Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting
    1.
    发明授权
    Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting 有权
    用于制造具有可重复使用的用于硅熔化的双坩埚的单晶硅锭的装置

    公开(公告)号:US09040010B2

    公开(公告)日:2015-05-26

    申请号:US13267490

    申请日:2011-10-06

    摘要: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

    摘要翻译: 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置,其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚,其中加入原料硅,加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器,控制双坩埚旋转和升高的坩埚驱动单元, 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状,并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

    Method for fabricating 3D nonvolatile memory device with vertical channel hole
    2.
    发明授权
    Method for fabricating 3D nonvolatile memory device with vertical channel hole 有权
    用于制造具有垂直通道孔的3D非易失性存储器件的方法

    公开(公告)号:US08921182B2

    公开(公告)日:2014-12-30

    申请号:US13604436

    申请日:2012-09-05

    IPC分类号: H01L21/336

    摘要: A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.

    摘要翻译: 一种制造非易失性存储器件的方法包括形成具有多个层间电介质层和多个牺牲层的叠层结构,其中层间绝缘层和牺牲层交替堆叠在衬底上,形成暴露衬底的一部分的第一孔 通过选择性地蚀刻层叠结构,在第一孔中形成第一绝缘层,通过选择性地蚀刻第一绝缘层形成露出基板的一部分的第二孔,并在第二孔中形成沟道层。

    Nonvolatile memory device, method for operating the same, and method for fabricating the same
    3.
    发明授权
    Nonvolatile memory device, method for operating the same, and method for fabricating the same 有权
    非易失性存储器件,其操作方法及其制造方法

    公开(公告)号:US08687425B2

    公开(公告)日:2014-04-01

    申请号:US13610810

    申请日:2012-09-11

    摘要: A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.

    摘要翻译: 非易失性存储器件包括形成在衬底上并包括交替层叠有多个沟道层的多个层间电介质层的多个沟道结构; 第一和第二垂直栅极,沿着与沟道结构交叉的一个方向交替地布置在沟道结构之间,并且与介于其间的存储层相邻; 以及设置在所述通道结构之上或之下的一对第一和第二字线,并且沿着所述一个方向延伸以与所述第一和第二垂直门重叠。 第一字线与第一垂直门连接,第二字线与第二垂直门连接。

    THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF MANUFACTURING THE SAME 审中-公开
    三维非易失性存储器件,存储器系统及其制造方法

    公开(公告)号:US20130153979A1

    公开(公告)日:2013-06-20

    申请号:US13605982

    申请日:2012-09-06

    IPC分类号: H01L29/78 H01L21/336

    摘要: A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.

    摘要翻译: 三维(3-D)非易失性存储器件包括通道结构,每个通道结构包括在衬底上堆叠并在第一方向上延伸的沟道层,其中沟道层分别包括阱区,位于彼此并且彼此间隔开的垂直栅极 在通道结构之间以及在通道层的阱区域上接触并沿与通道结构交叉的第二方向延伸的阱拾取线。

    Method of Preparing Silica Aerogel Granules
    5.
    发明申请
    Method of Preparing Silica Aerogel Granules 有权
    二氧化硅气凝胶颗粒的制备方法

    公开(公告)号:US20130106008A1

    公开(公告)日:2013-05-02

    申请号:US13808673

    申请日:2011-09-28

    IPC分类号: C07F7/12 C09K3/00

    摘要: A method of preparing transparent or nontransparent silica aerogel granules. The method includes forming a granular wet gel by spraying a silica sol into alcohol, the silica sol being prepared by mixing a water glass solution or an opacifier-containing water glass solution with an inorganic acid solution, forming a granular alcohol gel through gelation aging and solvent substitution of the granular wet gel in alcohol, hydrophobically modifying the surface of the granular alcohol gel using an organic silane compound, and drying the surface modified gel at ambient pressure or in a vacuum. The method may prepare silica aerogel granules in a short period of time through heat treatment at a relatively low temperature and at ambient pressure or in a vacuum, thereby ensuring excellent economic feasibility, continuity and reliability, suited for mass production.

    摘要翻译: 制备透明或不透明的二氧化硅气凝胶颗粒的方法。 该方法包括通过将二氧化硅溶胶喷射到醇中形成粒状湿凝胶,该硅溶胶是通过将水玻璃溶液或含有遮光剂的水玻璃溶液与无机酸溶液混合制备的,通过凝胶化老化形成粒状醇凝胶, 在醇中的颗粒状湿凝胶的溶剂置换,使用有机硅烷化合物疏水改性粒状醇凝胶的表面,并在环境压力或真空下干燥表面改性凝胶。 该方法可以在相对较低的温度和环境压力或真空下通过热处理在短时间内制备二氧化硅气凝胶颗粒,从而确保了适合于批量生产的优异的经济可行性,连续性和可靠性。

