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    Semiconductor device and method of manufacturing same
    1.
    发明授权
    Semiconductor device and method of manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US08338247B2

    公开(公告)日：2012-12-25

    申请号：US12720174

    申请日：2010-03-09

    Applicant: Tadashi Yamaguchi ,  Toshiaki Tsutsumi ,  Satoshi Ogino ,  Kazumasa Yonekura ,  Kenji Kawai ,  Yoshihiro Miyagawa ,  Tomonori Okudaira ,  Keiichiro Kashihara ,  Kotaro Kihara

    Inventor： Tadashi Yamaguchi ,  Toshiaki Tsutsumi ,  Satoshi Ogino ,  Kazumasa Yonekura ,  Kenji Kawai ,  Yoshihiro Miyagawa ,  Tomonori Okudaira ,  Keiichiro Kashihara ,  Kotaro Kihara

    IPC: H01L27/092 ,  H01L21/8238

    CPC classification number: H01L21/823835 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

    Abstract: To improve the performance of semiconductor devices. Over an n+-type semiconductor region for source/drain of an n-channel type MISFET and a first gate electrode, and over a p+-type semiconductor region for source/drain of a p-channel type MISFET and a second gate electrode, which are formed over a semiconductor substrate, a metal silicide layer including nickel platinum silicide is formed by a salicide process. After that, a tensile stress film is formed over the whole face of the semiconductor substrate, and then the tensile stress film over the p-channel type MISFET is removed by dry-etching, and, after a compression stress film is formed over the whole face of the semiconductor substrate, the compression stress film over the n-channel type MISFET is removed by dry-etching. The Pt concentration in the metal silicide layer is highest at the surface, and becomes lower as the depth from the surface increases.

    Abstract translation: 提高半导体器件的性能。 在用于n沟道型MISFET和第一栅电极的源极/漏极的n +型半导体区域上，以及用于p沟道型MISFET和第二栅电极的源极/漏极的p +型半导体区域上，其中 形成在半导体衬底上，通过自对准硅化物工艺形成包括镍铂硅化物的金属硅化物层。 之后，在半导体基板的整个面上形成拉伸应力膜，然后通过干法蚀刻去除p沟道型MISFET上的拉伸应力膜，并且在整个压电应力膜形成之后 在半导体衬底的表面上，通过干蚀刻去除n沟道型MISFET上的压缩应力膜。 金属硅化物层中的Pt浓度在表面处最高，并且随着从表面的深度增加而变低。

    ELECTRONIC FLOW METER
    2.
    发明申请
    ELECTRONIC FLOW METER 有权
    电子流量计

    公开(公告)号：US20120304779A1

    公开(公告)日：2012-12-06

    申请号：US13482873

    申请日：2012-05-29

    Applicant: Yoshiharu ONO ,  Osamu KARINO ,  Yoshihiro SHIMIZU ,  Yoshihiro MIYAGAWA ,  Hiroyuki KAWAJIRI ,  Takehiro FURUKAWA

    Inventor： Yoshiharu ONO ,  Osamu KARINO ,  Yoshihiro SHIMIZU ,  Yoshihiro MIYAGAWA ,  Hiroyuki KAWAJIRI ,  Takehiro FURUKAWA

    IPC: G01F1/56

    CPC classification number: G01F1/075 ,  G01F15/068

    Abstract: An electronic flow meter includes a magnetic sensor, phase-A and phase-B drivers, a phase-A comparator, a phase-B comparator, a two-phase encoder, and a rotational speed timer. The two-phase encoder determines a normal/reverse direction where the impeller is rotated based on event signals sampled by the phase-A and the phase-B comparators, respectively, causing a counter to count up or to count down according to the normal/reverse direction as determined, thereby outputting an event count signal. The rotational speed timer calculates a rotational frequency of the impeller from the event count signal outputted by the two-phase encoder and sets frequencies of respective sampling signals of the phase-A and the phase-B comparators at a time when the rotational frequency of the impeller is measured next, and respective drive periods of the phase-A and the phase-B drivers in accordance with the rotational frequency of the impeller as calculated.

