公开(公告)号：US6072203A

公开(公告)日：2000-06-06

申请号：US046791

申请日：1998-03-24

申请人： Chiharu Nozaki ,  Minoru Amano ,  Yukie Nishikawa ,  Masayuki Sugiura ,  Takao Noda ,  Aki Sasaki ,  Yasuo Ashizawa

发明人： Chiharu Nozaki ,  Minoru Amano ,  Yukie Nishikawa ,  Masayuki Sugiura ,  Takao Noda ,  Aki Sasaki ,  Yasuo Ashizawa

IPC分类号： H01L29/47 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0328

CPC分类号： H01L29/66856 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/2003

摘要： In an HEMT, a channel forming layer is arranged above a semi-insulating substrate via a buffer layer. A spacer layer is arranged on the channel forming layer and an electron supplying layer and a Schottky contact layer are sequentially arranged on the spacer layer. A diffusion preventing layer, for preventing a metal element of a gate electrode from diffusing into the channel forming layer, is arranged in the Schottky contact layer.

摘要翻译： 在HEMT中，沟道形成层经由缓冲层配置在半绝缘性基板的上方。 间隔层布置在沟道形成层上，电子供给层和肖特基接触层依次排列在间隔层上。 用于防止栅电极的金属元素扩散到沟道形成层中的扩散防止层布置在肖特基接触层中。

公开(公告)号：US5319223A

公开(公告)日：1994-06-07

申请号：US918057

申请日：1992-07-24

申请人： Shinobu Fujita ,  Takao Noda ,  Yasuo Ashizawa

发明人： Shinobu Fujita ,  Takao Noda ,  Yasuo Ashizawa

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L29/7783

摘要： A high electron mobility transistor (HEMT) comprises an InGaAs channel layer formed on a semi-insulating InP substrate via a buffer layer, and an n-type InA.iota.As electron supply layer formed on the channel layer via a spacer layer. On the electron supply layer, formed is an InGaA.iota.P Schottky contact layer, on which a Schottky gate electrode is formed. Source and drain electrodes are formed on the Schottky contact layer via an InGaAs ohmic contact layer, interposing the Schottky gate electrode therebetween. Thus, there is provided an InA.iota.As/InGaAs HEMT having a high gate breakdown voltage, and exhibiting a small variance of characteristics.

摘要翻译： 高电子迁移率晶体管（HEMT）包括通过缓冲层形成在半绝缘InP衬底上的InGaAs沟道层，以及通过间隔层形成在沟道层上的n型InAiAAsAs电子供给层。 在电子供给层上，形成有形成肖特基型栅电极的InGaA iota P肖特基接触层。 源极和漏极通过InGaAs欧姆接触层在肖特基接触层上形成，其间插入肖特基栅电极。 因此，提供了具有高栅极击穿电压并且表现出小的特性差异的InA iAAsAs / InGaAs HEMT。

公开(公告)号：US5168077A

公开(公告)日：1992-12-01

申请号：US501781

申请日：1990-03-29

申请人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

发明人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

IPC分类号： C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

公开(公告)号：US5898909A

公开(公告)日：1999-04-27

申请号：US720379

申请日：1996-09-27

申请人： Kunio Yoshihara ,  Kouhei Morizuka ,  Mitsuo Konno ,  Yasuo Ashizawa ,  Junko Akagi ,  Yasuhiro Kuriyama ,  Motoyasu Morinaga ,  Eiji Takagi ,  Yasushi Shizuki ,  Yuji Iseki ,  Takeshi Hanawa ,  Takeshi Miyagi

发明人： Kunio Yoshihara ,  Kouhei Morizuka ,  Mitsuo Konno ,  Yasuo Ashizawa ,  Junko Akagi ,  Yasuhiro Kuriyama ,  Motoyasu Morinaga ,  Eiji Takagi ,  Yasushi Shizuki ,  Yuji Iseki ,  Takeshi Hanawa ,  Takeshi Miyagi

IPC分类号： H01L25/00 ,  H01L23/552 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01P5/08 ,  H01P7/06 ,  H01P7/10 ,  H01Q23/00 ,  H03D7/00 ,  H04B1/38 ,  H04B1/44

CPC分类号： H03D7/00 ,  H01L23/552 ,  H01Q23/00 ,  H04B1/408 ,  H01L2223/6677 ,  H01L2224/05554 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15159 ,  H01L2924/15165 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/16195 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025

摘要： Disclosed is an ultra high frequency radio communication apparatus having: a receiver antenna; a transmitter antenna; an IC chip being electrically connected to the receiver antenna and the transmitter antenna; a substrate on which the receiver antenna, the transmitter antenna and the IC chip are mounted; an input terminal for inputting to the IC chip a base band input signal; an output terminal for outputting a base band output signal from the IC chip; and a control signal terminal for inputting a control signal for controlling the IC chip to the IC chip. The IC chip is placed in a shielding space such that the cut-off frequency of the shielding space is higher than the frequency of a carrier signal for radio communication.

摘要翻译： 公开了一种超高频无线通信装置，具有：接收天线; 发射天线; IC芯片电连接到接收机天线和发射机天线; 其上安装有接收天线，发射机天线和IC芯片的基板; 输入端子，用于向IC芯片输入基带输入信号; 输出端子，用于从IC芯片输出基带输出信号; 以及用于输入用于将IC芯片控制到IC芯片的控制信号的控制信号端子。 IC芯片被放置在屏蔽空间中，使得屏蔽空间的截止频率高于用于无线电通信的载波信号的频率。

公开(公告)号：US4664063A

公开(公告)日：1987-05-12

申请号：US870736

申请日：1986-06-04

申请人： Yasuo Ashizawa ,  Naoharu Sugiyama

发明人： Yasuo Ashizawa ,  Naoharu Sugiyama

IPC分类号： H01L21/203 ,  C30B23/06 ,  C23C16/00

CPC分类号： C30B23/063 ,  Y10S148/169

摘要： An apparatus for growing a compound semiconductor on a substrate by molecular beam epitaxy, includes a growth chamber, and Knudsen cells, disposed in the growth chamber, for generating molecular beams of source materials for the compound semiconductor independently. An ion gauge is disposed in the growth chamber, for measuring intensities of the molecular beams. A heater disposed in the growth chamber heats the substrate to a growth temperature of the compound semiconductor. A heating element heats the heater and the ion gauge to evaporate contamination materials including the source materials deposited on said substrate heating means and said measuring means after the growth of the compound semiconductor. An evacuater is provided to evacuate the growth chamber to a vacuum.

摘要翻译： 通过分子束外延在基板上生长化合物半导体的装置包括生长室和设置在生长室中的Knudsen电池，用于独立地产生化合物半导体的源材料的分子束。 离子计设置在生长室中，用于测量分子束的强度。 设置在生长室中的加热器将基板加热至化合物半导体的生长温度。 加热元件加热加热器和离子计，以在化合物半导体生长之后蒸发包括沉积在所述基板加热装置上的源材料和所述测量装置的污染物质。 提供一个抽气机将生长室抽真空。