Hybrid electro-optical circuit board and method for fabricating the same
    4.
    发明授权
    Hybrid electro-optical circuit board and method for fabricating the same 有权
    混合电光电路板及其制造方法

    公开(公告)号:US07577321B2

    公开(公告)日:2009-08-18

    申请号:US11790547

    申请日:2007-04-26

    IPC分类号: G02B6/12

    摘要: A hybrid electro-optical circuit board including a plate, a light guiding hole and a light-guide device. The light guiding hole is formed in the plate to be connected to an upper surface and a lower surface of the plate. The light-guide device is formed on the lower surface and covers and contacts the light guiding hole. An optical signal is transmitted between the light-guide device and the upper surface of the plate via the light guiding hole. A metal layer is further formed on an inner wall of the light guiding hole, to reduce the roughness of the inner wall and reflects the optical signal by the reflection characteristics of metal. Further, the light guiding hole is filled with a transparent substance to transmit the optical signal and to stop foreign material from entering the light guiding hole.

    摘要翻译: 一种混合电光电路板,包括板,导光孔和导光装置。 导光孔形成在板中以连接到板的上表面和下表面。 导光装置形成在下表面上并覆盖并接触导光孔。 光信号经由导光孔在导光装置与板的上表面之间传递。 金属层进一步形成在导光孔的内壁上,以减小内壁的粗糙度,并通过金属的反射特性反射光信号。 此外,导光孔填充有透明物质以透射光信号并阻止异物进入导光孔。

    Method and structure for prevention leakage of substrate strip
    6.
    发明申请
    Method and structure for prevention leakage of substrate strip 有权
    衬底条防止泄漏的方法和结构

    公开(公告)号:US20050051881A1

    公开(公告)日:2005-03-10

    申请号:US10933349

    申请日:2004-09-03

    摘要: The present invention provides a structure and a method for prevention leakage of a substrate strip. The substrate strip includes an edge portion and a plurality of units. A patterned metal layer on a surface of the substrate strip includes at least one plating bus extended to the edge portion, a plurality of plating lines at the units, a plurality of contact pads at the units and a plurality of fiducial marks at the edge portion. The plating bus has an extended trail having one end exposed out of the sidewall of the substrate strip. The fiducial marks and the contact pads are exposed out of a plurality of first openings of a solder mask. The solder mask also has a second opening at the edge portion exposing a portion of the plating bus to define a breaking hole. After forming a surface layer on the fiducial marks and the contact pads, the exposed portion of the plating bus is void of the surface layer. By removing the exposed portion of the plating bus, the breaking hole is formed to electrically isolate the extended trail from the contact pads in order to prevent a chip on the substrate strip from being damaged by ESD (Electrostatic Discharge) during packaging processes.

    摘要翻译: 本发明提供了一种用于防止衬底条的泄漏的结构和方法。 衬底条包括边缘部分和多个单元。 衬底条表面上的图案化金属层包括延伸到边缘部分的至少一个电镀母线,在该单元处的多条电镀线,在该单元处的多个接触焊盘和在边缘部分处的多个基准标记 。 电镀母线具有一个伸出的线,其一端暴露在衬底带的侧壁外。 基准标记和接触垫从焊料掩模的多个第一开口露出。 焊接掩模还在边缘部分处具有暴露电镀总线的一部分以限定断裂孔的第二开口。 在基准标记和接触焊盘上形成表面层之后,电镀总线的露出部分没有表面层。 通过去除电镀总线的暴露部分,形成断开孔以将延伸的迹线与接触焊盘电隔离,以防止在封装过程中ESD(静电放电)在衬底条上的芯片被损坏。

    Structure extendible tip shoring bar
    7.
    发明授权
    Structure extendible tip shoring bar 失效
    结构可扩展尖端支柱

    公开(公告)号:US06698984B1

    公开(公告)日:2004-03-02

    申请号:US10294744

    申请日:2002-11-15

    申请人: Ying-Chih Chen

    发明人: Ying-Chih Chen

    IPC分类号: B60P715

    CPC分类号: B60P7/15

    摘要: An improved structure extendible tip shoring bar comprising an outer rod connected to a base enables the extension and retraction inserted inside the outer rod and base. The base having a levering handle, a safety catch, and an L-shaped linkage, wherein an anterior pawl and a posterior pawl disposed at the front extremity of the levering handle. The posterior pawl and the levering handle are rotatably coupled to the base, while the anterior and posterior pawls contact unidirectionally inclined teeth. Furthermore, a pin projects from the front aspect, with each subjected to tension from the two extremities of an encompassing arcuate spring, and the surface and spring side is against the safety catch and L-shaped linkage. Conversely, toggling the safety catch to actuate the L-shaped linkage and elevate the anterior and the posterior pawls allow the inner rod pushed inside the outer rod, achieving a more convenient operation.

    摘要翻译: 一种改进的结构可扩展尖端支杆,其包括连接到基座的外杆,能够将伸出和缩回插入外杆和底座内。 所述基座具有杠杆手柄,安全锁扣和L形连杆,其中前杠杆和后爪设置在杠杆手柄的前端。 后爪和杠杆手柄可旋转地联接到基座,而前爪和后爪接触单向倾斜的齿。 此外,销从前方突出,每个都受到包围的弓形弹簧的两个末端的张力,并且表面和弹簧侧抵靠安全锁扣和L形连杆。 相反,切换安全锁定器以致动L形连杆并提升前爪和后爪允许将内杆推到外杆内部,实现更方便的操作。

    Fast polarization-switchable semiconductor lasers
    8.
    发明授权
    Fast polarization-switchable semiconductor lasers 失效
    快速偏振切换半导体激光器

    公开(公告)号:US4612645A

    公开(公告)日:1986-09-16

    申请号:US683776

    申请日:1984-12-19

    摘要: The laser device of the present invention comprises: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer and a cap layer of semiconductor formed on the second cladding layer; the active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the normally operating TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode. The laser output of the laser device of the present invention can be switched between a pure TM mode and a pure TE mode with nanosecond response time by varying injection current levels of the device.

    摘要翻译: 本发明的激光装置包括:半导体基板; 形成在所述基板上的第一半导体包层; 形成在所述第一包层上的有源层半导体,从而在所述有源层与所述第一包层之间形成接合面; 形成在有源层上的第二半导体层和形成在第二覆层上的半导体帽层; 所述有源层具有平行于所述结面的晶格常数,其足够大于垂直于所述结面的晶格常数,从而相对于所述正常工作的TE模的光学增益增加所述TM模的光学增益,使得在 第一注入电流水平,激光器件以TM模式工作,并且在第二注入电流水平下操作,激光器件以TE模式工作。 本发明的激光装置的激光输出可以通过改变装置的注入电流水平,在纯TM模式和纯TE模式之间通过纳秒响应时间进行切换。