    APPARATUS FOR MANUFACTURING SINGLE CRYSTAL SILICON INGOT HAVING REUSABLE DUAL CRUCIBLE FOR SILICON MELTING
    6.
    发明申请
    APPARATUS FOR MANUFACTURING SINGLE CRYSTAL SILICON INGOT HAVING REUSABLE DUAL CRUCIBLE FOR SILICON MELTING 有权
    用于制造具有可回收双重可溶性硅熔融的单晶硅的装置

    公开(公告)号:US20120288432A1

    公开(公告)日:2012-11-15

    申请号:US13267490

    申请日:2011-10-06

    摘要: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

    摘要翻译: 本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置,其可由于双坩埚结构而被再利用。 该装置包括用于硅熔化的双坩埚,其中加入原料硅,加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器,控制双坩埚旋转和升高的坩埚驱动单元, 设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。 双坩埚具有在其上侧开口的容器形状,并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚 坩。

    METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING
    7.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING 审中-公开
    使用惰性气体吹制制造具有卓越表面质量的硅基材的方法和装置

    公开(公告)号:US20110303290A1

    公开(公告)日:2011-12-15

    申请号:US13158490

    申请日:2011-06-13

    摘要: The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.

    摘要翻译: 本公开提供了一种用于在连续铸造期间使用惰性气体吹制制造硅衬底以提供优异的生产率和表面质量的方法和装置。 该装置包括:原料硅供给装置,通过原料硅供给装置配置的硅熔融单元,熔融原料硅以形成熔融硅;熔融硅储存单元,储存从硅熔融单元供给的熔融硅;以及 点击熔融硅以提供具有恒定厚度的硅熔体,转移单元,转移从熔融硅储存单元抽出的硅熔体;以及冷却单元,冷却由转印单元转移的硅熔体。 这里,冷却单元通过以0.1〜2.5Nm 3 / h的速度吹入惰性气体来冷却硅熔体。

    GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE
    8.
    发明申请
    GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE 有权
    用于硅电磁感应加热的石墨坩埚和使用石墨坩埚进行硅熔炼和精炼的设备

    公开(公告)号:US20100095883A1

    公开(公告)日:2010-04-22

    申请号:US12568436

    申请日:2009-09-28

    IPC分类号: C30B11/00

    摘要: Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

    摘要翻译: 本文公开了一种用于基于电磁感应的硅熔化的石墨坩埚和使用该方法的硅熔化/精炼装置,其通过间接熔化和直接熔融的组合进行熔融操作。 坩埚由石墨材料形成,并且包括具有开放的上部的圆柱体,硅原料通过该上部装载到坩埚中,以及由感应线圈包围的外壁,其中多个狭缝通过 外壁和坩埚的内壁,使得由在感应线圈中流动的电流产生的电磁力作用于坩埚的内部中心,以防止硅熔体与坩埚的内壁接触。

    Touch panel with polarizer, flat panel display with the touch panel and manufacturing method thereof
    10.
    发明申请
    Touch panel with polarizer, flat panel display with the touch panel and manufacturing method thereof 审中-公开
    具有偏光片的触摸面板,带触摸面板的平板显示器及其制造方法

    公开(公告)号:US20050030294A1

    公开(公告)日:2005-02-10

    申请号:US10801154

    申请日:2004-03-15

    摘要: An improved touch panel with polarizer, a flat panel display with touch panel, and a laminating method. The improvement having an adhesive layer, provided on an upper base of the polarizer in order to manufacture a laminate structure; or dot spacers formed between transparent conductive films are formed so that substrates can be laminated to each other. The touch panel with polarizer includes: dot spacers between transparent conductive films so that substrates can be laminated to each other; the polarizer bonded to a lower sheet has an adhesive layer bonded to the touch panel causing the polarizer to be integrated with the panel, and another adhesive layer causing the polarizer to be bonded to the liquid crystal display; and the other polarizer is bonded to the liquid crystal display. A touch panel is bonded together, and a polarizer is bonded to the panel, and the liquid crystal display is bonded to an adhesive layer on the polarizer. Lightness and thinness of the touch panel with the polarizer, and the flat panel display with the touch panel is obtained. Also, loss of light transmissivity is reduced, and defects resulting from deformation of the touch panel is removed. High yield and reliability can be obtained in the laminating method.

    摘要翻译: 具有偏振片的改进的触摸面板,具有触摸面板的平板显示器和层压方法。 该改进具有粘合剂层,设置在偏振片的上基底上以制造层压结构; 或者形成在透明导电膜之间形成的点间隔物,使得基板可以彼此层叠。 具有偏振器的触摸面板包括:透明导电膜之间的点间隔,使得基板可以彼此层叠; 结合到下片的偏振片具有粘合到触摸面板的粘合剂层,使得偏振片与面板一体化,另一粘合剂层使偏振片粘合到液晶显示器; 并且另一个偏振器结合到液晶显示器。 触摸面板接合在一起,并且偏振器结合到面板上,并且液晶显示器被结合到偏振器上的粘合剂层。 获得具有偏振器的触摸面板的亮度和薄度,以及具有触摸面板的平板显示器。 此外,光透射率的损失减小,并且消除了由触摸面板的变形导致的缺陷。 在层压方法中可以获得高产率和可靠性。