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    METHOD FOR ANALYZING ELECTROLYTIC COPPER PLATING SOLUTION
    2.
    发明申请
    METHOD FOR ANALYZING ELECTROLYTIC COPPER PLATING SOLUTION 有权
    分析电解铜溶液的方法

    公开(公告)号：US20110025294A1

    公开(公告)日：2011-02-03

    申请号：US12903090

    申请日：2010-10-12

    申请人： Toshikazu Okubo ,  Katsuyoshi Naoi ,  Yuka Yamada

    发明人： Toshikazu Okubo ,  Katsuyoshi Naoi ,  Yuka Yamada

    IPC分类号： G01N27/00

    CPC分类号： C25D21/12 ,  G01N27/42

    摘要： Effective fillability and the uniformity electrodeposition of a copper electroplating solution is judged by determining the time-dependent potential change thereof at a cathode current density of 0.1-20 A/dm2. The potential change is determined at a working electrode rotation of 100-7500 rpm, and the fillability with the solution is judged from the curve profile. In an embodiment of the present invention, the fillability is judged by obtaining the potential change speed in the initial stage of electrolysis and the potential convergent point from the time-dependent potential change curve for a predetermined period of time after the start of the electrolysis.

    摘要翻译： 通过在0.1-20A / dm 2的阴极电流密度下确定其时间依赖性电位变化来判断铜电镀溶液的有效填充性和均匀性电沉积。 在100-7500rpm的工作电极旋转下确定电位变化，并根据曲线轮廓判断溶液的填充性。 在本发明的一个实施例中，通过在电解开始之后的预定时间段内从时间依赖电位变化曲线获得电解初始阶段的电位变化速度和电位收敛点来判断可填充性。

    Semiconductor electrode, production process thereof and photovoltaic cell using semiconductor electrode
    4.
    发明授权
    Semiconductor electrode, production process thereof and photovoltaic cell using semiconductor electrode 有权
    半导体电极，其制造方法和使用半导体电极的光伏电池

    公开(公告)号：US07476607B2

    公开(公告)日：2009-01-13

    申请号：US11448917

    申请日：2006-06-08

    申请人： Yuka Yamada ,  Nobuyasu Suzuki ,  Yasunori Morinaga ,  Hidehiro Sasaki

    发明人： Yuka Yamada ,  Nobuyasu Suzuki ,  Yasunori Morinaga ,  Hidehiro Sasaki

    IPC分类号： H01L21/44

    CPC分类号： B01J35/023 ,  B01J35/004 ,  H01G9/2027 ,  H01M14/005 ,  Y02E10/542 ,  Y02P70/521

    摘要： An object of the present invention is to provide a photovoltaic cell that demonstrates a superior photoelectric conversion function. The present invention relates to a photovoltaic cell comprising a semiconductor electrode, an electrolyte and a counter electrode, wherein (1) the semiconductor electrode contains an oxide semiconductor layer having photocatalytic activity, (2) the oxide semiconductor layer contains secondary particles in which primary particles comprising a metal oxide are aggregated, (3) the average particle diameter of the primary particles is from 1 nm to 50 nm, and the average particle diameter of the secondary particles is from 100 nm to 10 μm, and (4) the photovoltaic cell generates electromotive force by radiating light of a wavelength substantially equal to the average particle diameter of the secondary particles onto the semiconductor electrode.

    摘要翻译： 本发明的目的是提供一种表现出优异的光电转换功能的光伏电池。 本发明涉及一种包括半导体电极，电解质和对电极的光伏电池，其中（1）半导体电极含有具有光催化活性的氧化物半导体层，（2）氧化物半导体层含有二次粒子， （3）一次粒子的平均粒径为1nm〜50nm，二次粒子的平均粒径为100nm〜10μm，（4）光伏电池 通过将基本上等于二次粒子的平均粒径的波长的光照射到半导体电极上来产生电动势。

    Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method
    5.
    发明授权
    Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method 有权
    语音提供系统，服务器，客户机，信息提供管理服务器和语音提供方法

    公开(公告)号：US07440899B2

    公开(公告)日：2008-10-21

    申请号：US10793863

    申请日：2004-03-08

    申请人： Nobuyuki Otsuka ,  Kiyoshi Morimoto ,  Yuka Yamada ,  Hiroshi Kutsumi ,  Nobuo Kitao

    发明人： Nobuyuki Otsuka ,  Kiyoshi Morimoto ,  Yuka Yamada ,  Hiroshi Kutsumi ,  Nobuo Kitao

    IPC分类号： G10L21/00

    CPC分类号： G06F3/16

    摘要： A server, which transmits phonetic-sound information to a plurality of client machines and reproduces the transmitted phonetic-sound information, includes a storage unit for storing a plurality of pieces of voiced phonetic-sound information whose contents are voices of a plurality of speakers in a conversation made up of the voices of the plurality of speakers. The server also includes a timing determining unit for determining reproduction timing of the plurality of pieces of voiced phonetic-sound information, and a transmitting unit for transmitting the voiced phonetic-sound information which is applicable to each client machine, so that its reproduction is executed in the reproduction timing determined by the timing determining unit.

