong Kim , Jae Min Bae , Seung Woo Lee , Yong Ho Son , Miki Nakashima , Kazuaki Nagasawa , Shingo Nakamura , Sophie Olson , Jin Young Khim
IPC分类号： H01L23/495 , H01L23/00 , H01L23/31 , H01L21/56
摘要： In one example, an electronic device comprises a first substrate comprising a base, an electronic component over the first substrate and comprising a top side and a bottom side, a first terminal and a second terminal on the top side, and a third terminal on the bottom side, wherein the third terminal is coupled with the first substrate. The electronic device further comprises a second substrate over the electronic component, and an encapsulant over the first substrate, contacting a lateral side of the electronic component and contacting the second substrate. A first lead is coupled with and extends over the base of the first substrate, a second lead of the second substrate is coupled to the first terminal of the electronic component, and the first lead and the second lead are exposed from a top side of the encapsulant. Other examples and related methods are also disclosed herein.
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