Invention Grant
US09040010B2 Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting
有权
用于制造具有可重复使用的用于硅熔化的双坩埚的单晶硅锭的装置
- Patent Title: Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting
- Patent Title (中): 用于制造具有可重复使用的用于硅熔化的双坩埚的单晶硅锭的装置
-
Application No.: US13267490Application Date: 2011-10-06
-
Publication No.: US09040010B2Publication Date: 2015-05-26
- Inventor: Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
- Applicant: Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
- Applicant Address: KR Yuseong-Gu, Daejeon
- Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee Address: KR Yuseong-Gu, Daejeon
- Agency: Lowe Hauptman & Ham, LLP
- Priority: KR10-2011-0044753 20110512
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C30B15/18 ; C30B15/30 ; C30B15/10 ; C30B29/06 ; C30B35/00

Abstract:
The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
Public/Granted literature
Information query