    Abstract translation: 电子流量计包括磁传感器，A相和B相驱动器，A相比较器，B相比较器，两相编码器和转速计时器。 两相编码器基于由相位A和相位B比较器采样的事件信号分别确定叶轮旋转的正/反方向，使得计数器根据正常/反相计数器向上计数或倒计数， 由此输出事件计数信号。 旋转速度计时器根据由两相编码器输出的事件计数信号计算叶轮的旋转频率，并设定相位A和相位-B比较器的各个采样信号的频率， 叶轮，根据计算出的叶轮的转速，相位-A和相位B驱动器的驱动周期相应地被测量。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100230761A1

    公开(公告)日：2010-09-16

    申请号：US12720174

    申请日：2010-03-09

    Applicant: Tadashi Yamaguchi ,  Toshiaki Tsutsumi ,  Satoshi Ogino ,  Kazumasa Yonekura ,  Kenji Kawai ,  Yoshihiro Miyagawa ,  Tomonori Okudaira ,  Keiichiro Kashihara ,  Kotaro Kihara

    Inventor： Tadashi Yamaguchi ,  Toshiaki Tsutsumi ,  Satoshi Ogino ,  Kazumasa Yonekura ,  Kenji Kawai ,  Yoshihiro Miyagawa ,  Tomonori Okudaira ,  Keiichiro Kashihara ,  Kotaro Kihara

    IPC: H01L27/092 ,  H01L21/8238

    CPC classification number: H01L21/823835 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

    Abstract: To improve the performance of semiconductor devices. Over an n+-type semiconductor region for source/drain of an n-channel type MISFET and a first gate electrode, and over a p+-type semiconductor region for source/drain of a p-channel type MISFET and a second gate electrode, which are formed over a semiconductor substrate, a metal silicide layer including nickel platinum silicide is formed by a salicide process. After that, a tensile stress film is formed over the whole face of the semiconductor substrate, and then the tensile stress film over the p-channel type MISFET is removed by dry-etching, and, after a compression stress film is formed over the whole face of the semiconductor substrate, the compression stress film over the n-channel type MISFET is removed by dry-etching. The Pt concentration in the metal silicide layer is highest at the surface, and becomes lower as the depth from the surface increases.

    Abstract translation: 提高半导体器件的性能。 在用于n沟道型MISFET和第一栅电极的源极/漏极的n +型半导体区域上，以及用于p沟道型MISFET和第二栅电极的源极/漏极的p +型半导体区域上，其中 形成在半导体衬底上，通过自对准硅化物工艺形成包括镍铂硅化物的金属硅化物层。 之后，在半导体基板的整个面上形成拉伸应力膜，然后通过干法蚀刻去除p沟道型MISFET上的拉伸应力膜，并且在整个压电应力膜形成之后 在半导体衬底的表面上，通过干蚀刻去除n沟道型MISFET上的压缩应力膜。 金属硅化物层中的Pt浓度在表面处最高，并且随着从表面的深度增加而变低。

    Electronic flow meter
    4.
    发明授权
    Electronic flow meter 有权
    电子流量计

    公开(公告)号：US08671773B2

    公开(公告)日：2014-03-18

    申请号：US13482873

    申请日：2012-05-29

    Applicant: Yoshiharu Ono ,  Osamu Karino ,  Yoshihiro Shimizu ,  Yoshihiro Miyagawa ,  Hiroyuki Kawajiri ,  Takehiro Furukawa

    Inventor： Yoshiharu Ono ,  Osamu Karino ,  Yoshihiro Shimizu ,  Yoshihiro Miyagawa ,  Hiroyuki Kawajiri ,  Takehiro Furukawa

    IPC: G01F1/56

    CPC classification number: G01F1/075 ,  G01F15/068

    Abstract: An electronic flow meter includes a magnetic sensor, phase-A and phase-B drivers, a phase-A comparator, a phase-B comparator, a two-phase encoder, and a rotational speed timer. The two-phase encoder determines a normal/reverse direction where the impeller is rotated based on event signals sampled by the phase-A and the phase-B comparators, respectively, causing a counter to count up or to count down according to the normal/reverse direction as determined, thereby outputting an event count signal. The rotational speed timer calculates a rotational frequency of the impeller from the event count signal outputted by the two-phase encoder and sets frequencies of respective sampling signals of the phase-A and the phase-B comparators at a time when the rotational frequency of the impeller is measured next, and respective drive periods of the phase-A and the phase-B drivers in accordance with the rotational frequency of the impeller as calculated.