    摘要翻译： 将语音信息发送到多个客户端机器并再现发送的语音信息的服务器包括：存储单元，用于存储多个语音的语音信息，其内容是多个扬声器的语音 由多个扬声器的声音组成的对话。 服务器还包括用于确定多条有声语音信息的再现定时的定时确定单元，以及用于发送适用于每个客户端机器的有声语音信息的发送单元，从而执行其再现 在由定时确定单元确定的再现定时中。

    Method for analyzing electrolytic copper plating solution, and analyzing device therefor and production method for semi-conductor product
    8.
    发明申请
    Method for analyzing electrolytic copper plating solution, and analyzing device therefor and production method for semi-conductor product 有权
    电解铜电镀液分析方法及其分析装置及半导体制品的制造方法

    公开(公告)号：US20060183257A1

    公开(公告)日：2006-08-17

    申请号：US10550153

    申请日：2004-03-23

    申请人： Toshikazu Okubo ,  Katsuyoshi Naoi ,  Yuka Yamada

    发明人： Toshikazu Okubo ,  Katsuyoshi Naoi ,  Yuka Yamada

    IPC分类号： H01L21/66 ,  H01L21/44

    CPC分类号： C25D21/12 ,  G01N27/42

    摘要： Effective fillability and the uniformity electrodeposition of a copper electroplating solution is judged by determining the time-dependent potential change thereof at a cathode current density of 0.1-20 A/dm2. The potential change is determined at a working electrode rotation of 100-7500 rpm, and the fillability with the solution is judged from the curve profile. The time-dependent potential change curve within a predetermined period of time after the start of electrolysis is approximated according to the Boltzmann's function, and the potential change speed dx and the potential convergent point A2 are obtained to judge the fillability with a plating solution.

    摘要翻译： 通过在0.1-20A / dm 2的阴极电流密度下确定其依赖于电位的变化来判断铜电镀溶液的有效填充性和均匀性电沉积。 在100-7500rpm的工作电极旋转下确定电位变化，并根据曲线轮廓判断溶液的填充性。 在电解开始之后的预定时间段内的时间依赖电位变化曲线根据玻尔兹曼函数近似，并且获得电位变化速度dx和电位收敛点A <2>，以判断 电镀溶液的填充性。

    Optoelectronic material, device using the same and method for manufacturing optoelectronic material
    10.
    发明授权
    Optoelectronic material, device using the same and method for manufacturing optoelectronic material 有权
    光电子材料，使用相同的器件和制造光电子材料的方法

    公开(公告)号：US06838743B2

    公开(公告)日：2005-01-04

    申请号：US10372257

    申请日：2003-02-25

    申请人： Yuka Yamada ,  Takehito Yoshida ,  Shigeru Takeyama ,  Yuji Matsuda ,  Katsuhiko Mutoh

    发明人： Yuka Yamada ,  Takehito Yoshida ,  Shigeru Takeyama ,  Yuji Matsuda ,  Katsuhiko Mutoh

    IPC分类号： H01L21/203 ,  B01D53/78 ,  H01L31/18 ,  H01L33/00 ,  H01L33/18 ,  H01L33/26 ,  H01L31/06 ,  H01L31/0352

    CPC分类号： H01L33/26 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/25 ,  Y10T428/258

    摘要： This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.

    摘要翻译： 本发明涉及包含具有可控电特性的均匀介质的光电子材料; 和分散在介质中并且具有100nm以下的平均粒径的半导体超细颗粒，以及使用其的涂布装置。 本发明还涉及一种通过将激光束照射到放置在低压稀有气体环境中的反应室中的半导体材料的第一靶上，以及具有可控电的介质材料的第二靶材来制造光电子材料的方法 特性，放置在反应室中，冷凝/生长从放置在反应室中的基板上平均粒度为100nm以下的超微粒子作为被收集的第一靶材烧蚀的半导体材料，并冷凝/生长介质 从放置在反应室内的基板上收集的第二靶材烧蚀掉的材料，由此形成分散在基板上的介质中的具有半导体超微粒子的超微粒子分散层。