    Abstract translation: 电子流量计包括磁传感器，A相和B相驱动器，A相比较器，B相比较器，两相编码器和转速计时器。 两相编码器基于由相位A和相位B比较器采样的事件信号分别确定叶轮旋转的正/反方向，使得计数器根据正常/反相计数器向上计数或倒计数， 由此输出事件计数信号。 旋转速度计时器根据由两相编码器输出的事件计数信号计算叶轮的旋转频率，并设定相位A和相位-B比较器的各个采样信号的频率， 叶轮，根据计算出的叶轮的转速，相位-A和相位B驱动器的驱动周期相应地被测量。

    Oxide film filled structure, oxide film filling method, semiconductor device and manufacturing method thereof
    5.
    发明申请
    Oxide film filled structure, oxide film filling method, semiconductor device and manufacturing method thereof 审中-公开
    氧化膜填充结构，氧化膜填充方法，半导体器件及其制造方法

    公开(公告)号：US20070049046A1

    公开(公告)日：2007-03-01

    申请号：US11502402

    申请日：2006-08-11

    Applicant: Mahito Sawada ,  Koyu Asai ,  Yoshihiro Miyagawa ,  Tatsunori Murata

    Inventor： Mahito Sawada ,  Koyu Asai ,  Yoshihiro Miyagawa ,  Tatsunori Murata

    IPC: H01L21/31

    CPC classification number: H01L21/31612 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/31662

    Abstract: The present invention aims at offering the filled structure of an oxide film etc. which can form an insulating film (oxide film) without void in a predetermined depressed portion by an economical and practical method and without increasing RF bias. According to the first invention, the oxide film filled structure is provided with the foundation (silicon substrate) having a depressed portion (trench), and the oxide film (silicon oxide film) formed in the depressed portion concerned. Here, the oxide film concerned includes the silicon oxide film region of silicon-richness in part at least.

    Abstract translation: 本发明旨在提供一种氧化膜等的填充结构，其可以通过经济实用的方法在不增加RF偏压的情况下在预定凹陷部分中形成无空隙的绝缘膜（氧化膜）。 根据第一发明，氧化膜填充结构设置有具有凹陷部（沟槽）的基底（硅衬底）和形成在所述凹陷部中的氧化膜（氧化硅膜）。 这里，氧化膜至少部分地包括富含硅的氧化硅膜区域。

    White mushroom
    6.
    发明授权
    White mushroom 失效
    白蘑菇

    公开(公告)号：US5349120A

    公开(公告)日：1994-09-20

    申请号：US29918

    申请日：1993-03-11

    Applicant: Noriyasu Kubota ,  Yoshihiro Miyagawa ,  Yukita Kawano

    Inventor： Noriyasu Kubota ,  Yoshihiro Miyagawa ,  Yukita Kawano

    IPC: A01G1/04 ,  A01H15/00 ,  C12N1/14

    CPC classification number: A01H15/00

    Abstract: A method for cultivation of Lyophyllum ulmarium to form a fruiting body. The Lyophyllum ulmarium is a strain capable of forming a white fruiting body with or without indistinct darker spots around the center thereof. Also provided is a strain of Lyophyllum ulmarium capable of forming such a white fruiting body.

    Abstract translation: 一种培养叶绿素微粒以形成子实体的方法。 叶绿素藻是一种能够形成具有或不具有围绕其中心的不明显的较暗斑点的白色子实体的菌株。 还提供了能够形成这种白色子实体的Lyophyllum ulmarium菌株。

    Method of manufacturing semiconductor device
    8.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20060264017A1

    公开(公告)日：2006-11-23

    申请号：US11495663

    申请日：2006-07-31

    Applicant: Yoshihiro Miyagawa

    Inventor： Yoshihiro Miyagawa

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76832 ,  H01L21/76837

    Abstract: First, an first insulating film is formed along surfaces of a plurality of combinations of an gate electrode and an gate insulating films, and a semiconductor substrate, respectively. Then, on the first insulating film, an second insulating film different from the first insulating film is formed. The steps of forming the first insulating film and forming the second insulating film are alternately repeated until a concave formed by the surface of an later insulating film, which is a film formed later out of the first insulating film and the second insulating film, is positioned above the upper surface of the gate electrode. Thereafter, a third insulating film is formed on the later insulating film. Thus, a semiconductor device with high reliability can be obtained by improving a state of the insulating film formed between the gate electrodes.

    Abstract translation: 首先，分别在栅极电极和栅极绝缘膜以及半导体衬底的多个组合的表面上形成第一绝缘膜。 然后，在第一绝缘膜上形成与第一绝缘膜不同的第二绝缘膜。 交替地重复形成第一绝缘膜并形成第二绝缘膜的步骤，直到由稍后从第一绝缘膜和第二绝缘膜形成的膜的较晚绝缘膜的表面形成的凹部被定位 在栅电极的上表面之上。 此后，在后面的绝缘膜上形成第三绝缘膜。 因此，通过改善形成在栅电极之间的绝缘膜的状态，可以获得高可靠性的半导体器件。

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